block diagram for vhdl based barrel shifter
Abstract: multiplier accumulator unit with VHDL 256K DPRAM vhdl code for barrel shifter vhdl code for accumulator 16 bit single cycle mips vhdl barrel shifter code vhdl vhdl code for alu low power vhdl code for FFT vhdl code for speech processing
Text: S YSTEM L EVEL I NTEGRATION EMBEDDED T EAKDSPCORE SYSTEM Syste m Clo Flash /R Prog OM ram SR Work AM spac e Data In/Ou t ck So urce Mast e Clock r EEPR OM Data Emb Micro edded contr Core oller Cach Mem e ory Micro co Perip ntroller herals Data In/Ou t Teak
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18micron
block diagram for vhdl based barrel shifter
multiplier accumulator unit with VHDL
256K DPRAM
vhdl code for barrel shifter
vhdl code for accumulator
16 bit single cycle mips vhdl
barrel shifter code vhdl
vhdl code for alu low power
vhdl code for FFT
vhdl code for speech processing
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Untitled
Abstract: No abstract text available
Text: _diode2014-02.ec9 Page:18 Date: 2014/01/30 Thu 16:49:51 Si ngl eZenerDi ode PowerZenerDi ode •外観図 ST02120F1 OUTLI NE Package:1F 120V t :mm Uni 特 長 煙1 Wクラス 煙小型 SMD 煙車載用途も対応可能 U1 00 00 ① 品名略号 Type No.
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diode2014-02
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2N5969
Abstract: 2n6182 2N6031 i8080 2N6030 2N5876 2N5879 2N5880 2N5883 2N5954
Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST m hF:E SAT . VOLTA GES M 'c (A 4 M in . M ax. 6 VCE (V) 4 20 60 6 4 6 80 80 6 4 TO-3 60 60 5 2N 5884 TO-3 80 80 2N 5954 TO -66 90 2N 5955 TO -66 2N 5956 X m PNP DEVICE BR EAKDOY V OLTAGE S (V) 0.5 1 2 20
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2N5876
2N5879
2N5880
2N5883
2N5884
2N5954
2N5955
2N5956
2N5958
2N5960
2N5969
2n6182
2N6031
i8080
2N6030
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TSA170
Abstract: TSA47 tsa-43
Text: 14. SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS TSA6.8 THRU TSA200 400 WATT SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS SMB BR EAKD O W N VOLTAG E DEVICE TYPE TSA6.8 V BR VOLTS NOM. ; - IT mA W O RKING PEAK REV. VOLTAG E (VRWM) VOLTS MAX. REV. LE AK A G E
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TSA200
TSA10
TSA11
TSA12
TSA13
TSA15
TSA16
TSA18
TSA20
TSA22
TSA170
TSA47
tsa-43
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SD-5410-3
Abstract: SD-5410-1 Phototransistor with base emitter SD-2410-1 SD-2410-2 SD-2410-3 SD-3410-1 SD-3410-2 SD-3410-3 SD-3410-4
Text: WAVELENGTH, nanometers FIGURE 1. SPECTRAL RESPONSIVITY PHOTODARLINGTONS SILICON OPTICAL/ELECTRICAL CHARACTERISTICS (25°C) PARAM ETER LIG H T CURR EN T DARK C U RR EN T CO LLECTO R BR EAKDO W N E M IT T E R BR EA KD O W N L IG H T C U R R EN T RISE TIM E
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100jiA
100mA
SD-1410-lt
SD-1410-2t
SD-1410-3t
SD-1410-2L)
SD-5440
SD-5442
SD-1410
SD-2410
SD-5410-3
SD-5410-1
Phototransistor with base emitter
SD-2410-1
SD-2410-2
SD-2410-3
SD-3410-1
SD-3410-2
SD-3410-3
SD-3410-4
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tsc170
Abstract: EAKD TSC110 TSC51 TSC6 TSC180 TSC150 TSC18
Text: TSC6.8 THRU TSC200 1500 WATT SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS SMC BR EAKD O W N VOLTAG E DEVICE TYPE V BR VOLTS NOM. •" IT mA W O RKING PEAK REV. VOLTAG E (VRWM) VOLTS M AX. REV. LEA K A G E a t VRW M dr) m icroa m p s M AX. PEAK REV. SURGE CURRENT
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TSC200
TSC10
TSC11
TSC12
TSC13
TSC15
TSC16
TSC18
TSC27
TSC30
tsc170
EAKD
TSC110
TSC51
TSC6
TSC180
TSC150
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2n6324
Abstract: 2N6280 2N6281 2N6315 2N6316 2N6322 2N6323 2N6325 2N6326 2N6327
Text: ^ 1 1 * II BR EAKDON /VIM V OLTAGE S hrE SAI VOLTA kGES <M ax. * < n —' m NPN DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST <C A) 2N6280 TO-63 160 140 6 4 20 30 120 20 2 1.2 2 2N6281 TO-63 180 150 6 4 20 30 120 20 2 1.2 2 2N6315 TO-66 60 60
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2N6280
2N6281
2N6315
2N6316
2N6322
2N6323
2N6324
2N6325
2N6326
2N6327
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SB68
Abstract: TSB130 kd 502 tsb20 EAKD
Text: TSB6.8 THRU TSB180 600 WATT SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS SMB BR EAKD O W N VOLTAG E DEVICE TYPE V BR VOLTS NOM. - IT mA W O RKING PEAK REV. V O LTAG E (VRWM) VO LTS M AX. REV. LEA K AG E a t VR W M (Ir) m icroa m p s M A X . PEAK REV. SURGE
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TSB180
TSB10
TSB11
TSB12
TSB13
TSB15
TSB16
TSB18
TSB20
TSB22
SB68
TSB130
kd 502
EAKD
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2N5001
Abstract: TCA 875 MW-82 2N5149 2N4999
Text: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias
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2N4999.
2N5001,
2N5147,
2N5149
2N5001
TCA 875
MW-82
2N4999
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Untitled
Abstract: No abstract text available
Text: TIM7785-30SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 34.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 45 dBm at 7.7 GHz to 8.5 GHz ■ HIGH EFFICIENCY 77 add = 34 % at 7.7 GHz to 8.5 GHz ■ HIGH GAIN G-idB = 6.0dB at 7.7 GHz to 8.5 GHz
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TIM7785-30SL
TIM7785-30SL-----
-----------------------------T1M7785-30SL
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B1470
Abstract: FS10KM-5 FS10KM5 K775 MAX240 30hm marking mitsubishi st Z3J MITSUBISHI MOSFET FS
Text: MITSUBISHI Neh POWER MOSFET FS10KM-5 HIGH-SPEED SWITCHING USE FS10KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ±0.2 4» • V d s s . -2 5 0 V • rDS ON (MAX) . 0.52Q
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FS10KM-5
O-220FN
T0-220S,
MAX240Â
MAX60S
O-220,
O-220FN,
O-220C,
O-220S
B1470
FS10KM-5
FS10KM5
K775
MAX240
30hm
marking mitsubishi
st Z3J
MITSUBISHI MOSFET FS
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JE13070
Abstract: No abstract text available
Text: File Number 1841 MJE13070, MJE13071 HARRIS SErilCOND SECTOR 5bE Î • 4302271 ODMGÒTl 3Tb H H A S 7 ^ 3 5 -/? 5-A S w itchM aif II Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications Features:
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MJE13070,
MJE13071
O-220AB
92CS-39969
MJE13070
PW-300
MJE13071
JE13070
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diodo zener 5,6 v
Abstract: in5806 1N5815 Diode IN5815 T5 DIODO Diodo zener W IN5811 1N5663 1N5663A 1N5664
Text: Zener Type No. 1N5663 1N 5 6 6 3A 1N 5664 1N 5664A Zener Voltage at Izr @ mA Volts MICROSEMI Max. Zener Impedance @ lZr Ohms Zener Voltage Tolerance No Im pedance Specified ” ” ” No S u ffix = 10% S u ffix A = 5% No S u ffix = ± 1 0% " " Power Rating
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1N5663
DO-13
1N5663A
1N5664
1N5664A
IN5665
1N5665A
IN5666
1N5667
IN5668
diodo zener 5,6 v
in5806
1N5815 Diode
IN5815
T5 DIODO
Diodo zener W
IN5811
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n4944
Abstract: 1N4942 1N4947 1N4948
Text: I ttK ^ K - 1 1N4942 thru 1N4948 Microsemi Corp. MILITARY R EC T IFIER S FEATURES • • • • • • • M icrom iniature package. Voidless herm etically sealed glass package. Triple layer passivation. M etallurgically bonded. Fast recovery. PIV to 1,000 volts.
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1N4942
1N4948
MIL-S-19500/286.
Amp/MIL-STD-750
t-761
14jr970-8220
n4944
1N4947
1N4948
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EAKD
Abstract: BUW12A
Text: MOTOROLA SC XSTRS/R F 1HE D I I b3b?2S4 QüôM'iai 1 I MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA BUW 11,A BUW 12,A Designer's Data Sheet N P N Silicon Pow er Transistors Switchm ode Series These transistors are designed for high-voltage, high-speed, power switching in induc
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C0NTH01UNG
O-218AC
EAKD
BUW12A
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etf81
Abstract: etf81-05 transistor x1 pv 25 ETF81-050 M101
Text: E T F 8 1 - 5 15A Ì / N ? — =EÌs z l —JU —)V /< 7 - l : Outline Drawings 36 POWER TRANSISTOR MODULE 13 F e a tu re s • 7 'J - ii- f U > 9 ¥ 4 • h F E ^ S l' • K r tR -I» Including Free Wheeling Dtode 0 3.5 High DC Current Gain \ 22 1' Insulated Type
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ETF81-050
E82988
0KI63
etf81
etf81-05
transistor x1 pv 25
ETF81-050
M101
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TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317
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20nttc*
10N12*
TFK 404
T1S58
BCI83L
Germanium diode OA 182
TFK diode
transistors 2n 945
v744
akai amplifier
tis62
BCI09
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d45vh
Abstract: D45VH1
Text: File N um ber 2356 D45VH Series Silicon P-N-P Transistors Complementary to the D44VH Series Features: • Fast S w itc h in g ts < 500 ns resistive tf < 100 ns • L o w ^C E sa f - 1 0 V @ l c ~ 8A TERMINAL DESIGNATIONS T h e D 45V H -series o f s ilic o n p -n -p p o w e r tra n s is to rs are
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D45VH
D44VH
D45VH1
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FP4N100
Abstract: No abstract text available
Text: RFP4N100 33 HARRIS August 1991 High Voltage N-Channel Enhancem ent-M ode Power Field-Effect Transistors Features Package T O -2 2 0 A B T O P V IE W • 4.3A, 1000V • rDS on = 3 .5 0 • UIS S O A Rating C u rve (Single Pulse) • - 5 5 ° C to + 1 5 0 °C O perating Tem perature
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RFP4N100
FP4N100
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BPW38
Abstract: No abstract text available
Text: SOLID STATE 01 DE 3 f l 7 5 0 f l l DOnam 2 Optoelectronic Specifications. r - y Light Detector / i s Planar Silicon Photo-Darlington Amplifier BPW38 The GE Solid State BPW38 is a supersensitive NPN Planar Silicon Photodarlington Amplifier. For many applications, only the collector and emitter
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3fl750fll
BPW38
BPW38
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40664 SCR
Abstract: CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR
Text: VtC/1 Solid State DATABOOK Series C O S /M O S Digital Integrated Circuits This D A T A B O O K contains complete data and related appli cation notes on COS/M OS digital integrated circuits presently available from R C A Solid State Division as standard products.
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-500B
CR316
CR317
CR322
CR323
40664 SCR
CD4001AD
ICAN-6267
scr 40430
CD4014AD
RCA 40669
RCA 17853
siemens transistor manual
CD2500E
40555 SCR
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KSD 166
Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE EAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5
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MT-13
KSD 166
LT 7202 diode
Kertron
LA 4301
transistor KSP 13 801
KDA 1.2
2N5085
LT 7207
KSP 13 801
0/transistor KSP 13 801
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: File N um ber D44VM Series 2351 Silicon N-P-N Transistors Com plementary to the D45VM Series Features: • Fast S w itc h in g ts < 500 ns resistive t f < 75 ns ■ Very L o w VC E sat < 0 . 4 V @ i c = 4A T h e D 44V M -series o f s ilic o n n -p -n p o w e r tra n s is to rs are
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D44VM
D45VM
200/1H
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