irfp23n50
Abstract: D25D
Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration
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Original
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IRFP23N50L,
SiHFP23N50L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irfp23n50
D25D
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PDF
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IRFP23N50L
Abstract: SiHFP23N50L 91209 irfp23n50
Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration
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Original
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IRFP23N50L,
SiHFP23N50L
O-247
18-Jul-08
IRFP23N50L
91209
irfp23n50
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration
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Original
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IRFP23N50L,
SiHFP23N50L
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration
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Original
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IRFP23N50L,
SiHFP23N50L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP23N50L_RC, SiHFP23N50L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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IRFP23N50L
SiHFP23N50L
AN609,
08-Jun-10
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration
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Original
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IRFP23N50L,
SiHFP23N50L
2002/95/EC
O-247AC
11-Mar-11
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PDF
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IRFP23N50L
Abstract: SiHFP23N50L irfp23N50
Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration
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Original
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IRFP23N50L,
SiHFP23N50L
O-247
18-Jul-08
IRFP23N50L
irfp23N50
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PDF
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irfp23n50
Abstract: IRFP23N50LP
Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration
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Original
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IRFP23N50L,
SiHFP23N50L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irfp23n50
IRFP23N50LP
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration
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Original
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IRFP23N50L,
SiHFP23N50L
O-247
12-Mar-07
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PDF
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