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    4604 mosfet

    Abstract: 4604 AN609 SiR896DP
    Text: SiR896DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR896DP AN609, 05-Mar-10 4604 mosfet 4604 AN609

    V2770

    Abstract: No abstract text available
    Text: SPICE Device Model SiR896DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR896DP 18-Jul-08 V2770