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    Vishay Intertechnologies SI7864ADP-T1-GE3

    MOSFETs 20V 29A 5.4W 3.0mohm @ 4.5V
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    SI7864ADP Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)


    Original     		PDF Si7864ADP Si7864ADP-T1-E3 Si7864ADP-T1-GE3 11-Mar-11

    Si7864ADP-T1-E3

    Abstract: Si7864ADP
    Text: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)


    Original     		PDF Si7864ADP Si7864ADP-T1-E3 Si7864ADP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)


    Original     		PDF Si7864ADP Si7864ADP-T1-E3 Si7864ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 @ VGS = 10 V 29 0.0042 @ VGS = 4.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5-V Rated Low 3.5-mΩ rDS(on)


    Original     		PDF Si7864ADP Si7864ADP-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 at VGS = 10 V 29 0.0042 at VGS = 4.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ rDS(on)


    Original     		PDF Si7864ADP Si7864ADP-T1-E3 08-Apr-05

    Si7864ADP

    Abstract: Si7864ADP-T1-E3
    Text: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ rDS(on)


    Original     		PDF Si7864ADP Si7864ADP-T1-E3 S-60782-Rev. 08-May-06

    Si7864ADP-T1-E3

    Abstract: Si7864ADP Si7864DP Si7864DP-T1 Si7864DP-T1-E3
    Text: Specification Comparison Vishay Siliconix Si7864ADP vs. Si7864DP Description: Package: Pin Out: N-Channel MOSFET PowerPAK SO-8 Identical Part Number Replacements Si7864ADP-T1 Replaces Si7864DP-T1 Lead Pb -free: Si7864ADP-T1-E3 Replaces Si7864DP-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si7864ADP Si7864DP Si7864ADP-T1 Si7864DP-T1 Si7864ADP-T1-E3 Si7864DP-T1-E3 08-Nov-06

    Untitled

    Abstract: No abstract text available
    Text: Si7864ADP New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 @ VGS = 4.5 V 29 0.0042 @ VGS = 2.5 V 25 Qg (Typ) TrenchFETr Power MOSFETS: 2.5-V Rated Low 3.5-mΩ rDS(on) PWM (Qgd and Rg) Optimized


    Original     		PDF Si7864ADP Si7864ADP-T1--E3 S-42103--Rev. 15-Nov-04

    74140

    Abstract: Si7864ADP 759 vishay
    Text: SPICE Device Model Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7864ADP 18-Jul-08 74140 759 vishay

    7555

    Abstract: 9006 AN609 Si7864ADP
    Text: Si7864ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7864ADP AN609 03-Aug-07 7555 9006

    Untitled

    Abstract: No abstract text available
    Text: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)


    Original     		PDF Si7864ADP Si7864ADP-T1-E3 Si7864ADP-T1-GE3 08-Apr-05

    si7864adp

    Abstract: No abstract text available
    Text: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 @ VGS = 10 V 29 0.0042 @ VGS = 4.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5-V Rated Low 3.5-mΩ rDS(on)


    Original     		PDF Si7864ADP Si7864ADP-T1--E3 S-51566-Rev. 07-Nov-05

    Untitled

    Abstract: No abstract text available
    Text: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ rDS(on)


    Original     		PDF Si7864ADP Si7864ADP-T1-E3 08-Apr-05

    SI7864ADP-T1-E3

    Abstract: si7864adp
    Text: Si7864ADP New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 29 0.0042 @ VGS = 2.5 V 25 Qg (Typ) 57 TrenchFETr Power MOSFETS: 2.5-V Rated Low 3.5-mW rDS(on) PWM (Qgd and Rg) Optimized


    Original     		PDF Si7864ADP Si7864ADP-T1--E3 S-42352--Rev. 20-Dec-04 SI7864ADP-T1-E3

    Si7336ADP-T1-E3

    Abstract: Si7336ADP Si7336ADP-T1 Si7336DP Si7336DP-T1 Si7336DP-T1-E3 Si7864ADP Si7864DP
    Text: Specification Comparison Vishay Siliconix Si7336ADP vs. Si7336DP Description: Package: Pin Out: N-Channel MOSFET PowerPAK SO-8 Identical Part Number Replacements Si7336ADP-T1 Replaces Si7336DP-T1 Lead Pb -Free: Si7336ADP-T1-E3 Replaces Si7336DP-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si7336ADP Si7336DP Si7336ADP-T1 Si7336DP-T1 Si7336ADP-T1-E3 Si7336DP-T1-E3 06-Nov-06 Si7864ADP Si7864DP

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS