PFRR
Abstract: No abstract text available
Text: PFRR www.vishay.com ESCC Vishay 4001/023 Qualified R Failure Rate High Precision (10 ppm/°C, 0.05 %) Thin Film Chip Resistors FEATURES • Load life stability at ± 70 °C for 2000 h: 0.25 % under Pr • Temperature coefficient to: 10 ppm/°C • Very low noise (< - 35 dB) and voltage coefficient
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
PFRR
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vskt
Abstract: VSKT152
Text: VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A New INT-A-PAK Power Module FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips
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VSKT152/04PbF
E78996
2002/95/EC
18-Jul-08
vskt
VSKT152
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LH1540
Abstract: LH1540AAB LH1540AABTR LH1540AT dip6 IL-250 LH1540 SSR
Text: LH1540AAB, LH1540AABTR, LH1540AT Vishay Semiconductors 1 Form A Solid State Relay FEATURES S • Current limit protection S' • Isolation test voltage 5300 VRMS S 6 DC S' 5 4 • Typical RON 20 Ω, max. 25 Ω • Load voltage 350 V • Load current 120 mA
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LH1540AAB,
LH1540AABTR,
LH1540AT
i179031-5
i179041-2
2002/95/EC
2002/96/EC
LH1540
18-Jul-08
LH1540AAB
LH1540AABTR
LH1540AT
dip6 IL-250
LH1540 SSR
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AR3PM
Abstract: No abstract text available
Text: New Product AR3PK, AR3PM Vishay General Semiconductor Fast Switching Avalanche Surface Mount Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Glass passivated chip junction • Fast reverse recovery time
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O-277A
J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
AR3PM
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E78996 datasheet bridge
Abstract: E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA200TS60UPbF
E78996
2002/95/EC
18-Jul-08
E78996 datasheet bridge
E78996 bridge
Igbt high voltage low current
DC265A
GA200TS60UPBF
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Untitled
Abstract: No abstract text available
Text: NTCC100E4 Vishay BCcomponents NTC Thermistors, Naked Chips FEATURES QUICK REFERENCE DATA PARAMETER Resistance value at 25 °C R25 Tolerance on R25-value B25/85-value Tolerance on B25/85-value Operating temperature range: At zero dissipation (continuously)
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NTCC100E4
2002/95/EC
2002/96/EC
R25-value
B25/85-value
40/125/56hay
11-Mar-11
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Amphenol SMA
Abstract: No abstract text available
Text: REVISIONS 135101-07-XX.XX NOTES: DRAWING NO. 1. 2. PERFORM CONTINUITY & HI-POT TESTING. REV THIRD ANGLE PROJ. PACKAGE INDIVIDUALLY IN HEAT SEALED POLY BAG. DESCRIPTION DATE ECO APPR A RELEASE TO MFG. 04-May-10 - CL B NOTE ADDED 05-Jul-10 2070 KR TAG IN BAG WITH "AMPHENOL CONNEX,135101-07-XX.XX AND DATE CODE".
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135101-07-XX
04-May-10
05-Jul-10
04-May-10
RG142
/135101-07-XX
Amphenol SMA
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Untitled
Abstract: No abstract text available
Text: HLW, NHLW www.vishay.com Vishay Dale Wirewound Resistors, Industrial Power, Tubular FEATURES • High temperature silicon coating • Complete welded construction • Excellent for intermittent power and pulsing applications • Available in non-inductive styles model
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HLW03
NHLW03
HLW05
NHLW05
HLW06
NHLW06
HLW10
NHLW10
HLW12
NHLW12
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Untitled
Abstract: No abstract text available
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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GB200TS60NPbF
E78996
2002/95/EC
11-Mar-11
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AU2PD
Abstract: No abstract text available
Text: New Product AU2PD, AU2PG, AU2PJ Vishay General Semiconductor Ultrafast Avalanche Surface Mount Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Glass passivated chip junction • Fast reverse recovery time
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PDF
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J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
O-277A
11-Mar-11
AU2PD
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Untitled
Abstract: No abstract text available
Text: BAW56-V-G Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
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BAW56-V-G
AEC-Q101
2002/95/EC
2002/96/EC
OT-23
18/10K
10K/box
08/3K
15K/box
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Technical Note TN-0004
Abstract: No abstract text available
Text: VISHAY www.vishay.com Tantalum Capacitors Technical Note TN-0004 Guidelines for Replacing Tantalum Capacitors Using a Soldering Iron Printed circuit boards to which no manual repairs have been made are proven to pass testing processes with more success and
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TN-0004
04-May-15
Technical Note TN-0004
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SIHA18N60E-E3
Abstract: No abstract text available
Text: SiHA18N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) typ. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.176 92 Qgs (nC) 10 Qgd (nC) 18
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SiHA18N60E
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SIHA18N60E-E3
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202D667X0075A5
Abstract: No abstract text available
Text: 200D, 202D www.vishay.com Vishay Wet Tantalum Capacitors, Wet Sintered Anode TANTALEX Components TANTAPAK® Capacitor Assemblies FEATURES • Assembly of silver case capacitors • 200D, case negative, 5 “A” case codes • 202D - Both terminations isolated from case, 13 case codes
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MIL-DTL-3965
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
202D667X0075A5
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Untitled
Abstract: No abstract text available
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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GB200TS60NPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA200TS60UPbF
E78996
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: GB150TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 138 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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GB150TS60NPbF
E78996
2002/95/EC
11-Mar-11
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GA100TS60SFPbF
Abstract: No abstract text available
Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery
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GA100TS60SFPbF
E78996
2002/95/EC
11-Mar-11
GA100TS60SFPbF
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Untitled
Abstract: No abstract text available
Text: VSKDU162/12PbF Vishay High Power Products HEXFRED Ultrafast Diodes, 100 A New INT-A-PAK Power Modules FEATURES • Electrically isolated: DBC base plate • Standard JEDEC package • Simplified mechanical designs, rapid assembly • High surge capability
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VSKDU162/12PbF
E78996
2002/95/EC
11-Mar-11
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diode BY 127
Abstract: No abstract text available
Text: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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GB100TS60NPbF
E78996
2002/95/EC
11-Mar-11
diode BY 127
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width50s
Abstract: GA100TS120UPBF
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA100TS120UPbF
E78996
2002/95/EC
11-Mar-11
width50s
GA100TS120UPBF
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b12 marking
Abstract: 50K Linear Taper Potentiometer
Text: PRV6 www.vishay.com Vishay Sfernice Fully Sealed Potentiometer Cermet or Conductive Plastic FEATURES • • • • • • • • • PRV6S high power rating 1.5 W at 70 °C cermet PRV6A 0.75 W at 70 °C (conductive plastic) Tests according to CECC 41000 or IEC 60393-1
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
b12 marking
50K Linear Taper Potentiometer
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0MIH-SH-112LM
Abstract: OMIH-SH-105LM 0MIH-SH-112DM SH-112Dm 0MIH-SH-118LM 124lm
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . REUEASED FO R AUU C O P Y R IG H T By 2 3 P U B U IC A T IO N R IG H TS REVISIO NS RESERVED. H - LTR C1 © D E S C R IP T IO N RE VISED PER DATE E C O - 1 1- 00 51 40 DWN A PVD RK HMR 04MAY11 PART A PART B
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6A/45A
240Vr
04MAY11
0MIH-SH-112LM
OMIH-SH-105LM
0MIH-SH-112DM
SH-112Dm
0MIH-SH-118LM
124lm
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pc-gf-20
Abstract: No abstract text available
Text: R E L E A S E D F Ô R P U B LIC A T IO N - THIS D RAW ING IS UNPUBLISHED. VERTRAU LICH E U N V ERO EFFEN TLICH TE ZEICH N UN G FREI FUER V ERO EFFEN TLICH U N G i REVISIONS M ATED W ITH: PASSEN D ZU: A L L RIGHTS RESERVED. A LLE RECHTE VO RBEHALTEN
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EGGMN04414
ECO-11-004886
04MAY1
PC-GF20
27JUN96
M3X10
pc-gf-20
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