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    SI1417DH Search Results

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    SI1417DH Price and Stock

    Vishay Siliconix SI1417DH-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI1417DH-T1 2,320 5
    • 1 -
    • 10 $1.125
    • 100 $0.4219
    • 1000 $0.315
    • 10000 $0.2925
    Buy Now
    Quest Components SI1417DH-T1 1,856
    • 1 $1.5
    • 10 $1.5
    • 100 $0.45
    • 1000 $0.39
    • 10000 $0.39
    Buy Now

    SI1417DH Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si1417DH Vishay Intertechnology P-Channel 12-V (D-S) MOSFET Original PDF
    SI1417DH Vishay Siliconix MOSFETs Original PDF
    Si1417DH SPICE Device Model Vishay P-Channel 12-V (D-S) MOSFET Original PDF

    SI1417DH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1417DH Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • TrenchFET Power MOSFETS: 1.8 V Rated • Thermally Enhanced SC-70 Package


    Original
    PDF Si1417DH SC-70 OT-363 SC-70 Si1417DH-T1 Si1417DH-T1-E3 08-Apr-05

    Si1417DH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1417DH Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si1417DH 18-Jul-08

    Si1417DH

    Abstract: No abstract text available
    Text: Si1417DH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –3.3 0.115 @ VGS = –2.5 V –2.9 0.160 @ VGS = –1.8 V –2.4 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package


    Original
    PDF Si1417DH SC-70 OT-363 SC-70 S-20918--Rev. 01-Jul-02

    Si1417DH

    Abstract: 828S
    Text: SPICE Device Model Si1417DH Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si1417DH 15-Jul-02 828S

    Untitled

    Abstract: No abstract text available
    Text: Si1417DH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –3.3 0.115 @ VGS = –2.5 V –2.9 0.160 @ VGS = –1.8 V –2.4 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package


    Original
    PDF Si1417DH SC-70 OT-363 SC-70 08-Apr-05

    Si1417DH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1417DH Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si1417DH S-50151Rev. 07-Feb-05

    Si1417DH

    Abstract: 71197
    Text: New Product Si1417DH Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • TrenchFET Power MOSFETS: 1.8 V Rated • Thermally Enhanced SC-70 Package


    Original
    PDF Si1417DH SC-70 OT-363 SC-70 Si1417DH-T1 Si1417DH-T1-E3 18-Jul-08 71197

    AN609

    Abstract: Si1417DH
    Text: Si1417DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si1417DH AN609 01-Mar-06

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original
    PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original
    PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8