Untitled
Abstract: No abstract text available
Text: ST10F272M 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM Datasheet − production data Features • ■ ■ 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator
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ST10F272M
16-bit
16-bit
40-bit
32-bit
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FBGA63
Abstract: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
NAND512W4A2C
byte/264
TSOP48
VFBGA55
VFBGA63
FBGA63
NAND512R4A2C
NAND512W4A2C
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6414a
Abstract: st10 Bootstrap AN23 LQFP144 PQFP144 ST10 ST10F272E ST10F272M 3170B
Text: ST10F272M 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM Features • ■ ■ 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator – Enhanced boolean bit manipulations
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ST10F272M
16-bit
16-bit
40-bit
32-bit
6414a
st10 Bootstrap
AN23
LQFP144
PQFP144
ST10
ST10F272E
ST10F272M
3170B
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6206a
Abstract: stmicroelectronics "serial eeprom" st10 Bootstrap ST10F272MR
Text: ST10F272M 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM Datasheet − production data Features • ■ ■ 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator
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ST10F272M
16-bit
40-bit
32-bit
6206a
stmicroelectronics "serial eeprom"
st10 Bootstrap
ST10F272MR
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LGA52
Abstract: LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258
Text: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage
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NAND08GW3C2A
NAND16GW3C4A
LGA52
LGA-52
NAND16GW3C4A
NAND08GW3C2A
16G nand
JESD97
NAND16GW3
NS4258
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mosfet 4805
Abstract: 24nk55 24NK55Z JESD97 STW24NK55Z
Text: STW24NK55Z N-channel 550 V - 0.18 Ω - 23 A - TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STW24NK55Z 550 V <0.22 Ω 23 A 285 W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■
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STW24NK55Z
O-247
mosfet 4805
24nk55
24NK55Z
JESD97
STW24NK55Z
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Untitled
Abstract: No abstract text available
Text: ST10F272M 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM Datasheet − production data Features • ■ ■ 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator
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ST10F272M
16-bit
16-bit
40-bit
32-bit
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Endpoint
Abstract: ST72651 ST72652 ST662A ST7265 ST7SCR
Text: UM0463 User manual ST7 full-speed USB library Introduction The "ST7 Full-Speed USB Library" hereafter "the library" is designed for ST7 full-speed USB products. With the library, the user of the ST7265 and ST7SCR will have easy access to the embedded USB cell. The library is provided with full source code and it can be used
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UM0463
ST7265
Endpoint
ST72651
ST72652
ST662A
ST7SCR
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Numonyx
Abstract: NAND01GWxA2B-KGD NAND01GW3A2B-KGD NAND01GW4A2B-KGD AI07587 NAND01G AI13144
Text: NAND01GW3A2B-KGD NAND01GW4A2B-KGD Known Good Die, 1 Gbit x 8/x 16 , 528 Byte/264 word page, 3 V, NAND Flash memory Features • High density NAND Flash memory – 1 Gbit memory array – 32 Mbit spare area – Cost effective solutions for mass storage applications
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NAND01GW3A2B-KGD
NAND01GW4A2B-KGD
Byte/264
Numonyx
NAND01GWxA2B-KGD
NAND01GW3A2B-KGD
NAND01GW4A2B-KGD
AI07587
NAND01G
AI13144
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Untitled
Abstract: No abstract text available
Text: STW24NK55Z N-channel 550 V - 0.18 Ω - 23 A - TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STW24NK55Z 550 V <0.22 Ω 23 A 285 W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■
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STW24NK55Z
O-247
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISH ED. R E l Ea S K TÔR P u B l i ì a Tìò n - BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC DIST R E V IS IO N S J AU" RIGHTS R ESER V E D - LTR DESCRIPTION REVISED DATE ECR—0 8 —001 4 23 DWN APVD J.S S.M
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OCR Scan
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PDF
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17JAN2008
04JAN2008
P/N1721B4
31MAR2000
QH172133
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