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    06VL Search Results

    06VL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NP90N06VLG-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP90N06VLG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP60N06VLK-E2-AY Renesas Electronics Corporation 60 V – 60 A – N-channel Power MOS FET Visit Renesas Electronics Corporation
    NP90N06VLK-E1-AY Renesas Electronics Corporation 60 V – 90 A – N-channel Power MOS FET Visit Renesas Electronics Corporation
    NP90N06VLK-E2-AY Renesas Electronics Corporation 60 V – 90 A – N-channel Power MOS FET Visit Renesas Electronics Corporation
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    06VL Price and Stock

    NMB Technologies Corporation 2406VL-05W-B39-B50

    FAN AXIAL 60X15MM 24VDC WIRE
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    DigiKey 2406VL-05W-B39-B50 Box 3,232 1
    • 1 $11.68
    • 10 $10.415
    • 100 $9.6118
    • 1000 $8.48983
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    Newark 2406VL-05W-B39-B50 Bulk 150
    • 1 $13.48
    • 10 $13.48
    • 100 $13.48
    • 1000 $12.65
    • 10000 $11.64
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    Renesas Electronics Corporation NP60N06VLK-E1-AY

    P-TRS2 AUTOMOTIVE MOS
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    DigiKey NP60N06VLK-E1-AY Cut Tape 3,222 1
    • 1 $2.4
    • 10 $1.542
    • 100 $2.4
    • 1000 $0.77529
    • 10000 $0.77529
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    NP60N06VLK-E1-AY Digi-Reel 3,222 1
    • 1 $2.4
    • 10 $1.542
    • 100 $2.4
    • 1000 $0.77529
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    NP60N06VLK-E1-AY Reel 2,500 2,500
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    Avnet Americas NP60N06VLK-E1-AY Reel 18 Weeks 2,500
    • 1 $0.72
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    Mouser Electronics NP60N06VLK-E1-AY 2,485
    • 1 $1.6
    • 10 $1.33
    • 100 $1.06
    • 1000 $0.763
    • 10000 $0.681
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    Avnet Silica NP60N06VLK-E1-AY 20 Weeks 2,500
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    Renesas Electronics America NP60N06VLK-E1-AY Tape & Reel (TR) 3,222 1
    • 1 $2.4
    • 10 $1.542
    • 100 $1.0524
    • 1000 $0.77529
    • 10000 $0.675
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    Nexperia MMBT3906VL

    TRANS PNP 40V 0.2A TO-236AB
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    DigiKey MMBT3906VL Digi-Reel 3,140 1
    • 1 $0.13
    • 10 $0.08
    • 100 $0.13
    • 1000 $0.03116
    • 10000 $0.02328
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    MMBT3906VL Cut Tape 3,140 1
    • 1 $0.13
    • 10 $0.08
    • 100 $0.13
    • 1000 $0.03116
    • 10000 $0.02328
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    Mouser Electronics MMBT3906VL 49,011
    • 1 $0.1
    • 10 $0.058
    • 100 $0.03
    • 1000 $0.021
    • 10000 $0.016
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    TTI MMBT3906VL Reel 40,000
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    Avnet Silica MMBT3906VL 10 Weeks 10,000
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    EBV Elektronik MMBT3906VL 10 Weeks 10,000
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    NMB Technologies Corporation 2406VL-05W-B69-B50

    FAN AXIAL 60X15MM 24VDC WIRE
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    DigiKey 2406VL-05W-B69-B50 Box 1,122 1
    • 1 $11.67
    • 10 $10.398
    • 100 $9.5946
    • 1000 $8.47597
    • 10000 $8.47597
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    NXP Semiconductors MC56F8006VLC

    IC MCU 16BIT 16KB FLASH 32LQFP
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    DigiKey MC56F8006VLC Tray 989 1
    • 1 $6.66
    • 10 $5.128
    • 100 $4.37888
    • 1000 $4.01966
    • 10000 $3.79386
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    Avnet Americas MC56F8006VLC Tray 13 Weeks 1,250
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    Mouser Electronics MC56F8006VLC 1,267
    • 1 $6.66
    • 10 $4.38
    • 100 $4.1
    • 1000 $3.69
    • 10000 $3.69
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    Avnet Silica MC56F8006VLC 15 Weeks 250
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    EBV Elektronik MC56F8006VLC 15 Weeks 250
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    Flip Electronics MC56F8006VLC 1,965
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    06VL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    15N06VL

    Abstract: transistor mj 4035 369D AN569 MTD15N06VL MTD15N06VLT4 15n06v
    Text: 06VL Power MOSFET 15 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


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    MTD15N06VL MTD15N06VL/D 15N06VL transistor mj 4035 369D AN569 MTD15N06VL MTD15N06VLT4 15n06v PDF

    FOH 300

    Abstract: No abstract text available
    Text:  #RTKN '630LFURFRPSXWHU $'63/ 3URGXFW1DPH+HUH 3UHOLPLQDU\7HFKQLFDO'DWD 3UHOLPLQDU\7HFKQLFDO'DWD $785(6 3HUIRUPDQFH W W W W W W W  6LQJOH&\FOH ,QVWUXFWLRQ ([HFXWLRQ 6LQJOH&\FOH &RQWH[W 6ZLWFK %XV $UFKLWHFWXUH $OORZV 'XDO 2SHUDQG )HWFKHV LQ (YHU\ ,QVWUXFWLRQ &\FOH


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    630LFURFRPSXWHU FOH 300 PDF

    15N06VL

    Abstract: 15n06v 06vl diode sod-123 marking code 12
    Text: 06VL Power MOSFET 15 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge


    Original
    MTD15N06VL MTD15N06VL/D 15N06VL 15n06v 06vl diode sod-123 marking code 12 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP30N 06VL TMOS V Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This


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    MTP30N06VL/D TP30N 21A-06 PDF

    TP52N06V

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M TP52N 06VL TM O S V P ow er Field E ffe c t T ransistor M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FE T 52 A M P E R E S TM O S V is a new te ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is tance area p rod u ct a bo u t o n e -h a lf th a t of sta n d a rd M O SFETs. This


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M M D 06VL/D SEMICONDUCTOR TECHNICAL DATA Product Preview M M D F3N 06VL TMOS V SO-8 for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This


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    F3N06VL/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M M D 06VL/D SEMICONDUCTOR TECHNICAL DATA Product Preview M M D F3N 06VL TMOS V SO-8 for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This


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    F3N06VL/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP15N 06VL TMOS V™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This


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    MTP15N06VL/D TP15N 21A-06 PDF

    06vl

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M 06VL TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance


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    MTB30N06VL/D TB30N06VL 06vl PDF

    TP50N

    Abstract: 06vl
    Text: MOTOROLA Order this document by 06VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 06VL TMOS V Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0-032 OHM


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    MTP50N06VL/D TP50N 06vl PDF

    motorola 15N 06VL

    Abstract: 15N 50 mosfet 15N06VL
    Text: MOTOROLA Order this document by 06VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T D 15N 0 6V L TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on “ 0.085 OHM N-Channel Enhancement-Mode Silicon Gate


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    MTD15N06VL/D motorola 15N 06VL 15N 50 mosfet 15N06VL PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M 06VL TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0-085 OHM N-Channel Enhancement-Mode Silicon Gate TM O S V i s a new te ch n o lo g y d esig n ed to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O SFETs. T h is


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M 06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M 06VL TMOS V™ Power Field Effect Transistor DPAK for S urface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.085 OHM N-Channel Enhancement-Mode Silicon Gate


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    TD15N06VL/D TD15N06VL MTD15N06VL/D PDF

    hall marking code A04

    Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
    Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”


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    2PHX14226-31 hall marking code A04 M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code PDF