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    km68512lg

    Abstract: km68512l 68512 KM68512LT
    Text: KM68512ÜL-L CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55, 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 1(VW (typ.) L-Version 5(iW (typ.) LL-Version Operating : 35mW (typ.)


    OCR Scan     		PDF KM68512 100ns KM68512LG/LG-L: 32-pin 525mil) KM68512LT/LT-L: KM68512L/L-L 288-bit km68512lg km68512l 68512 KM68512LT

    Untitled

    Abstract: No abstract text available
    Text: b?E V SAMSUNG ELECTRONICS INC m 7 ^ 4 1 4 5 00174^4 flG3 I ISM6K KM68512L/L-L CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55, 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version


    OCR Scan     		PDF KM68512L/L-L 100ns KM66512LG/LG-L: 32-pin 525mil) KM68512LT/LT-L: KM68512L/L-L 288-bit KM68512Ã

    Untitled

    Abstract: No abstract text available
    Text: KM68512L/L-L CMOS SRAM 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85 ns max. • Low Power Dissipation Standby (CMOS): 550jiW (max.) L Version 110nW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power S upply


    OCR Scan     		PDF KM68512L/L-L 64Kx8 550jiW 110nW 385mW KM68512LG/LG-L 32-pin 525mil) KM68512LT/LT-L

    Untitled

    Abstract: No abstract text available
    Text: KM68512L/L-L CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 10/iW (typ.) L-Version 5fiW (typ.) LL-Version Operating : 55mW/1MHz (Max.)


    OCR Scan     		PDF KM68512L/L-L 100ns 10/iW 55mW/1MHz KM68512LG/LG-L: 32-SOP-525 KM68512LT/LT-L 32-TSOP1-0820F KM68512L/L-L 288-bit

    KM68512LG

    Abstract: KM-66 KM68512
    Text: KM68512L/L-L CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55, 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 10/iW (typ.) L-Verslon 5/iW (typ.) LL-Version Operating : 3EmW (typ.)


    OCR Scan     		PDF KM68512L/L-L 100ns 10/iW KM68512LG/LG 32-pin 525mil) KM68512LT/LT-L: KM68512L/L-L 288-bit KM68512LG KM-66 KM68512

    km68512lg

    Abstract: ob2535 cs250 KM68512LT 10MW KM6651
    Text: SAMSUNG ELECTRONICS INC b?E J> m 7^4142 KM68512ÜL-L 00174^4 ÖQ3 « S Í I G * CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 55, 70, 85, 100ns max. • Low P ow er D issipa tion S tandby (CMOS): 10^W (typ.) L V ersion


    OCR Scan     		PDF KM68512Ã 100ns KM68512LG/LG-L: 32-pin 525mil) KM68512LT/LT-L: KM68512UL-L 288-bit KM68512L/L-L km68512lg ob2535 cs250 KM68512LT 10MW KM6651

    KM68512LG

    Abstract: KM68512 KM68512LT
    Text: CMOS SRAM KM68512UL-L 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5^W (typ.) LL-Version Operating : 55mW/1MHz (Max.) • Single 5 V ± 1 0 % Power Supply


    OCR Scan     		PDF KM68512UL-L 100ns 55mW/1MHz KM68512LG/LG-L: 32-SOP-525 KM68512LT/LT-L 32-TSOP1-0820F KM68512L/L-L 288-bit KM68512LG KM68512 KM68512LT