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Untitled Abstract: No abstract text available Text: >LL'&''# &&#;A EVALUATION KIT )&&MWjji"+&L"'&)&#'&/&C>p RF Power Transistor Part Number: HVV1011-300 Evaluation Kit Part Number: HVV1011-300-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com	Original	HVV1011-300 HVV1011-300-EK 100B101JP500X J153-ND FXT000158 3-252510RS3394 P242393 SCAS-0440-08C ZSLW-004-M SCAS-0440-12M	PDF
Untitled Abstract: No abstract text available Text: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE	Original		PDF
100B270JP500X Abstract: NIPPON CAPACITORS MRF9210 DS0978 TRANSISTOR J408 865 marking amplifier Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9210R3 100B270JP500X NIPPON CAPACITORS MRF9210 DS0978 TRANSISTOR J408 865 marking amplifier	PDF
nippon capacitors Abstract: 2508051107Y0 3A412 MRF9210R3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with	Original	MRF9210/D MRF9210R3 nippon capacitors 2508051107Y0 3A412 MRF9210R3	PDF
180R9R1JW500X Abstract: nippon capacitors 3A412 MRF9210 MRF9210R3 Text: Freescale Semiconductor Technical Data Document Number: MRF9210 Rev. 5, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9210 MRF9210R3 180R9R1JW500X nippon capacitors 3A412 MRF9210 MRF9210R3	PDF
nippon capacitors Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9210 Rev. 3, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9210 MRF9210R3 MRF9210 nippon capacitors	PDF
mode 5 IFF Abstract: Coaxicom HVV1011-300 RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00 Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V	Original	HVV1011-300 429-HVVi EG-01-DS02B EG-01-DS02B8 mode 5 IFF Coaxicom RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00	PDF
MRF9210 Abstract: DS0978 nippon capacitors 2508051107Y0 3A412 180R8R2JW500X 100B4R3 100B270JP500X Text: MOTOROLA Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9210/D MRF9210 MRF9210 DS0978 nippon capacitors 2508051107Y0 3A412 180R8R2JW500X 100B4R3 100B270JP500X	PDF
nippon capacitors Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9210 Rev. 2, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9210 IS-95 MRF9210R3 nippon capacitors	PDF
nippon capacitors Abstract: 100B270JP500X 5 L 0380 R Text: Freescale Semiconductor Technical Data Document Number: MRF9210 Rev. 4, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9210 MRF9210R3 MRF9210 nippon capacitors 100B270JP500X 5 L 0380 R	PDF
nippon capacitors Abstract: transistor J585 Text: MOTOROLA Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9210/D MRF9210R3 nippon capacitors transistor J585	PDF