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    1 MBIT X 4 RAM Search Results

    1 MBIT X 4 RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AT49BV640D-70CI Rochester Electronics LLC AT49BV640D - 64-Mbit (4M x 16), Sectored Flash Visit Rochester Electronics LLC Buy
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy
    27S13A/BEA Rochester Electronics LLC 27S13A - 2048-Bit (512X4) Bipolar RAM Visit Rochester Electronics LLC Buy
    CY7C09389V-9AXI Rochester Electronics CY7C09389 - 3.3 V 64 K X 18 Synchronous Dual-Port Static RAM, Industrial Temp Visit Rochester Electronics Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy

    1 MBIT X 4 RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    numonyx

    Abstract: M36W0R604BT1 M36W0R604 M58WR064HTB PSRAM JESD97 M36W0R6040T1 M69AR024B 8810h 8811h
    Text: M36W0R6040T1 M36W0R604BT1 64 Mbit 4 Mb x16, Multiple Bank, Burst Flash memory and 16 Mbit (1 Mb ×16) PSRAM, multi-chip package Features • Multi-chip package – 1 die of 64 Mbit (4 Mb x 16) Flash memory – 1 die of 16 Mbit (1 Mb x 16) Pseudo SRAM ■


    Original     		PDF M36W0R6040T1 M36W0R604BT1 M36W0R6040T1: 8810h M36W0R604BT1: 8811h 128-bit 64-bit numonyx M36W0R604BT1 M36W0R604 M58WR064HTB PSRAM JESD97 M36W0R6040T1 M69AR024B 8810h 8811h

    Untitled

    Abstract: No abstract text available
    Text: M65KA128AE 128 Mbit 4 Banks x 2 Mbit x 16 1.8 V Supply, Low Power SDRAM Features summary • 128 Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 2 Mwords, each 16 bits wide ■ Synchronous Burst Read and Write – Fixed burst lengths: 1, 2, 4, 8 words or Full


    Original     		PDF M65KA128AE 133MHz

    M65KA128AE

    Abstract: No abstract text available
    Text: M65KA128AE 128 Mbit 4 Banks x 2 Mbit x 16 1.8 V Supply, Low Power SDRAM Features summary • 128 Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 2 Mwords, each 16 bits wide ■ Synchronous Burst Read and Write – Fixed burst lengths: 1, 2, 4, 8 words or Full


    Original     		PDF M65KA128AE 133MHz M65KA128AE

    m36w0r6050u

    Abstract: m36w0r6040u M36W0R5040 M36W0R5040u M36W0R6050U4 M36W0R6040U4 M69KM024A ADQ14 M69KM048A ADQ15
    Text: M36W0Rx0x0UL4 32- or 64-Mbit mux I/O, multiple bank, multilevel, burst flash memory, 16- or 32-Mbit PSRAM, 1.8 V supply MCP Features • ■ ■ Multichip package – 1 die of 32 Mbit (2 Mbit x 16) or 64 Mbit (4 Mbit x 16) mux I/O multiple bank, multilevel, burst) flash memory


    Original     		PDF M36W0Rx0x0UL4 64-Mbit 32-Mbit M36W0R5040U4: 8828h M36W0R5040L4: 8829h M36W0R6040U4 M36W0R6050U4: 88C0h m36w0r6050u m36w0r6040u M36W0R5040 M36W0R5040u M36W0R6050U4 M69KM024A ADQ14 M69KM048A ADQ15

    J-STD-020B

    Abstract: M36W0R5020B0 M36W0R5020T0 m36w0r5
    Text: M36W0R5020T0 M36W0R5020B0 32 Mbit 2Mb x16, Multiple Bank, Burst Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 32 Mbit (2Mb x 16) Flash Memory – 1 die of 4 Mbit (256Kb x16) SRAM • SUPPLY VOLTAGE


    Original     		PDF M36W0R5020T0 M36W0R5020B0 256Kb 8814h 8815h J-STD-020B M36W0R5020B0 M36W0R5020T0 m36w0r5

    rpa15

    Abstract: No abstract text available
    Text: M36W0R5020T0 M36W0R5020B0 32 Mbit 2Mb x16, Multiple Bank, Burst Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 32 Mbit (2Mb x 16) Flash Memory – 1 die of 4 Mbit (256Kb x16) SRAM • SUPPLY VOLTAGE


    Original     		PDF M36W0R5020T0 M36W0R5020B0 256Kb 8814h 8815h rpa15

    CYD01S36V

    Abstract: CYD02S36V CYD04S36V CYD09S36V CYD18S36V
    Text: CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM Features Functional Description • True dual-ported memory cells that allow simultaneous access of the same memory location The FLEx36 family includes 1-Mbit, 2-Mbit, 4-Mbit, 9-Mbit and


    Original     		PDF CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V FLEx36TM 32K/64K/128K/256K/512 FLEx36 18-Mbit CYD01S36V CYD18S36V-133BBI CYD02S36V CYD04S36V CYD09S36V CYD18S36V

    Untitled

    Abstract: No abstract text available
    Text: CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V PRELIMINARY FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM Features Functional Description • True dual-ported memory cells that allow simultaneous access of the same memory location The FLEx36 family includes 1-Mbit, 2-Mbit, 4-Mbit, 9-Mbit and


    Original     		PDF CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V FLEx36TM 32K/64K/128K/256K/512 18-Mbit 18-micron 256-ball CYD18S36V-133BBI

    CYD01S36V

    Abstract: CYD02S36V CYD04S36V CYD09S36V CYD18S36V 1.0mm pitch BGA
    Text: CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V PRELIMINARY FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM Features Functional Description • True dual-ported memory cells that allow simultaneous access of the same memory location The FLEx36 family includes 1-Mbit, 2-Mbit, 4-Mbit, 9-Mbit and


    Original     		PDF CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V FLEx36TM 32K/64K/128K/256K/512 FLEx36 18-Mbit CYD01S36V CYD02S36V CYD04S36V CYD09S36V CYD18S36V 1.0mm pitch BGA

    TFBGA105

    Abstract: M39P0R9070E0 M58PR512J M65KA128AL
    Text: M39P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 128 Mbit (4 Banks of 2Mb x16) Low


    Original     		PDF M39P0R9070E0 TFBGA105 64-bit 2112-bit TFBGA105 M39P0R9070E0 M58PR512J M65KA128AL

    LC324256BP

    Abstract: No abstract text available
    Text: Memory monolithic ICs 4 Mbit CMOS dynamic RAMs Package Device Type Humber of Drawing pins and j ; number configuration : Description Features LC324100AJ'' SOJ 26 3145A 4 Mbit (4 194 304 X 1j CMOS dynamic RAM LC324100AZV ZIP 20 3144A 4 Mbit (4 194 304 X 1) CMOS dynamic RAM


    OCR Scan     		PDF LC324100AJ' LC324100AZV LC324100AJlv LC324100AZLV LC324400AJV LC324400AZV LC324400AJL LC324400AZLV LC324800AJV LC324800AZ' LC324256BP

    LC324256BP

    Abstract: 3145A LC324100AJLV package zip-20 DYNAMIC RAM LC324256AJL RAM200
    Text: Memory monolithic ICs 4 Mbit CMOS dynamic RAMs Package Type Number of pins and configuration LC324100AJV SOJ 26 3145A 4 Mbit (4 194 304 X 1) CMOS dynamic RAM 60, 70, 80 ns access time, high-speed page mode LC324100AZ’ ZIP 20 3144 A 4 Mbit (4 194 304 X 1) CMOS dynamic RAM


    OCR Scan     		PDF LC324100AJV LC324100AZ' LC324100AJLV LC324100AZL9 LC324400AJV LC324400AZV LC324256BPV LC324256BJV LC324256BZV LC324256BPL' LC324256BP 3145A package zip-20 DYNAMIC RAM LC324256AJL RAM200

    AE920

    Abstract: No abstract text available
    Text: Preliminary a Advanced Micro Devices Am29C676 11-Bit DRAM Driver DISTINCTIVE CHARACTERISTICS • Ideal for driving the eleven address lines of 4 Mbit x 1 and 4 Mbit x 4 DRAMs Minimized output-to-output skews reduce memory access time ■ Capable of driving multiple RAS, CAS and WE


    OCR Scan     		PDF Am29C676 11-Bit 5148-019A 28-pin AE920

    Untitled

    Abstract: No abstract text available
    Text: Preliminary a Advanced Micro Devices Am29C676 11-Bit DRAM Driver DISTINCTIVE CHARACTERISTICS • Ideal for driving the eleven address lines of 4 Mbit x 1 and 4 Mbit x 4 DRAMs Minimized output-to-output skews reduce memory access time ■ Capable of driving multiple RAS, CAS and WE


    OCR Scan     		PDF Am29C676 11-Bit 5148-019A 28-pin

    Untitled

    Abstract: No abstract text available
    Text: HB56D136B Series 1,048,576-Word x 36-Bit High Density Dynamic RAM Module I • DESCRIPTION PIN OUT The HB56D136B is a 1M x 36 dynamic RAM module, mounted 8 pieces of 4 Mbit DRAM HM514400JP sealed in SOJ package and 4 pieces of 1 Mbit DRAM (HM511000AJP) sealed in SOJ package. An outline of the


    OCR Scan     		PDF HB56D136B 576-Word 36-Bit HM514400JP) HM511000AJP) 72-pin

    Untitled

    Abstract: No abstract text available
    Text: HB56G19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56G19 is a 1M x 9 dynamic RAM module, mount­ ed two 4 Mbit DRAM HM514400AS sealed in SOJ package and 1 Mbit DRAM (HM511000AJP) sealed in SOJ package.


    OCR Scan     		PDF HB56G19 576-Word HM514400AS) HM511000AJP) 30-pin HB56G19A) HB56G19B/

    Untitled

    Abstract: No abstract text available
    Text: Preliminary & Advanced Micro Devices Am29C676 11-Bit DRAM Driver DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ Ideal for driving the eleven address lines of 4 Mbit x 1 and 4 Mbit x 4 DRAMs Capable of driving multiple RAS, CAS and WE control lines Drive capability from 50 pF through 500 pF with


    OCR Scan     		PDF Am29C676 11-Bit 5148-017A 8-018A 5148-019A 28-pin

    Untitled

    Abstract: No abstract text available
    Text: HB56D136 Series 1,048,576-word x 36-bit High Density Dynamic RAM Module HITACHI Description The HB56D136 is a 1-M x 36-bit dynamic RAM module, mounted 8 pieces of 4 Mbit DRAM HM514400CS/CLS sealed in SOJ package and 2 pieces of 2 Mbit DRAM (HM512200BS/BLS) sealed in


    OCR Scan     		PDF HB56D136 576-word 36-bit HM514400CS/CLS) HM512200BS/BLS) 72-pin

    HM511000J

    Abstract: No abstract text available
    Text: • 44C,b2D3 nonni =i2s «hits HB56D236B S eries 2,097,152-Word x 36-Bit High Density Dynamic RAM Module ■ DESCRIPTION The HB56D236B is a 2M x 36 dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM HM514400JP sealed in SOJ package and 8 pieces of 1 Mbit DRAM


    OCR Scan     		PDF HB56D236B 152-Word 36-Bit HM514400JP) HM511000AJP) 72-pin HM511000J

    HM534253-10

    Abstract: No abstract text available
    Text: HM534253 Series 262144-Word x — Prelim inary 4-Bit Multiport CMOS Video RAM The HM534253 is a 1-Mbit multiport video RAM equipped with a 256-kword x 4-bit dynamic RAM and a 512-word x 4-bit SAM serial Pin Arrangement HM534253JP Series SC1 1 SI/OO « 2 S I/0 1 1 3


    OCR Scan     		PDF HM534253 262144-Word HM534253JP SI/03 SI/02 256-kword 512-word 00C8-68S HM534253-10

    Untitled

    Abstract: No abstract text available
    Text: HM534253A S eries- Preliminary 262,144-Word x 4-Bit Multiport CMOS Video RAM • DESCRIPTION The HM534253A is a 1-Mbit multiport video RAM equipped with a 256k-word x 4-bit dynamic RAM and a 512-word x 4-bit SAM serial access memory . Its RAM


    OCR Scan     		PDF HM534253A 144-Word 256k-word 512-word HM534253A

    Untitled

    Abstract: No abstract text available
    Text: ISSI' IS 4 2 S 1 6 1 2 8 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION SEPTEMBER 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.


    OCR Scan     		PDF IS42S16128 131072-word 16-bit 16-bit DR005-0A IS42S16128

    ms 7254 ver 3.0

    Abstract: AR-243 motorola bubble memory controller intel 7114 bubble
    Text: irrtei ARTICLE REPRINT AR-243 Thin-film detectors, X-ray lithography deliver 4-Mbit bubble chip Next-generation bubble memory chip is even smaller than the compatible, 1-Mbit device; set of support circuits takes care of memory system requirements. Propelled by X-ray lithogra­


    OCR Scan     		PDF AR-243 ms 7254 ver 3.0 AR-243 motorola bubble memory controller intel 7114 bubble

    HM534253AZ-8

    Abstract: HM534253AJ-8 HM534253A hitachi TNC HM534253AJ8
    Text: HM534253A S e rie s - Preliminary 262,144-Word x 4-Bit Multiport CMOS Video RAM • DESCRIPTION The HM534253A is a 1-Mbit multiport video RAM equipped with a 256k-word x 4-bit dynamic RAM and a 512-word x 4-bit SAM serial access memory . Its RAM


    OCR Scan     		PDF HM534253A 144-Word 256k-word 512-word 256-word HM534253AZ-8 HM534253AJ-8 hitachi TNC HM534253AJ8