MOSFET SOT-23 marking code M2
Abstract: No abstract text available
Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si2312BDS
2002/95/EC
O-236
OT-23)
Si2312BDS-T1-E3
Si2312BDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
MOSFET SOT-23 marking code M2
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Si1499DH
Abstract: P-Channel mosfet sot-363 Si1499DH-T1-E3
Text: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b
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Si1499DH
OT-363
SC-70
2002/95/EC
18-Jul-08
P-Channel mosfet sot-363
Si1499DH-T1-E3
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA911EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiA911EDJ
18-Jul-08
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Si1926DL-T1-GE3
Abstract: SI1926DL-T1-E3
Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si1926DL
2002/95/EC
OT-363
SC-70
Si1926DL-T1-E3
Si1926DL-T1-GE3
18-Jul-08
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IRFB20N50K
Abstract: SiHFB20N50K SiHFB20N50K-E3
Text: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB20N50K,
SiHFB20N50K
O-220
2002/95/EC
18-Jul-08
IRFB20N50K
SiHFB20N50K-E3
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si1965
Abstract: No abstract text available
Text: Si1965DH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 12 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) a
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Si1965DH
2002/95/EC
OT-363
SC-70
Si1965DH-T1-E3
Si1965DH-T1-GE3
18-Jul-08
si1965
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SI7454CDP-T1-GE3
Abstract: Si7454CDP
Text: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0305 at VGS = 10 V 22 VDS (V) 100 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm
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Si7454CDP
2002/95/EC
Si7454CDP-T1-GE3
18-Jul-08
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si1869dh-t1-ge3
Abstract: Si1869DH-T1-E3 si1869 620td SC70-6 SI1869DH
Text: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a
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Si1869DH
SC70-6
6124lectual
18-Jul-08
si1869dh-t1-ge3
Si1869DH-T1-E3
si1869
620td
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Untitled
Abstract: No abstract text available
Text: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB20N50K,
SiHFB20N50K
2002/95/EC
O-220
O-220
IRFB20N50KPbF
SiHFB20N50hay
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () ID (A) 0.0305 at VGS = 10 V 22 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21
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Si7454CDP
2002/95/EC
Si7454CDP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b
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Si1499DH
OT-363
SC-70
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SI1926DL-T1-E3
Abstract: No abstract text available
Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si1926DL
2002/95/EC
OT-363
SC-70
Si1926DL-T1-E3
Si1926DL-T1-GEemarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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XF1001-SC
Abstract: F1001-SC XF1001-SC-0G0T 0S226 S parameters of 5.8 GHz transistor XF1001
Text: DC-6.0 GHz 1.0W Packaged HFET F1001-SC April 2010 - Rev 05-Apr-10 Features Functional Block Diagram 46.5 dBm OIP3 @ 5.8 GHz 15.5 dB Gain @ 2 GHz 10.0 dB Gain @ 6 GHz 30.0 dBm P1dB SOT-89 Package General Description The XF1001-SC is a high linearity Hetrojunction Field Effect
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F1001-SC
05-Apr-10
OT-89
XF1001-SC
OT-89
F1001-SC
XF1001-SC-0G0T
0S226
S parameters of 5.8 GHz transistor
XF1001
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Untitled
Abstract: No abstract text available
Text: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () ID (A) 0.0305 at VGS = 10 V 22 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21
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Si7454CDP
2002/95/EC
Si7454CDP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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DG9451
Abstract: Room 335 JESD78
Text: DG9451 Vishay Siliconix 8-Channel Multiplexer, with 0.5 pC Charge Injection DESCRIPTION FEATURES The DG9451 is a precision low voltage, single and dual supply CMOS analog 8-channel multiplexer. The DG9451 is designed to operate from a + 2.7 V to + 12 V single supply or from ± 5 V dual supplies and is fully specified
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DG9451
DG9451
18-Jul-08
Room 335
JESD78
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR800DP
18-Jul-08
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V2770
Abstract: No abstract text available
Text: SPICE Device Model SiR896DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR896DP
18-Jul-08
V2770
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Untitled
Abstract: No abstract text available
Text: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB20N50K,
SiHFB20N50K
O-220
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si2323CDS
Abstract: 0749
Text: SPICE Device Model Si2323CDS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si2323CDS
18-Jul-08
0749
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SIR876DP
Abstract: No abstract text available
Text: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm
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SiR876DP
2002/95/EC
SiR876DP-T1-GE3
18-Jul-08
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SIR878DP
Abstract: No abstract text available
Text: New Product SiR878DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 100 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.019 at VGS = 4.5 V 34 Qg (Typ.) 13.6 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • DC/DC Primary Side Switch
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SiR878DP
2002/95/EC
SiR878DP-T1-GE3
18-Jul-08
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Si3932DV
Abstract: No abstract text available
Text: SPICE Device Model Si3932DV Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si3932DV
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si1926DL
2002/95/EC
OT-363
SC-70
Si1926DL-T1-E3
Si1926DL-T1-GEelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Si1958DH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a Qg (Typ.) a 0.205 at VGS = 4.5 V 1.3 0.340 at VGS = 2.5 V 1.3a 1.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si1958DH
2002/95/EC
OT-363
SC-70
Si1958DH-T1-E3
Si1958DH-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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