GA200TS60UPBF Search Results

GA200TS60UPBF Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GA200TS60UPBF		International Rectifier	TRANS IGBT MODULE N-CH 600V 200A 11INT-A-PAK		Original	PDF

GA200TS60UPBF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
E78996 datasheet bridge Abstract: E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	GA200TS60UPbF E78996 2002/95/EC 18-Jul-08 E78996 datasheet bridge E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF	PDF
Untitled Abstract: No abstract text available Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	GA200TS60UPbF E78996 2002/95/EC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT • Very low conduction and switching losses	Original	GA200TS60UPbF 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode	Original	GA200TS60UPbF 12-Mar-07	PDF
Untitled Abstract: No abstract text available Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	GA200TS60UPbF E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode	Original	GA200TS60UPbF 12-Mar-07	PDF
200A25 Abstract: No abstract text available Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT • Very low conduction and switching losses	Original	GA200TS60UPbF 18-Jul-08 200A25	PDF
E78996 diode Abstract: No abstract text available Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	GA200TS60UPbF E78996 2002/95/EC 11-Mar-11 E78996 diode	PDF
Untitled Abstract: No abstract text available Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	GA200TS60UPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF