RJ10 dimensions
Abstract: RCA-CD4016B 0G131 JS47
Text: G E SOLID STATE Dl dÊ | 3fl7SDfil 0G131Sb 4 j 01E 13156 D _ T - 5 7 - / 7 3875081 G E SOLID STATE CD4016B Types CMOS Quad Bilateral Switch For Transmission or Multiplexing o f Analog or Digital Signals High-Voltage Types 20-Volt Rating The RCA-CD4016B Series types are quad
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0G131Sb
CD4016B
20-Volt
RCA-CD4016B
CD4016
14-lead
RJ10 dimensions
0G131
JS47
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31-oq
Abstract: 7C342-25 CY7C342-35HMB 7C342-35 CY7C342 CY7C342B OQ11
Text: CY7C342 CY7C342B rif CYPRESS 128-Macrocell M AX EPLD Features Functional Description • 128 macrocells in 8 LABs • 8 dedicated inputs, 52 bidirectional I/O pins • Programmable interconnect array • 0.8-micron double-metal CMOS EPROM technology CY7C342
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CY7C342
CY7C342B
128-Macrocell
CY7C342)
65-micron
CY7C342B)
68-pin
CY7C342/CY7C342B
CY7C342/
CY7C342B
31-oq
7C342-25
CY7C342-35HMB
7C342-35
OQ11
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Untitled
Abstract: No abstract text available
Text: rruimi LTC1318 TECHNOLOGY Single 5V RS232/RS422/AppleTalk DCE Transceiver F€RTUR€S DCSCRIPTIOn • Single Chip Provides DCE RS232 or RS422/AppleTalk DCE Port ■ Operates from a Single 5V Supply ■ Charge Pump Uses 0.1 jjF Capacitors ■ Output Common-Mode Voltage Range Exceeds
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LTC1318
RS232/RS422/AppleTalkÂ
RS232
RS422/AppleTalk
RS232/RS422
100ns,
001311b
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Untitled
Abstract: No abstract text available
Text: CY7C344 CY7C344B W w CYPRESS 32-Macrocell MAX EPLD Features Functional Description • High-performance, high-density re placement for TTL, 74HC, and cus tom logic • 32 macrocells, 64 expander product terms in one LAB • 8 dedicated inputs, 16 I/O pins
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CY7C344
CY7C344B
32-Macrocell
CY7C344)
65-micron
CY7C344B)
28-pin
300-mil
28-pin
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1186C
Abstract: cxd1135q cxd1130q
Text: CXD1186CQ/CR SONY« C D - R O M Decoder Description CXD1186C is a CD-ROM decoder LSI. CXD1186CQ 80pln QFP Plastic Features CXD1186CR 80pin VQFP (Plastic) • Corresponds to CD-ROM, CD-I and CD-ROM XA formats. • Real time error Correction. (Erasure Correction
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CXD1186CQ/CR
CXD1186C
CXD1186CQ
80pln
CXD1186CR
80pin
CXD1186CQ/CR
00131b]
1186C
cxd1135q
cxd1130q
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K KM41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.
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DD131S7
KM41C4000AL
41C4000AL
41C4000AL-
130ns
150ns
100ns
180ns
200ns
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M5911
Abstract: No abstract text available
Text: SILICONIX INC IflE D • A5S473S D D I B I S I A ■ SST5912 ja rs s ö ä N-Channel JFET Pair / The SST5912 Is a monolithic pair of JFETs mounted In a single SO-8 package. The SST5912 features high speed amplification slew rate , high gain (typically > 6 mS), and low gate leakage (typically
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A5S473S
SST5912
SST5912
M5911
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Untitled
Abstract: No abstract text available
Text: r r u m . _ LTC1345 TECHNOLOGY Single Supply V.35 Transceiver FCATURCS DCSCRIPTIOn • Single Chip Provides All V.35 Differential Clock and Data Signals ■ Operates From Single 5V Supply ■ Shutdown Mode Reduces ice to 1mA Typ ■ Software Selectable DTE or DCE Configuration
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LTC1345
10MBaud
RS422/RS485
LTC1345
RS422
RS485
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LT1220
Abstract: No abstract text available
Text: um LTC1279 TECHNOLOGY 12-Bit óOOksps Sampling A /D C onverter w ith Shutdown F€flTUR€S DCSCRIPTIOn • Single Supply 5V or ±5V Operation ■ Sample Rate: 600ksps ■ 70dB S/ N + D and 74dB THD at Nyquist ■ Power Dissipation: 60mW Typ The LTC 1279 is a 1,4)is, 600ksps, sampling 12-bit A/D
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LTC1279
12-Bit
600ksps
600ksps,
12-bit
160ns
LTC1274/LTC1277
12-Bit,
100ksps
LTC1278
LT1220
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MT4LC4M4G6
Abstract: No abstract text available
Text: I TECHNOLOGY. INC. DRAM 4 MEG x 4 3.3V, BURST E D O FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single +3.3V ±5% power supply • All inputs and outputs are LVTTL-compatible with 5V
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048-cycle
24/26-Pin
00131ti4
MT4LC4M4G6
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MT28F400B3WG-8 tcp 41c
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0013140 220 »SnfiK KM 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4000A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.
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41C4000A
130ns
100ns
180ns
KM41C4000A
Q0131SS
18-LEAD
20-LEAD
001315b
MT28F400B3WG-8 tcp 41c
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AUDIO POWER AMPLIFIER WITH 4558 DRIVER
Abstract: BA6396FP ic 4558 audio diagram 4558 Audio amplifier BTL POWER AMPLIFIER ic 4558 d audio amplifier 4558 T04 transistor DD131 HSOP28 LH71
Text: BA6396FP 4-channel BTL driver The BA6396FP is a 4-channel BTL driver for the motors or actuators on a CD player. Dimensions U n its : mm BA6396FP (HSOP28) Features • • available in a HSOP28 package supply voltage range (6 ~ 9V) • gain of driver output can be changed
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BA6396FP
HSOP28
BA6396FP
HSOP28)
100mA
DG1317T
AUDIO POWER AMPLIFIER WITH 4558 DRIVER
ic 4558 audio diagram
4558 Audio amplifier
BTL POWER AMPLIFIER ic 4558 d
audio amplifier 4558
T04 transistor
DD131
LH71
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DD131
Abstract: No abstract text available
Text: CY7C343 CY7C343B CYPRESS 64-Macrocell MAX EPLD Functional Description Features • 64 MAX macrocells in 4 LABs • 8 dedicated inputs, 24 bidirectional I/O pins • Programmable interconnect array • 0.8-micron double-metal CMOS E P R O M technology CY7C343
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CY7C343
CY7C343B
64-Macrocell
CY7C343)
65-micron
CY7C343B)
44-pin
CY7C343/CY7C343B
44-pin
DD131
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Untitled
Abstract: No abstract text available
Text: CY7C346 CY7C346B CYPRESS 128-Macrocell M AX EPLD Features Functional Description • 128 macrocells in 8 LABs • 20 dedicated inputs, 64 bidirectional I/O pins • Programmable interconnect array • 0.8-micron double-metal CMOS EPROM technology CY7C346
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CY7C346
CY7C346B
128-Macrocell
CY7C346/CY7C346B
of7400-series
20-pin
CY7C346/
CY7C346B
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ALC 887
Abstract: VLH-12 AN6477FBP QFH064-P-1414
Text: Panasonic ICs for Telephone AN6477FBP S peech N etw ork 1C Incorporating C ross-P o int Sw itch • Overview T h e A N 6 4 7 7 F B P is a s p e e c h n e tw o rk 1C w hich includes a transm itter/receiver noise reducing function and is suitable for quality cordless telephones. It incorpo
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AN6477FBP
AN6477FBP
ALC 887
VLH-12
QFH064-P-1414
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELE CTRONICS INC b4E J> • 7 ^ 4 1 4 2 Q013174 b03 ■ KM41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A S L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A ccess M em ory.
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Q013174
KM41C4000ASL
130ns
4000ASL-
150ns
180ns
20-LEAD
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2SK622
Abstract: dl50a Hitachi Scans-001
Text: blE D MMIböDS 0D131Dh 325 iH i m 2SK622 S.0mu L ¿ IS SILICO N N-CHANNEL MOS F E T HIGH SPEED POWER SWITCHING • FEATURES • 9 • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown Suitable for Switching Regulator, DC-DC Converter
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0D131Dh
To-25Â
-2SK622
2SK622
dl50a
Hitachi Scans-001
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CD40298
Abstract: No abstract text available
Text: E SOLID G 3875081 STATE Gl D e 3ö?SDö1i G E S OL ID STATE 01E 0 D1 3 1c12 Ö 13192 7 1 ¥ £ - 3 3 -¿ > CD4029B Types CMOS Presettable Up/Down Counter Binary or BCD -D ecade
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CD4029B
4029B.
CD40298
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2SK622
Abstract: DL50A
Text: b lE D M M Ib ö D S 0D 131D h 325 iH im 2SK622 S.0mu L ¿ IS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance 0.6 ± 0.2 9 High Speed Switching • Low Drive Current 1.Gate 2. Drain Flange 3. Source (Dimensions in mm)
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0D131Dh
To-25Â
01310ci
-2SK622
2SK622
DL50A
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ch8i
Abstract: MH74C14 ch7i NSC600 ma4116 ADC0844 ADC0844BCJ ADC0844BCN ADC0844CCN ADC0848
Text: National Semiconductor ADC0844/ADC0848 8-Bit juP Compatible A /D Converters with Multiplexer Options G eneral Description Features The ADC0844 and ADC0848 are CMOS 8-bit successive approximation A /D converters with versatile analog input multiplexers. The 4-channel or 8-channel multiplexers can
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ADC0844/ADC0848
ADC0844
ADC0848
ADC0844BCN
ADC0844CCN
ADC0848BCN
ADC0848CCN
ADC0844BCJ
ADC0844CCJ
ADC0848BCJ
ch8i
MH74C14
ch7i
NSC600
ma4116
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G013G
Abstract: 05V3 7C342-30 7C342-35 CY7C342 CY7C342B CY7C342-30RMB K941 12J8 CY7C342-35JC
Text: CY7C342 CY7C342B ^ CYPRESS 128-Macrocell M AX EPLD Features Functional Description • 128 macrocells in 8 LABs • 8 dedicated inputs, 52 bidirectional I/O pins • Programmable interconnect array • 0.8-micron double-metal CMOS EPROM technology CY7C342
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CY7C342
CY7C342B
128-Macrocell
CY7C342)
65-micron
CY7C342B)
68-pin
CY7C342/CY7C342B
CY7C342/
G013G
05V3
7C342-30
7C342-35
CY7C342-30RMB
K941
12J8
CY7C342-35JC
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Untitled
Abstract: No abstract text available
Text: CYPRESS 64-Macrocell Flash CPLD is designed to bring the ease of use and high performance of the 22V10 to higbdensity CPLDs. Features • 64 macrocells in four logic blocks • 64 I/O pins • 6 dedicated inputs including 4 clock pins • No hidden delays
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64-Macrocell
22V10
CY7C373
84-pin
100-pin
CY7C374
CY7C37ICATIONS
lash370,
25flTbb2
CY7C373
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2SK696
Abstract: DL100A Hitachi Scans-001
Text: 4 ^ 5 0 5 QD13137 TTT • H I T M HITACHI/Í0PT0ELECTR0NICS blE D 2SK696 ~ SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • 1- Gate 2. Drain F lange ) 3. Source ( Dimensions in mm 5 Low On-Resistance • High Speed Switching • Low Drive Current
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Q013137
Ta-25Â
2SK696
2SK696
DL100A
Hitachi Scans-001
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2SK696
Abstract: No abstract text available
Text: 4 ^ 5 0 5 QD13137 TTT • H I T M HITACHI/Í0PT0ELECTR0NICS blE D 2SK696 ~ SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • 1- Gate 2. Drain F lange ) 3. Source ( Dimensions in mm 5 Low On-Resistance • High Speed Switching • Low Drive Current
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Q013137
Ta-25Â
PWS10
2SK696
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