Untitled
Abstract: No abstract text available
Text: IRFP244_RC, SiHFP244_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFP244
SiHFP244
AN609,
08-Jun-10
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sot-23 L13
Abstract: gl05t-gs08 MARKING CODE L13
Text: GL05T to GL24T Vishay Semiconductors Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES • IEC 61000-4-5 lightning see IPPM below 3 • ESD-protection acc. IEC 61000-4-2 ± 8 kV contact discharge ± 15 kV air discharge • Small package for use in portable electronics
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GL05T
GL24T
OT-23
2002/95/EC
18-Jul-08
sot-23 L13
gl05t-gs08
MARKING CODE L13
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as 21921
Abstract: No abstract text available
Text: GSOT05CL-V Vishay Semiconductors Two-Line ESD-Protection in SOT-23 FEATURES • Two-line ESD-protection device 1 2 • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • Space saving SOT-23 package 3 20456 • AEC-Q101 qualified
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GSOT05CL-V
OT-23
OT-23
AEC-Q101
2002/95/EC
2002/96/EC
GSOT05CL-V
GSOT05CL-V-G-08
as 21921
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Untitled
Abstract: No abstract text available
Text: VS-16TTS.SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 16 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 2 Anode • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21
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VS-16TTS.
J-STD-020,
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFP254_RC, SiHFP254_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFP254
SiHFP254
AN609,
08-Jun-10
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178 12T
Abstract: vs-12tts08
Text: VS-12TTS08SPbF High Voltage Series Vishay Semiconductors Phase Control SCR, 8 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition
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VS-12TTS08SPbF
J-STD-020,
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
178 12T
vs-12tts08
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GSOT15-G-08
Abstract: No abstract text available
Text: GSOT03 to GSOT36 Vishay Semiconductors Single-Line ESD-Protection in SOT-23 FEATURES 3 • Single-line ESD-protection device • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge 1 2 • Space saving SOT-23 package 20421 20512
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GSOT03
GSOT36
OT-23
OT-23
AEC-Q101
2002/95/EC
2002/96/EC
GSOT04
GSOT05
GSOT15-G-08
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Untitled
Abstract: No abstract text available
Text: VS-10TTS08SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 10 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21
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VS-10TTS08SPbF
J-STD-020,
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PA 66 FLAMABILITY RATING: UL94-V0 COLOR: GREEN METAL HOUSING: BRASS CuZn TERMINAL SCREW: STEEL ZINC PLATING "-" SLOT TYPE WIRE GUARD: STAINLESS STEEL SURFACE OF SOLDER TAIL PLATING: TIN A ENVIRONMENTAL
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UL94-V0
300VAC
E315414
08-JUN-10
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Untitled
Abstract: No abstract text available
Text: VS-10TTS08SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 10 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21
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VS-10TTS08SPbF
J-STD-020,
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFP250_RC, SiHFP250_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFP250
SiHFP250
AN609,
08-Jun-10
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VS-12TTS08SPbF
Abstract: No abstract text available
Text: VS-12TTS08SPbF High Voltage Series Vishay Semiconductors Phase Control SCR, 8 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition
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VS-12TTS08SPbF
J-STD-020,
2002/95/EC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: 255104-01-XX.XX NOTES: DRAWING NO. 1. PACKAGE CABLE ASSEMBLY IN BAG. TAG IN BAG WITH "AMPHENOL CONNEX, 2. CABLE ASSEMBLY TO BE 100% TESTED FOR HI-POT,CONTINUITY,SHORTS AND OPEN. DESCRIPTION A THIRD ANGLE PROJ. 255104-01-XX.XX AND DATE CODE". REVISIONS REV
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255104-01-XX
08-Jun-10
RG-316
assembly/255104-01-XX
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Untitled
Abstract: No abstract text available
Text: IRFP23N50L_RC, SiHFP23N50L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFP23N50L
SiHFP23N50L
AN609,
08-Jun-10
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10TTS08
Abstract: 10TTS08S AN-994 SMD-220 an9948
Text: VS-10TTS08SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 10 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21
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VS-10TTS08SPbF
J-STD-020,
2002/95/EC
11-Mar-11
10TTS08
10TTS08S
AN-994
SMD-220
an9948
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Untitled
Abstract: No abstract text available
Text: 255104-08-XX.XX NOTES: DRAWING NO. 1. PACKAGE 1 CABLE ASSEMBLY IN BAG. LABEL BAG WITH AMPHENOL 255104-08-XX.XX AND DATE CODE. REVISIONS REV DESCRIPTION A THIRD ANGLE PROJ. B 2. CABLE ASSEMBLY TO BE 100% TESTED FOR HI-POT, CONTINUITY, SHORTS AND OPEN. C RELEASE TO MFG.
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255104-08-XX
06-Aug-10
11-Jul-13
08-Jun-10
RG-178
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IRFP264
Abstract: AN609
Text: IRFP264_RC, SiHFP264_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFP264
SiHFP264
AN609,
08-Jun-10
AN609
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GSOT03C
Abstract: GSOT04C GSOT05C GSOT08C GSOT12C GSOT15C GSOT36C GSOT05C-GS08
Text: GSOT03C to GSOT36C Vishay Semiconductors Two-Line ESD-Protection in SOT-23 FEATURES • Two-line ESD-protection device 1 2 • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • Space saving SOT-23 package 3 20456 20512
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GSOT03C
GSOT36C
OT-23
OT-23
AEC-Q101
2002/95/EC
2002/96/EC
GSOT03C
GSOT04C
GSOT05C
GSOT04C
GSOT05C
GSOT08C
GSOT12C
GSOT15C
GSOT36C
GSOT05C-GS08
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IRFP240* spice
Abstract: IRFP240R
Text: IRFP240_RC, SiHFP240_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFP240
SiHFP240
AN609,
08-Jun-10
IRFP240* spice
IRFP240R
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IRF*260
Abstract: No abstract text available
Text: IRFP260_RC, SiHFP260_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFP260
SiHFP260
AN609,
08-Jun-10
IRF*260
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28-5940
Abstract: 71004
Text: Si3477DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si3477DV
AN609,
6936u
3562m
9719m
9148u
3406m
5349m
08-Jun-10
28-5940
71004
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08JUN10
Abstract: No abstract text available
Text: 4 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 2 3 REVISIONS R E LE A S E D FO R P U B LIC A T IO N BY 1 7 C 0 ELEC TR O N IC S C O RPO RATIO N . ALL INTERNATIONAL RIGHTS RESERVED . AF 50 D E S C R IP T IO N 08JUN10 HMR PD REVISED RER E C R - 1 0 - 0 0 4 0 5 8
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OCR Scan
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08JUN10
08JUN10
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R A LL C O P Y R IG H T BY ^ 0 0 E L E C T R O N IC S P U B L IC A T IO N IN TE R N A TIO N A L RIGHTS REVI SI ONS 50 R E S E R VE D . C O R P O R A T IO N . LTR D E S C R IP T IO N H RE VISED D
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OCR Scan
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PDF
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08JUN10
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R A LL BY ^ 0 0 C O P Y R IG H T E L E C T R O N IC S P U B L IC A T IO N IN TE R N A TIO N A L RIGHTS R E V IS IO N S 50 R E S E R VE D . C O R P O R A T IO N . LTR D E S C R IP T IO N REVISED
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08JUN10
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