Untitled
Abstract: No abstract text available
Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times
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BPV11F
BPV11F
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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DIN 7967
Abstract: TEST2600 TSSS2600
Text: TSSS2600 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • • • • • • • • • • • • • 94 8672 DESCRIPTION TSSS2600 is an infrared, 950 nm emitting diode in GaAs technology, molded in a miniature, clear plastic package with
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TSSS2600
TSSS2600
TEST2600
2002/95/EC
11-Mar-11
DIN 7967
TEST2600
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BF998RAW-GS08
Abstract: No abstract text available
Text: Not for new design, this product will be obsoleted soon BF998/BF998R/BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure
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BF998/BF998R/BF998RW
2002/95/EC
2002/96/EC
OT143
OT143R
OT343R
BF998
OT143
18-Jul-08
BF998RAW-GS08
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Untitled
Abstract: No abstract text available
Text: Not for new design, this product will be obsoleted soon S852TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous
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S852TF
OT-490
18-Jul-08
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IRFP250
Abstract: MURB2020CT MURB2020CT-1
Text: MURB2020CTPbF/MURB2020CT-1PbF Vishay High Power Products Ultrafast Rectifier, 2 x 10 A FRED PtTM FEATURES MURB2020CT-1PbF MURB2020CTPbF • Ultrafast recovery time Available • Low forward voltage drop RoHS* • Low leakage current COMPLIANT • 175 °C operating junction temperature
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MURB2020CTPbF/MURB2020CT-1PbF
MURB2020CT-1PbF
MURB2020CTPbF
18-Jul-08
IRFP250
MURB2020CT
MURB2020CT-1
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IRFP250
Abstract: MURB1520 MURB1520-1
Text: MURB1520PbF/MURB1520-1PbF Vishay High Power Products Ultrafast Rectifier, 15 A FRED PtTM FEATURES MURB1520-1PbF MURB1520PbF • Ultrafast recovery time Available • Low forward voltage drop RoHS* • Low leakage current COMPLIANT • 175 °C operating junction temperature
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MURB1520PbF/MURB1520-1PbF
MURB1520-1PbF
MURB1520PbF
18-Jul-08
IRFP250
MURB1520
MURB1520-1
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15ETH03-1
Abstract: 15ETH03S IRFP250
Text: 15ETH03S/15ETH03-1 Vishay High Power Products Hyperfast Rectifier, 15 A FRED PtTM 15ETH03S FEATURES 15ETH03-1 • Hyperfast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature Base cathode 2 2 • Designed and qualified for industrial level
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15ETH03S/15ETH03-1
15ETH03S
15ETH03-1
18-Jul-08
15ETH03-1
15ETH03S
IRFP250
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BPW85
Abstract: BPW85A BPW85B BPW85C Phototransistor bpw 80
Text: BPW85A, BPW85B, BPW85C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW85A,
BPW85B,
BPW85C
2002/95/EC
2002/96/EC
BPW85
11-Mar-11
BPW85A
BPW85B
BPW85C
Phototransistor bpw 80
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TSUS4400
Abstract: 6544
Text: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 18°
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TSUS4400
2002/95/EC
2002/96/EC
TSUS4400
18-Jul-08
6544
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TSAL6100
Abstract: high power infrared led
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power
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TSAL6100
2002/95/EC
2002/96/EC
TSAL6100
18-Jul-08
high power infrared led
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Untitled
Abstract: No abstract text available
Text: 8TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 8 A FEATURES • • • • • • • • • • Base cathode 2 TO-220AC 1 Cathode 3 Anode 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage
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8TT100
O-220AC
11-Mar-11
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BPV11
Abstract: No abstract text available
Text: BPV11 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPV11
2002/95/EC
2002/96/EC
BPV11
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: TSKS5400 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • Peak wavelength: λp = 950 nm • High reliability • High radiant power
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TSKS5400
TSKS5400-FSZ
TEKS5400
2002/d
11-Mar-11
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BPW96
Abstract: BPW96B BPW96C
Text: BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW96B,
BPW96C
2002/95/EC
2002/96/EC
BPW96
11-Mar-11
BPW96B
BPW96C
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING COPYRIGHT IS U N P U B L IS H E D . 2005 3 RELEASED FOR A LL PU B LIC ATIO N RIG HTS 2 - ,- R E V IS IO N S R E S ER V ED . BY TYCO ELECTRONICS CORPORATION. P LTR B R E V IS E D PER D E S C R IP TIO N DATE DWN ECO -08-007327 05SEP08 APVD
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05SEP08
76/cm
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 3 R E LE A S E D FOR PU B LIC A T IO N BY TYCO ELEC TR O N IC S CO RPO RATIO N . 2 - ,- LOC A LL R IG H T S R E S E R V E D . R EVISIO N S D IS T 00 D E S C R IP T IO N AL REVISED PER ECO - 05SEP08
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05SEP08
TERMIN29913-1
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S GP 00 LTR DESCRIPTION C DATE DWN BM WM 05SEP08 REVISED PER E C Q - 08-007327 APVD 1 -THE CONTACT SURFACES OF THE TERMINALS ARE
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ECO-08-007327
05SEP08
76/xm
27/xm
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 THIS 3 DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION 2 - ,- REVISIONS ALL RIGHTS RESERVED. 180° O U T S ID E P S H IE L D LTR J 1 . DESCRIPTION R E VIS E D P ER DATE DWN 05SEP08 EC0-08-007327 APVD BM WM THIS KIT SHIPPED NOT ASSEMBLED.
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05SEP08
EC0-08-007327
76/vm
76/rm
27/zm
-APR-86
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Untitled
Abstract: No abstract text available
Text: 4 3 2 LOC 180° OUTSIDE D IS T R E V IS IO N S 00 SHIELD D E S C R IP T IO N E 1 . THIS R E VIS E D KIT SHIPPED P ER -007327 ECO- 05SEP08 BÏ NOT ASSEMBLED. D ^ MATERIAL: SHIELDS - BRIGHT NICKEL PLATED CARBON STEEL. PLUG HOUSING - POLYPHENYLENE OXIDE, UL94V1 RATED, BLACK.
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05SEP08
UL94V1
76/2m
76/zm
27/xm
CABL25-
17FEB05
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ALL COPYRIGHT - RIG HTS LOC D IS T R E V IS IO N S GP 00 R E S ER V ED . BY TYCO ELECTRONICS CORPORATION. LTR D E S C R IP T IO N C 1 .T H E CONTACT SURFACES COATED WITH DATE DWN BM WM 05SEP08 REVISED PER E C Q - 08-007327
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ECO-08-007327
05SEP08
76/xm
27/xm
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R AW IN G IS U N P U B LIS H E D . RELEASED FOR ALL C O P Y R IG H T BY TYCO 2 3 ELECTRONICS P U B LIC A T IO N R IG H TS - , - LOC D IST RESERVED. REVISIONS 00 CORPORATION. D E S C R IP T IO N E RECEPTACLE D PER ECO- 05SEP08 -007327 APVD BÏ
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05SEP08
22aug2002
26aug2002
31mar2000
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC RESERVED. D IS T R E V IS IO N S 00 C O R P O R A T IO N . D E S C R IP T IO N R E VIS E D •CAPTIVE P A N H E A D
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05SEP08
23SEP2005
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ET6052
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T BY 1T C O E L E C T R O N IC S P U B L IC A T IO N R IG H T S 2 -, - RESERVED. GP C O R P O R A T IO N . R E V IS IO N S 00 D E S C R IP T IO N R E VIS E D BLUE COLOR DOT
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05SEP08
09MAR06
31MAR2000
ET6052
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC D IS T C O R P O R A T IO N . •CAPTIVE P A N H E A D 19 .05[.75] LONG ■4-40 X D E S C R IP T IO N
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EC0-08-007327
05SEP08
310CT09
23SEP2005
23SEP05
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