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    Pimoroni Ltd PEAK-DCA75

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    DigiKey PEAK-DCA75 Bulk 1
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    Meilhaus Electronic ME AK-D37

    Lead, Connection, 37Way; Computer Interface:-; Product Range:-; Svhc:No Svhc (15-Jan-2019); No. Of Bits:12Bit Rohs Compliant: Yes |Meilhaus ME AK-D37
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    Newark ME AK-D37 Bulk 10 1
    • 1 $81.06
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    Phoenix Contact 1000708 (ALTERNATE: AK-DST/UK)

    Group Marker Label AK-DST/UK | Phoenix Contact 1000708
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    RS 1000708 (ALTERNATE: AK-DST/UK) Bulk 40 1
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    Phoenix Contact 1000779 (ALTERNATE: AK-DST/DIK)

    Group Marker Label AK-DST/DIK | Phoenix Contact 1000779
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    RS 1000779 (ALTERNATE: AK-DST/DIK) Bulk 50
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    Standex-Meder Electronics 3312185478

    Reed Relays REED RELAY SPST 1A 12V
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    TTI 3312185478 Tube 576 24
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    EAKD Datasheets Context Search

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    block diagram for vhdl based barrel shifter

    Abstract: multiplier accumulator unit with VHDL 256K DPRAM vhdl code for barrel shifter vhdl code for accumulator 16 bit single cycle mips vhdl barrel shifter code vhdl vhdl code for alu low power vhdl code for FFT vhdl code for speech processing
    Text: S YSTEM L EVEL I NTEGRATION EMBEDDED T EAKDSPCORE SYSTEM Syste m Clo Flash /R Prog OM ram SR Work AM spac e Data In/Ou t ck So urce Mast e Clock r EEPR OM Data Emb Micro edded contr Core oller Cach Mem e ory Micro co Perip ntroller herals Data In/Ou t Teak


    Original
    18micron block diagram for vhdl based barrel shifter multiplier accumulator unit with VHDL 256K DPRAM vhdl code for barrel shifter vhdl code for accumulator 16 bit single cycle mips vhdl barrel shifter code vhdl vhdl code for alu low power vhdl code for FFT vhdl code for speech processing PDF

    Untitled

    Abstract: No abstract text available
    Text: _diode2014-02.ec9 Page:18 Date: 2014/01/30 Thu 16:49:51 Si ngl eZenerDi ode PowerZenerDi ode •外観図 ST02120F1 OUTLI NE Package:1F 120V t :mm Uni 特 長 煙1 Wクラス 煙小型 SMD 煙車載用途も対応可能 U1 00 00 ① 品名略号 Type No.


    Original
    diode2014-02 PDF

    2N5969

    Abstract: 2n6182 2N6031 i8080 2N6030 2N5876 2N5879 2N5880 2N5883 2N5954
    Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST m hF:E SAT . VOLTA GES M 'c (A 4 M in . M ax. 6 VCE (V) 4 20 60 6 4 6 80 80 6 4 TO-3 60 60 5 2N 5884 TO-3 80 80 2N 5954 TO -66 90 2N 5955 TO -66 2N 5956 X m PNP DEVICE BR EAKDOY V OLTAGE S (V) 0.5 1 2 20


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    2N5876 2N5879 2N5880 2N5883 2N5884 2N5954 2N5955 2N5956 2N5958 2N5960 2N5969 2n6182 2N6031 i8080 2N6030 PDF

    TSA170

    Abstract: TSA47 tsa-43
    Text: 14. SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS TSA6.8 THRU TSA200 400 WATT SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS SMB BR EAKD O W N VOLTAG E DEVICE TYPE TSA6.8 V BR VOLTS NOM. ; - IT mA W O RKING PEAK REV. VOLTAG E (VRWM) VOLTS MAX. REV. LE AK A G E


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    TSA200 TSA10 TSA11 TSA12 TSA13 TSA15 TSA16 TSA18 TSA20 TSA22 TSA170 TSA47 tsa-43 PDF

    SD-5410-3

    Abstract: SD-5410-1 Phototransistor with base emitter SD-2410-1 SD-2410-2 SD-2410-3 SD-3410-1 SD-3410-2 SD-3410-3 SD-3410-4
    Text: WAVELENGTH, nanometers FIGURE 1. SPECTRAL RESPONSIVITY PHOTODARLINGTONS SILICON OPTICAL/ELECTRICAL CHARACTERISTICS (25°C) PARAM ETER LIG H T CURR EN T DARK C U RR EN T CO LLECTO R BR EAKDO W N E M IT T E R BR EA KD O W N L IG H T C U R R EN T RISE TIM E


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    100jiA 100mA SD-1410-lt SD-1410-2t SD-1410-3t SD-1410-2L) SD-5440 SD-5442 SD-1410 SD-2410 SD-5410-3 SD-5410-1 Phototransistor with base emitter SD-2410-1 SD-2410-2 SD-2410-3 SD-3410-1 SD-3410-2 SD-3410-3 SD-3410-4 PDF

    tsc170

    Abstract: EAKD TSC110 TSC51 TSC6 TSC180 TSC150 TSC18
    Text: TSC6.8 THRU TSC200 1500 WATT SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS SMC BR EAKD O W N VOLTAG E DEVICE TYPE V BR VOLTS NOM. •" IT mA W O RKING PEAK REV. VOLTAG E (VRWM) VOLTS M AX. REV. LEA K A G E a t VRW M dr) m icroa m p s M AX. PEAK REV. SURGE CURRENT


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    TSC200 TSC10 TSC11 TSC12 TSC13 TSC15 TSC16 TSC18 TSC27 TSC30 tsc170 EAKD TSC110 TSC51 TSC6 TSC180 TSC150 PDF

    2n6324

    Abstract: 2N6280 2N6281 2N6315 2N6316 2N6322 2N6323 2N6325 2N6326 2N6327
    Text: ^ 1 1 * II BR EAKDON /VIM V OLTAGE S hrE SAI VOLTA kGES <M ax. * < n —' m NPN DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST <C A) 2N6280 TO-63 160 140 6 4 20 30 120 20 2 1.2 2 2N6281 TO-63 180 150 6 4 20 30 120 20 2 1.2 2 2N6315 TO-66 60 60


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    2N6280 2N6281 2N6315 2N6316 2N6322 2N6323 2N6324 2N6325 2N6326 2N6327 PDF

    SB68

    Abstract: TSB130 kd 502 tsb20 EAKD
    Text: TSB6.8 THRU TSB180 600 WATT SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS SMB BR EAKD O W N VOLTAG E DEVICE TYPE V BR VOLTS NOM. - IT mA W O RKING PEAK REV. V O LTAG E (VRWM) VO LTS M AX. REV. LEA K AG E a t VR W M (Ir) m icroa m p s M A X . PEAK REV. SURGE


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    TSB180 TSB10 TSB11 TSB12 TSB13 TSB15 TSB16 TSB18 TSB20 TSB22 SB68 TSB130 kd 502 EAKD PDF

    2N5001

    Abstract: TCA 875 MW-82 2N5149 2N4999
    Text: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias


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    2N4999. 2N5001, 2N5147, 2N5149 2N5001 TCA 875 MW-82 2N4999 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIM7785-30SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 34.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 45 dBm at 7.7 GHz to 8.5 GHz ■ HIGH EFFICIENCY 77 add = 34 % at 7.7 GHz to 8.5 GHz ■ HIGH GAIN G-idB = 6.0dB at 7.7 GHz to 8.5 GHz


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    TIM7785-30SL TIM7785-30SL----- -----------------------------T1M7785-30SL PDF

    B1470

    Abstract: FS10KM-5 FS10KM5 K775 MAX240 30hm marking mitsubishi st Z3J MITSUBISHI MOSFET FS
    Text: MITSUBISHI Neh POWER MOSFET FS10KM-5 HIGH-SPEED SWITCHING USE FS10KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ±0.2 4» • V d s s . -2 5 0 V • rDS ON (MAX) . 0.52Q


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    FS10KM-5 O-220FN T0-220S, MAX240Â MAX60S O-220, O-220FN, O-220C, O-220S B1470 FS10KM-5 FS10KM5 K775 MAX240 30hm marking mitsubishi st Z3J MITSUBISHI MOSFET FS PDF

    JE13070

    Abstract: No abstract text available
    Text: File Number 1841 MJE13070, MJE13071 HARRIS SErilCOND SECTOR 5bE Î • 4302271 ODMGÒTl 3Tb H H A S 7 ^ 3 5 -/? 5-A S w itchM aif II Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications Features:


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    MJE13070, MJE13071 O-220AB 92CS-39969 MJE13070 PW-300 MJE13071 JE13070 PDF

    diodo zener 5,6 v

    Abstract: in5806 1N5815 Diode IN5815 T5 DIODO Diodo zener W IN5811 1N5663 1N5663A 1N5664
    Text: Zener Type No. 1N5663 1N 5 6 6 3A 1N 5664 1N 5664A Zener Voltage at Izr @ mA Volts MICROSEMI Max. Zener Impedance @ lZr Ohms Zener Voltage Tolerance No Im pedance Specified ” ” ” No S u ffix = 10% S u ffix A = 5% No S u ffix = ± 1 0% " " Power Rating


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    1N5663 DO-13 1N5663A 1N5664 1N5664A IN5665 1N5665A IN5666 1N5667 IN5668 diodo zener 5,6 v in5806 1N5815 Diode IN5815 T5 DIODO Diodo zener W IN5811 PDF

    n4944

    Abstract: 1N4942 1N4947 1N4948
    Text: I ttK ^ K - 1 1N4942 thru 1N4948 Microsemi Corp. MILITARY R EC T IFIER S FEATURES • • • • • • • M icrom iniature package. Voidless herm etically sealed glass package. Triple layer passivation. M etallurgically bonded. Fast recovery. PIV to 1,000 volts.


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    1N4942 1N4948 MIL-S-19500/286. Amp/MIL-STD-750 t-761 14jr970-8220 n4944 1N4947 1N4948 PDF

    EAKD

    Abstract: BUW12A
    Text: MOTOROLA SC XSTRS/R F 1HE D I I b3b?2S4 QüôM'iai 1 I MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA BUW 11,A BUW 12,A Designer's Data Sheet N P N Silicon Pow er Transistors Switchm ode Series These transistors are designed for high-voltage, high-speed, power switching in induc­


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    C0NTH01UNG O-218AC EAKD BUW12A PDF

    etf81

    Abstract: etf81-05 transistor x1 pv 25 ETF81-050 M101
    Text: E T F 8 1 - 5 15A Ì / N ? — =EÌs z l —JU —)V /< 7 - l : Outline Drawings 36 POWER TRANSISTOR MODULE 13 F e a tu re s • 7 'J - ii- f U > 9 ¥ 4 • h F E ^ S l' • K r tR -I» Including Free Wheeling Dtode 0 3.5 High DC Current Gain \ 22 1' Insulated Type


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    ETF81-050 E82988 0KI63 etf81 etf81-05 transistor x1 pv 25 ETF81-050 M101 PDF

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09 PDF

    d45vh

    Abstract: D45VH1
    Text: File N um ber 2356 D45VH Series Silicon P-N-P Transistors Complementary to the D44VH Series Features: • Fast S w itc h in g ts < 500 ns resistive tf < 100 ns • L o w ^C E sa f - 1 0 V @ l c ~ 8A TERMINAL DESIGNATIONS T h e D 45V H -series o f s ilic o n p -n -p p o w e r tra n s is to rs are


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    D45VH D44VH D45VH1 PDF

    FP4N100

    Abstract: No abstract text available
    Text: RFP4N100 33 HARRIS August 1991 High Voltage N-Channel Enhancem ent-M ode Power Field-Effect Transistors Features Package T O -2 2 0 A B T O P V IE W • 4.3A, 1000V • rDS on = 3 .5 0 • UIS S O A Rating C u rve (Single Pulse) • - 5 5 ° C to + 1 5 0 °C O perating Tem perature


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    RFP4N100 FP4N100 PDF

    BPW38

    Abstract: No abstract text available
    Text: SOLID STATE 01 DE 3 f l 7 5 0 f l l DOnam 2 Optoelectronic Specifications. r - y Light Detector / i s Planar Silicon Photo-Darlington Amplifier BPW38 The GE Solid State BPW38 is a supersensitive NPN Planar Silicon Photodarlington Amplifier. For many applications, only the collector and emitter


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    3fl750fll BPW38 BPW38 PDF

    40664 SCR

    Abstract: CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR
    Text: VtC/1 Solid State DATABOOK Series C O S /M O S Digital Integrated Circuits This D A T A B O O K contains complete data and related appli­ cation notes on COS/M OS digital integrated circuits presently available from R C A Solid State Division as standard products.


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    -500B CR316 CR317 CR322 CR323 40664 SCR CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR PDF

    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE EAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


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    MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801 PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    Untitled

    Abstract: No abstract text available
    Text: File N um ber D44VM Series 2351 Silicon N-P-N Transistors Com plementary to the D45VM Series Features: • Fast S w itc h in g ts < 500 ns resistive t f < 75 ns ■ Very L o w VC E sat < 0 . 4 V @ i c = 4A T h e D 44V M -series o f s ilic o n n -p -n p o w e r tra n s is to rs are


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    D44VM D45VM 200/1H PDF