Si6983DQ
Abstract: No abstract text available
Text: Si6983DQ Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V - 5.4 0.030 at VGS = - 2.5 V - 4.8 0.042 at VGS = - 1.8 V - 4.0 • TrenchFET Power MOSFET Pb-free - 20 APPLICATIONS
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Si6983DQ
Si6983DQ-T1
Si6983DQ-T1-E3
08-Apr-05
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Si4621DY-T1-E3
Abstract: si4621 S6078 Schottky Diode 20V 5A
Text: Si4621DY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V 6.2 0.094 at VGS = - 4.5 V 4.7 Qg (Typ) 4.5 nC • LITTLE FOOT Plus Schottky RoHS APPLICATIONS
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Si4621DY
Si4621DY-T1-E3
S-60787
08-May-06
si4621
S6078
Schottky Diode 20V 5A
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Si5483DU-T1-E3
Abstract: si5483
Text: Si5483DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.043 at VGS = - 2.5 V - 12a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area
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Si5483DU
18-Jul-08
Si5483DU-T1-E3
si5483
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74613
Abstract: 62472 AN609 Si4724CY 147665
Text: Si4724CY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4724CY
AN609
08-May-06
74613
62472
147665
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SI7812DN
Abstract: No abstract text available
Text: Si7812DN Vishay Siliconix New Product N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ) 8 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm
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Si7812DN
Si7812DN-T1-E3
18-Jul-08
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DS75
Abstract: STDS75 STLM75
Text: STDS75 Digital temperature sensor and thermal watchdog Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±0.5°C (typ) accuracy – ±2°C (max) accuracy from –25°C to +100°C ■ Low operating current: 125 µA (typ)
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STDS75
DS75
STDS75
STLM75
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Untitled
Abstract: No abstract text available
Text: STDS75 Digital temperature sensor and thermal watchdog Datasheet − production data Features • Measures temperatures from –55 °C to +125 °C –67 °F to +257 °F – ±0.5 °C (typ) accuracy – ±2 °C (max) accuracy from –25 °C to +100 °C ■
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STDS75
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Untitled
Abstract: No abstract text available
Text: WSZ Vishay Wirewound Resistors, Surface Mount, Silicone or Cement Coated, High Power FEATURES • Low cost, high power up to 4 W Pb-free • All welded construction Available • Ideal for pulsing application e3 • Ceramic core RoHS* • Available on tape and reel
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E12/E241)
18-Jul-08
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si4456
Abstract: TB-17 Si4456DY Si4456DY-T1-E3
Text: Si4456DY Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A)a 0.0038 at VGS = 10 V 33 0.0045 at VGS = 4.5 V 31 Qg (Typ) 37.5 nC • TrenchFET Gen II Power MOSFET • 100 % Rg and UIS Tested RoHS
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Si4456DY
Si4456DY-T1-E3
08-Apr-05
si4456
TB-17
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DPDT 6 terminal switch internal diagram
Abstract: HP4192A J-STD-020B 16-bump
Text: DG3015 Vishay Siliconix New Product Low-Voltage, Low rON, Dual DPDT Analog Switch DESCRIPTION FEATURES The DG3015 is a dual double-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low
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DG3015
DG3015
S-60735-Rev.
08-May-06
DPDT 6 terminal switch internal diagram
HP4192A
J-STD-020B
16-bump
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Si4904DY-T1-E3
Abstract: S-6077
Text: Si4904DY Vishay Siliconix Dual N-Channel 40-V MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • UIS Tested PRODUCT SUMMARY VDS V 40 rDS(on) (Ω) ID (A) 0.016 at VGS = 10 V 8 0.019 at VGS = 4.5 V 8 Qg (Typ) 5.6 RoHS COMPLIANT APPLICATIONS
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Si4904DY
Si4904DY-T1-E3
S-60779-Rev.
08-May-06
S-6077
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Si4441EDY
Abstract: Si4441EDY-T1
Text: Si4441EDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.016 at VGS = - 10 V - 10.6 0.026 at VGS = - 4.5 V - 8.3 • TrenchFET Power MOSFET • ESD Protected: 2500 V Pb-free Available
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Si4441EDY
Si4441EDY-T1
Si4441EDY-T1-E3
S-60777-Rev.
08-May-06
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Si7864ADP
Abstract: Si7864ADP-T1-E3
Text: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ rDS(on)
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Si7864ADP
Si7864ADP-T1-E3
S-60782-Rev.
08-May-06
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Si4386DY
Abstract: SI4386DY-T1-E3
Text: Si4386DY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 16 0.0095 at VGS = 4.5 V 13.5 Qg (Typ) 11 • TrenchFET Gen II Power MOSFETS • PWM Optimized • 100 % Rg Tested
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Si4386DY
Si4386DY-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4441EDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.016 at VGS = - 10 V - 10.6 0.026 at VGS = - 4.5 V - 8.3 • TrenchFET Power MOSFET • ESD Protected: 2500 V Pb-free Available
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Si4441EDY
Si4441EDY-T1
Si4441EDY-T1-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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transistor c900
Abstract: DS75 STDS75 STLM75
Text: STDS75 Digital temperature sensor and thermal watchdog Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±2°C Accuracy from –25°C to +100°C (max) ■ Low operating current: 125µA (typ) ■ No external components required
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STDS75
150ms
transistor c900
DS75
STDS75
STLM75
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CTLB058834-005
Abstract: CTLB058834-006 CTLB058834-009 CTLB058834-014 CTLB058834016 CTLB058834-017 CTLB058834-019 1877160
Text: 501-664 Qualification Test Report 01Nov07 Rev A Metal Shell Micro Circular Connector System 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics Metal Shell Micro Circular Connector System threaded version to determine its conformance to the requirements of Product Specification 108-2169 Revision
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01Nov07
08May06
20Sep07.
CTLB058834-005,
CTLB058834-006,
CTLB058834-009,
CTLB058834-014,
CTLB058834016,
CTLB058834-005
CTLB058834-006
CTLB058834-009
CTLB058834-014
CTLB058834016
CTLB058834-017
CTLB058834-019
1877160
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Untitled
Abstract: No abstract text available
Text: Si4456DY Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A)a 0.0038 at VGS = 10 V 33 0.0045 at VGS = 4.5 V 31 Qg (Typ) 37.5 nC • TrenchFET Gen II Power MOSFET • 100 % Rg and UIS Tested RoHS
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Si4456DY
Si4456DY-T1-E3
18-Jul-08
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THERMOSTAT SCHEMATIC
Abstract: DS75 thermometer serial ds75 STDS75 STLM75
Text: STDS75 Digital temperature sensor and thermal watchdog Features • Measures temperatures from –55 °C to +125 °C –67 °F to +257 °F – ±0.5 °C (typ) accuracy – ±2 °C (max) accuracy from –25 °C to +100 °C ■ Low operating current: 125 µA (typ)
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STDS75
THERMOSTAT SCHEMATIC
DS75
thermometer serial ds75
STDS75
STLM75
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Si7806BDN
Abstract: Si7806BDN-T1-E3
Text: Si7806BDN Vishay Siliconix New Product N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0145 at VGS = 10 V 12.6 0.0205 at VGS = 4.5 V 10.6 • TrenchFET Power MOSFETS • PWM Optimized • New Low Thermal Resistance PowerPAK®
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Si7806BDN
Si7806BDN-T1-E3
S-60790-Rev.
08-May-06
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SUD19N20-90-E3
Abstract: SUD19N20-90
Text: SUD19N20-90 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.090 at VGS = 10 V 19 0.105 at VGS = 6 V 17.5 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized 100 % Rg Tested
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SUD19N20-90
O-252
SUD19N20-90-E3
08-Apr-05
SUD19N20-90-E3
SUD19N20-90
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88550
Abstract: BYS459F-1500 JESD22-B102D J-STD-002B BYS459-1500 BYS459B-1500 BYS459B-1500E3
Text: BYS459-1500, BYS459F-1500 & BYS459B-1500 Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • Fast reverse recovery time • Low switching loss, high efficiency • Low forward voltage drop
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BYS459-1500,
BYS459F-1500
BYS459B-1500
O-220AC
ITO-220AC
BYS459-1500
O-263AB
O-263AB
J-STD-020C
88550
BYS459F-1500
JESD22-B102D
J-STD-002B
BYS459-1500
BYS459B-1500
BYS459B-1500E3
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Untitled
Abstract: No abstract text available
Text: Si4904DY Vishay Siliconix Dual N-Channel 40-V MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • UIS Tested PRODUCT SUMMARY VDS V 40 rDS(on) (Ω) ID (A) 0.016 at VGS = 10 V 8 0.019 at VGS = 4.5 V 8 Qg (Typ) 5.6 RoHS COMPLIANT APPLICATIONS
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Si4904DY
Si4904DY-T1-E3
08-Apr-05
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DS75
Abstract: STDS75 STLM75 thermometer serial ds75
Text: STDS75 Digital temperature sensor and thermal watchdog Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±2°C accuracy from –25°C to +100°C (max) ■ Low operating current: 125 µA (typ) ■ No external components required
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STDS75
DS75
STDS75
STLM75
thermometer serial ds75
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