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    Cal-Chip Electronics CHV1206N250820FCT

    HVCAP1206 COG 82PF 1% 250V
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    Cal-Chip Electronics CHV1206N500820FCT

    HVCAP1206 COG 82PF 1% 500V
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    Cal-Chip Electronics CHV0805N250820FCT

    HVCAP0805 COG 82PF 1% 250V
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    Cal-Chip Electronics CHV0603N250820FCT

    HVCAP0603 COG 82PF 1% 250V
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    VENKEL LTD C0805C0G500-820FNE

    CAP CER 82PF 50V C0G/NP0 0805
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    DigiKey C0805C0G500-820FNE Reel 7,725 4,000
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    Venkel Ltd. C0805C0G500-820FNE Reel 4,000 9 Weeks, 2 Days 4,000
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    0820F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: K6F2008V2M, K6F2008S2M, K6F2008R2M Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 2, 1996 Advance 0.1 Revise - Remove sTSOP1 from product


    Original
    PDF K6F2008V2M, K6F2008S2M, K6F2008R2M 256Kx8 KM68F2000 100ns) 0820F)

    K6X1008C2D-GF55

    Abstract: K6X1008C2D-TF55 K6X1008C2D-TB55 K6X1008C2D-F samsung k6x1008c2d K6X1008C2D-TF70
    Text: Preliminary CMOS SRAM K6X1008C2D Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.


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    PDF K6X1008C2D 128Kx8 32-TSOP1-0820R 0820F) K6X1008C2D-GF55 K6X1008C2D-TF55 K6X1008C2D-TB55 K6X1008C2D-F samsung k6x1008c2d K6X1008C2D-TF70

    K6T1008C2E-GB70

    Abstract: K6T1008C2E-TB55
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.


    Original
    PDF K6T1008C2E 128Kx8 0820F) K6T1008C2E-GB70 K6T1008C2E-TB55

    KM68V512ALTE-10L

    Abstract: 64Kx8 CMOS RAM KM68U512ALE-L
    Text: KM68V512A, KM68U512A Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 17, 1996 Advance 0.1 Initial draft - One datasheet for commercial, extended and industrial product.


    Original
    PDF KM68V512A, KM68U512A 64Kx8 KM68V512A 32-sTSOP KM68V512ALTE-10L 64Kx8 CMOS RAM KM68U512ALE-L

    EN25QH

    Abstract: 1AEF00 cFeon* SPI Flash
    Text: EN25QH256 EN25QH256 256 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt • Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3 • 256 M-bit Serial Flash - 256 M-bit/32,768 K-byte/131,072 pages


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    PDF EN25QH256 M-bit/32 K-byte/131 80MHz 50MHz EN25QH 1AEF00 cFeon* SPI Flash

    K6X1008

    Abstract: K6X1008T2D K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q SAMSUNG K6X1008T2D-TF70 K6X1008T2D-PF70
    Text: K6X1008T2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type. - Added Commercial product.


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    PDF K6X1008T2D 128Kx8 32-TSOP1-0820R, 32-TSOP1-0813 32-SOP-525 32-TSOP1-0820F 0820F) K6X1008 K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q SAMSUNG K6X1008T2D-TF70 K6X1008T2D-PF70

    KM68S2000LT-12L

    Abstract: KM68S2000LT-15L
    Text: KM68S2000 Family Preliminary CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 History Draft Date Remark Initial draft September 30, 1997 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


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    PDF KM68S2000 256Kx8 256Kx8 KM68S2000LT-12L KM68S2000LT-15L

    K6T4008V1C-VF70

    Abstract: K6T4008U1C K6T4008V1C K6T4008V1C-B KM68U4000C
    Text: K6T4008V1C, K6T4008U1C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied - Speed bin change KM68U4000C : 85/100ns 70/85/100ns


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    PDF K6T4008V1C, K6T4008U1C 512Kx8 KM68U4000C 85/100ns 70/85/100ns 32-TSOP1-0820 32-TSOP1-0813 K6T4008V1C-VF70 K6T4008V1C K6T4008V1C-B KM68U4000C

    package tsop1

    Abstract: K6T2008U2M K6T2008V2M K6T2008V2M-B KM68U2000 KM68V2000
    Text: K6T2008V2M, K6T2008U2M Family CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 30, 1997 Advance 0.1 Initial draft April 7, 1997 Preliminary 1.0 Finalize


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    PDF K6T2008V2M, K6T2008U2M 256Kx8 KM68V2000 70/85ns KM68V2000I, KM68U2000, KM68U2000I 85/100ns 047MAX package tsop1 K6T2008V2M K6T2008V2M-B KM68U2000 KM68V2000

    K6T2008U2A

    Abstract: K6T2008U2A-B K6T2008U2A-F K6T2008V2A K6T2008V2A-B K6T2008V2A-F K6T2008V2A-YF70
    Text: K6T2008V2A, K6T2008U2A Family CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target May 26, 1998 Advance 1.0 Finalize October 8, 1998 Final 2.0 Revised - Add FBGA type package


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    PDF K6T2008V2A, K6T2008U2A 256Kx8 85/Typ. 25/Typ. K6T2008U2A-B K6T2008U2A-F K6T2008V2A K6T2008V2A-B K6T2008V2A-F K6T2008V2A-YF70

    KM68U2000A

    Abstract: KM68U2000ALI-L KM68U2000AL-L KM68V2000A KM68V2000ALI-L KM68V2000AL-L KM68V2000ALTGI-8L
    Text: KM68V2000A, KM68U2000A Family CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target May 26, 1998 Advance 1.0 Finalize October 8, 1998 Final 2.0 Revised - Add FBGA type package


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    PDF KM68V2000A, KM68U2000A 256Kx8 85/Typ. 25/Typ. KM68U2000ALI-L KM68U2000AL-L KM68V2000A KM68V2000ALI-L KM68V2000AL-L KM68V2000ALTGI-8L

    km681000clg-5l

    Abstract: KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000C KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L
    Text: PRELIMINARY KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft November 22, 1995 Design target 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA


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    PDF KM681000C 100ns 0820R) km681000clg-5l KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L

    68 1103

    Abstract: KM681000BL A14F
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced


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    PDF KM681000BL 128Kx8 385mW KM681OOOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681OOOBLT/BLT-L 0820F) KM681000BLR/BLR-L: 68 1103 A14F

    Untitled

    Abstract: No abstract text available
    Text: KM681OOOBLI/BLI-L CMOS SRAM 131,072 W O RD x 8 Bit C M O S Static RAM<mdustnai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns max.) • Low Power Dissipation Standby (CMOS) : 550;<W(max.)


    OCR Scan
    PDF KM681OOOBLI/BLI-L 100ns 110mW KM681000BLGI/BLG-L 32-SOP-525 KM681000BLTI/BLTI-L 32-TSOP1-0820F KM681000BLRI/BLRI-L 32-TSOP1-0820R KM681000BLI/BLI-L

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550(iW (max.) L Version 110fiW (max.) U- Version Operating : 385mW(max.) • Single 5V±10% Power Supply


    OCR Scan
    PDF KM681000BL 128Kx8 110fiW 385mW KM681OQOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681000BLT/BLT-L 0820F)

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft for com m ercial product - Com mercial Product only O ctober 28th, 1992 Prelim inary 0.1 - Initial draft for Extended/Industrial Product


    OCR Scan
    PDF KM681000B 0820F) 0820R)

    km68512lg

    Abstract: km68512l 68512 KM68512LT
    Text: KM68512ÜL-L CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55, 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 1(VW (typ.) L-Version 5(iW (typ.) LL-Version Operating : 35mW (typ.)


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    PDF KM68512 100ns KM68512LG/LG-L: 32-pin 525mil) KM68512LT/LT-L: KM68512L/L-L 288-bit km68512lg km68512l 68512 KM68512LT

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM68V1000E, KM68U1000E Family Document Title 128Kx8 bit Low Power and Low Voltage CMOS Static RAM Révision History Revision No. 0.0 History Design target Draft Data Remark Septem ber 9, 1998 Prelim inary The attached datasheets are provided by SAM SU N G Electronics. SAM SU N G Electronics CO., LTD. reserves the right to change the specifications and


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    PDF KM68V1000E, KM68U1000E 128Kx8 1000E 525mil)

    Untitled

    Abstract: No abstract text available
    Text: K M 6 8 V 2 0 0 0 , K M 6 8 U 2 0 0 0 Fami l y CM OS SRAM Dacuro ent T\t\ 2 56 Kx 8 bit Low Power and Low Voltage C M O S Static RAM R e v is io n N o . H is to ry D raft D ata R em ark 0.0 Design target January 30th 1997 Advance 0.1 Initial draft April 7th 1997


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    PDF KM68V2000 70/85ns KM68V2000I, 68U2000, KM68U2000I 85/100ns 0820F)

    Untitled

    Abstract: No abstract text available
    Text: CM O S SRAM KM681OOOBLI/BLI-L 1 3 1 ,0 7 2 W O fíD X 8 B it C M O S S ts tic R A M industriai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation


    OCR Scan
    PDF KM681OOOBLI/BLI-L 100ns 110mW KM681000BLGI/BLG-L 32-SOP-525 KM681000BLTI/BLTI-L 32-TSOP1-0820F KM681000BLRI/BLRI-L 32-TSOP1-0820R KM681000BLI/BLI-L

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM68FU2000, KM68FS2000, KM68FR2000 Family CMOS SRAM 256Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM68FU2000, KM68FS2000 and KM68FR2000 • Organization : 256K x 8


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    PDF KM68FU2000, KM68FS2000, KM68FR2000 256Kx8 KM68FU2000 KM68FS2000 32-SOP, 32-TSOP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM68S4000C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Data Remark June 15, 1998 Prelim inary The attached datasheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right


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    PDF KM68S4000C 512Kx8 512Kx8

    KM681000AL-L

    Abstract: KM681000ALT
    Text: CMOS SRAM KM681000AL/KM681OOOAL-L 128K X8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/j W (typ.) L-Version 5piW (typ.) LL-Version O perating : 35m W (typ.) • Single 5 V ± 1 0 % Power Supply


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    PDF KM681000AL/KM681OOOAL-L 120ns 81000A KM681OOOALG/ALG-L: KM681000ALT/ALT-L KM681OOOALR/ALR-L: KM681OOOAL/AL-L 576-bit KM681000AL/KM681000AL-L KM681000AL-L KM681000ALT

    2183A

    Abstract: No abstract text available
    Text: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V


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    PDF KM68V1000C, KM68U1000C 128Kx8 KM68V1000C 32-SOP, 32-TSOP 32-sTSOP 2183A