vskt
Abstract: VSKT152
Text: VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A New INT-A-PAK Power Module FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips
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Original
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VSKT152/04PbF
E78996
2002/95/EC
18-Jul-08
vskt
VSKT152
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PDF
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LH1540
Abstract: LH1540AAB LH1540AABTR LH1540AT dip6 IL-250 LH1540 SSR
Text: LH1540AAB, LH1540AABTR, LH1540AT Vishay Semiconductors 1 Form A Solid State Relay FEATURES S • Current limit protection S' • Isolation test voltage 5300 VRMS S 6 DC S' 5 4 • Typical RON 20 Ω, max. 25 Ω • Load voltage 350 V • Load current 120 mA
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Original
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LH1540AAB,
LH1540AABTR,
LH1540AT
i179031-5
i179041-2
2002/95/EC
2002/96/EC
LH1540
18-Jul-08
LH1540AAB
LH1540AABTR
LH1540AT
dip6 IL-250
LH1540 SSR
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PDF
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E78996 datasheet bridge
Abstract: E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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Original
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GA200TS60UPbF
E78996
2002/95/EC
18-Jul-08
E78996 datasheet bridge
E78996 bridge
Igbt high voltage low current
DC265A
GA200TS60UPBF
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PDF
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Amphenol SMA
Abstract: No abstract text available
Text: REVISIONS 135101-07-XX.XX NOTES: DRAWING NO. 1. 2. PERFORM CONTINUITY & HI-POT TESTING. REV THIRD ANGLE PROJ. PACKAGE INDIVIDUALLY IN HEAT SEALED POLY BAG. DESCRIPTION DATE ECO APPR A RELEASE TO MFG. 04-May-10 - CL B NOTE ADDED 05-Jul-10 2070 KR TAG IN BAG WITH "AMPHENOL CONNEX,135101-07-XX.XX AND DATE CODE".
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Original
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135101-07-XX
04-May-10
05-Jul-10
04-May-10
RG142
/135101-07-XX
Amphenol SMA
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PDF
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Untitled
Abstract: No abstract text available
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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Original
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GB200TS60NPbF
E78996
2002/95/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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Original
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GB200TS60NPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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Original
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GA200TS60UPbF
E78996
2002/95/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: GB150TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 138 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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Original
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GB150TS60NPbF
E78996
2002/95/EC
11-Mar-11
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PDF
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GA100TS60SFPbF
Abstract: No abstract text available
Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery
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Original
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GA100TS60SFPbF
E78996
2002/95/EC
11-Mar-11
GA100TS60SFPbF
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PDF
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Untitled
Abstract: No abstract text available
Text: VSKDU162/12PbF Vishay High Power Products HEXFRED Ultrafast Diodes, 100 A New INT-A-PAK Power Modules FEATURES • Electrically isolated: DBC base plate • Standard JEDEC package • Simplified mechanical designs, rapid assembly • High surge capability
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Original
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VSKDU162/12PbF
E78996
2002/95/EC
11-Mar-11
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PDF
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diode BY 127
Abstract: No abstract text available
Text: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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Original
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GB100TS60NPbF
E78996
2002/95/EC
11-Mar-11
diode BY 127
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PDF
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width50s
Abstract: GA100TS120UPBF
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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Original
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GA100TS120UPbF
E78996
2002/95/EC
11-Mar-11
width50s
GA100TS120UPBF
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PDF
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GA100TS60SFPbF
Abstract: No abstract text available
Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery
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Original
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GA100TS60SFPbF
E78996
2002/95/EC
11-Mar-11
GA100TS60SFPbF
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PDF
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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Original
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GA100TS120UPbF
E78996
2002/95/EC
11-Mar-11
GA100TS120UPBF
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PDF
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E78996 datasheet bridge
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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Original
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GA100TS120UPbF
E78996
2002/95/EC
18-Jul-08
E78996 datasheet bridge
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PDF
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E78996
Abstract: IR E78996 E78996 datasheet vskd INT-A-PAK weight
Text: VSKDU162/12PbF Vishay High Power Products HEXFRED Ultrafast Diodes, 100 A New INT-A-PAK Power Modules FEATURES • Electrically isolated: DBC base plate • Standard JEDEC package • Simplified mechanical designs, rapid assembly • High surge capability
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Original
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VSKDU162/12PbF
E78996
2002/95/EC
18-Jul-08
E78996
IR E78996
E78996 datasheet
vskd
INT-A-PAK weight
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PDF
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LH1535
Abstract: LH1535AAB LH1535AABTR LH1535AT SOLID STATE SWITCH c18750
Text: LH1535AAB, LH1535AABTR, LH1535AT Vishay Semiconductors 1 Form A Solid State Relay FEATURES S • Current limit protection S' • Isolation test voltage 5300 VRMS S 6 DC S' 5 4 • Typical RON 20 Ω, max. 25 Ω • Load voltage 400 V • Load current 120 mA
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Original
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LH1535AAB,
LH1535AABTR,
LH1535AT
i179031-5
i179041-2
2002/95/EC
2002/96/EC
LH1535
18-Jul-08
LH1535AAB
LH1535AABTR
LH1535AT
SOLID STATE SWITCH
c18750
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PDF
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VSKT162
Abstract: 016W vsk162
Text: VSK.136.PbF, VSK.142.PbF, VSK.162.PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage
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Original
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E78996
2002/95/EC
18-Jul-08
VSKT162
016W
vsk162
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PDF
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GA100TS60SFPbF
Abstract: No abstract text available
Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery
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Original
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GA100TS60SFPbF
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
GA100TS60SFPbF
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PDF
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40HFL40S02
Abstract: IRFP460 VSKDS203
Text: VSKDS203/100 Vishay High Power Products ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 100 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL pending • Compliant to RoHS directive 2002/95/EC
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Original
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VSKDS203/100
2002/95/EC
18-Jul-08
40HFL40S02
IRFP460
VSKDS203
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PDF
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LH1500
Abstract: LH1500AAB LH1500AABTR LH1500AT
Text: LH1500AAB, LH1500AABTR, LH1500AT Vishay Semiconductors 1 Form A Solid State Relay FEATURES S • Current limit protection S' • Isolation test voltage 5300 VRMS S 6 DC S' 5 4 • Typical RON 20 Ω • Load voltage 350 V • Load current 150 mA • High surge capability
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Original
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LH1500AAB,
LH1500AABTR,
LH1500AT
i179031-5
i179041-2
2002/95/EC
2002/96/EC
LH1500
18-Jul-08
LH1500AAB
LH1500AABTR
LH1500AT
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PDF
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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Original
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GA100TS120UPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
GA100TS120UPBF
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PDF
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VCS101
Abstract: No abstract text available
Text: VCS101, VCS103, VCS401 Vishay Foil Resistors High Precision Bulk Metal Foil Power Current Sense Resistors with TCR of ± 15 ppm/°C from 0.005 Ω FEATURES • Temperature coefficient of resistance TCR : ± 20 ppm/°C (available to ± 15 ppm/°C) NEW • Resistive tolerance: to ± 0.1 %
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Original
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VCS101,
VCS103,
VCS401
0R123
22-Feb-10
VCS101
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 3 4 5 6 7 A 49,69 ln 47,48 47,23 46,28 ON VJD LO Osl cd R 1, 0 0 x 4 Position 1 n P o s i t i on 34 Osl @ 11 i o JUUUUUUUUUUUUUUUU M AAAAAAAAAAAAJD uL 1,27 5,60 41,91 P o s i t i on 68 o ]d 1,27 P o s i t i on 35 OsJ '-d’ 3,30 2,345 41,91 COVER ONE
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OCR Scan
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D2-JUNE-08
EC01757
04-MAY-10
EC01730
28-APR-10
28-JUL-08
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PDF
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