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    Kyocera AVX Components 100A101JW150XT1K

    CAP CER 100PF 150V P90 0505
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    DigiKey 100A101JW150XT1K Reel 11,000 1,000
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    • 1000 $2.07043
    • 10000 $1.9554
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    100A101JW150XT1K Cut Tape 2,321 1
    • 1 $4.75
    • 10 $3.65
    • 100 $2.8373
    • 1000 $2.2238
    • 10000 $2.2238
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    Kyocera AVX Components 100A100JW150XT1K

    CAP CER 10PF 150V P90 0505
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 100A100JW150XT1K Cut Tape 2,108 1
    • 1 $4.58
    • 10 $3.07
    • 100 $2.2664
    • 1000 $2.2664
    • 10000 $2.2664
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    100A100JW150XT1K Reel 500 500
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    TTM Technologies XC2100A-10S

    RF DIR COUPLER 2GHZ-2.3GHZ SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XC2100A-10S Reel 2,000 2,000
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    • 10000 $3.1125
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    Kyocera AVX Components 100A100FT150XT1K

    CAP CER 10PF 150V P90 0505
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    DigiKey 100A100FT150XT1K Reel 2,000 1,000
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    • 1000 $5.06914
    • 10000 $4.96975
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    100A100FT150XT1K Cut Tape 769 1
    • 1 $8.95
    • 10 $7.753
    • 100 $6.0432
    • 1000 $5.46672
    • 10000 $5.46672
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    Richardson RFPD 100A100FT150XT1K 1,000
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    • 10000 $1.44
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    Kyocera AVX Components 100A100FW150XT1K

    CAP CER 10PF 150V P90 0505
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 100A100FW150XT1K Cut Tape 1,794 1
    • 1 $8.52
    • 10 $7.387
    • 100 $5.7583
    • 1000 $5.20898
    • 10000 $5.20898
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    100A100FW150XT1K Reel 1,000 1,000
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    • 1000 $4.83015
    • 10000 $4.73544
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    Mouser Electronics 100A100FW150XT1K 2,050
    • 1 $6.52
    • 10 $5.59
    • 100 $4.23
    • 1000 $3.43
    • 10000 $3.36
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    Richardson RFPD 100A100FW150XT1K 36,000 1,000
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    • 1000 $2.69
    • 10000 $1.44
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    Find more 100A10 price and stock on Findchips.com

    100A10 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Type PDF
    100A100FT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100FT150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A100FW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100FW150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A100GT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100GT150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A100GW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100GW150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A100JT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100JT150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A100JW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100JW150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A101FT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101FT150XT1K American Technical Ceramics Ceramic Capacitor 100PF 150V P90 0505 Original PDF
    100A101FW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101FW150XT1K American Technical Ceramics Ceramic Capacitor 100PF 150V P90 0505 Original PDF
    100A101GT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101JCA150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101JP150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101JT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF

    100A10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Continental RSDA

    Abstract: AUTOMATIC PHASE SELECTOR 13VAC 200 Amp Fuse copper bus bar RSDA 100-280VAC
    Text: RS Series Single Phase DIN Rail Mount Relays FEATURES/BENEFITS • Automatic shutdown on • • • • • overtemperature Built-in, replaceable, semiconductor fuse Integrated heat sink Mounts on DIN rail or panel Optically isolated Touch safe • LED indicator


    Original     		PDF 28Vdc/9mA 280Vac 5-15mA 20Vac, amp-B00 Continental RSDA AUTOMATIC PHASE SELECTOR 13VAC 200 Amp Fuse copper bus bar RSDA 100-280VAC

    915 MHz RFID

    Abstract: HSMS-286A METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode
    Text: Surface Mount Microwave Schottky Detector Diodes in SOT-323 SC-70 Technical Data HSMS-285A Series HSMS-286A Series Features • Surface Mount SOT-323 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz


    Original     		PDF OT-323 SC-70) HSMS-285A HSMS-286A HSMS-285A 5965-8838E 5966-4282E 915 MHz RFID METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode

    epsilam 10

    Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial


    Original     		PDF LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239

    philips ferrite 4330-030

    Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF M3D159 LLE18010X SCA63 125002/00/02/pp12 philips ferrite 4330-030 philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005N MRFG35005NT1 MRFG35005ANT1. MRFG35005NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35005MT1 MRFG35005NT1.

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		PDF MRFG35010MT1 MRFG35010NT1 MRFG35010MT1

    transistor GT 1081

    Abstract: MRFG35010AR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		PDF MRFG35010A MRFG35010AR1 MRFG35010AR5 MRFG35010A transistor GT 1081 MRFG35010AR5

    GL 7812

    Abstract: ATC 2603 LDMOS NEC
    Text: N PRELIMINARY DATA SHEET IO 3W, L/S-BAND MEDIUM POWER NE552R479A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • CLASS AB OPERATION Linear Gain1 IN • ANALOG CELLULAR PHONES:


    Original     		PDF NE552R479A 24-Hour GL 7812 ATC 2603 LDMOS NEC

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242

    13009 TRANSISTOR equivalent

    Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to


    Original     		PDF MRFG35030R5/D MRFG35030R5 13009 TRANSISTOR equivalent D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent

    marking 0619

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005MT1 MRFG35005MT1 marking 0619

    8772 P

    Abstract: motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies


    Original     		PDF MRFG35003MT1/D MRFG35003MT1 8772 P motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor

    RF FET TRANSISTOR 3 GHZ

    Abstract: A113 MRFG35003NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N MRFG35003NT1 RF FET TRANSISTOR 3 GHZ A113 MRFG35003NT1

    Untitled

    Abstract: No abstract text available
    Text: TOKEN 電流感測電阻器 分流合金電阻器 採樣取樣電阻器 微歐姆低值電阻器 德鍵電子工業股份有限公司 台灣 : 台灣省台北縣五股鄉中興路一段 137 號 電話 : +886-2-29810109 ； 傳真 : +886-2-29887487 大陸 : 广东省深圳市南山区创业路中兴工业城综合楼十二楼


    Original     		PDF NE1/10, NE1/10 50ppm/Â 25ppm/Â 15ppm/Â 10ppm/Â

    6 017 03 61

    Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35010MT1 MRFG35010NT1. 6 017 03 61 A113 MRFG35010MT1 MRFG35010NT1 D55342M07

    Marking Z7 Gate Driver

    Abstract: MRFG35005MT1 A113 MRFG35005NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35005MT1 MRFG35005NT1. Marking Z7 Gate Driver MRFG35005MT1 A113 MRFG35005NT1

    MX0912B250Y

    Abstract: 33-AS IEC134 015 capacitor philips
    Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high


    OCR Scan     		PDF 33-AS" MX0912B250Y G04b34b T-33-Ã 711Dfl2b 004b352 0QMb43? MX0912B250Y 33-AS IEC134 015 capacitor philips

    Untitled

    Abstract: No abstract text available
    Text: S G S - T H O S I M S O N S D 1 89 5 -0 3 m . RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY ALL GOLD METALLIZED SYSTEM HIGH RELIABILITY AND RUGGEDNESS COOMON BASE P o u t = 15 W MIN. WITH 9.2 dB GAIN PIN CONNECTION


    OCR Scan     		PDF SD1895-03 D07D75h

    Untitled

    Abstract: No abstract text available
    Text: Philips Components MZ0912B100Y D ISC R ETE SEM ICO N D U CTO R S D a ta s h a e t • t a lu s P re fim in a iy s p e c ific a tio n d a le o f le s u e J u ly 1 9 9 0 NPN silicon planar epitaxial microwave power transistor FEATU RES APPLICATIO N D ESCRIPTIO N


    OCR Scan     		PDF MZ0912B100Y

    Untitled

    Abstract: No abstract text available
    Text: Whnl mL'nM HP Ea Wc kL aE rTdT Surface Mount Zero Bias Schottky Detector Diodes Technical Data Features • Surface M ount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: Package Lead Code Identification Top V iew 40 mV/|iW at 915 MHz 30 mV/jiW at 2.45 GHz


    OCR Scan     		PDF OT-23/ OT-143 HSMS-285X HSMS-285X OT-23 OT143 DD127Ã 5963-2333E 5963-5030E

    MF1011B900Y

    Abstract: SC15
    Text: Philips Semiconductors Product specification Microwave power transistor MF1011B900Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 |as pulse width, duty factor 10% Microwave performance up to T mb = 25 °C in a common-base class C


    OCR Scan     		PDF MF1011B900Y MLC725 OT448A. MF1011B900Y SC15

    NPN Silicon Epitaxial Planar Transistor

    Abstract: MZ0912B50Y TACAN
    Text: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting


    OCR Scan     		PDF MZ0912B50Y NPN Silicon Epitaxial Planar Transistor MZ0912B50Y TACAN

    30374

    Abstract: Esan
    Text: E-SAN ELECTRONIC CO LTD Active Delay Line TTL Interface • Industry Standard 24 E D • 10 Tap Output Specifications: • Delay tolerance BD374Q2 DOODQSfi Ö • /^3 100A Series • 30 Pin Dip Package Features: • Schottky TTL interface • Low power schottky available named " 1 00AL-1 Oxxx'


    OCR Scan     		PDF 30374Q2 20/TAP 10/TAP 100B-10xxx" 100AM-10xxx 00A-10500 00A-10101 00A-10151 00A-10201 00A-10251 30374 Esan