APT42F50B
Abstract: APT42F50S MIC4452 43A 013
Text: APT42F50B APT42F50S 600V, 43A, 0.13Ω Max trr ≤260ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT42F50B
APT42F50S
260ns
APT42F50B
APT42F50S
MIC4452
43A 013
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8114
Abstract: APT12M80B APT12M80S MIC4452
Text: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT12M80B
APT12M80S
8114
APT12M80B
APT12M80S
MIC4452
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APT9M100B
Abstract: APT9M100S MIC4452
Text: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT9M100B
APT9M100S
APT9M100B
APT9M100S
MIC4452
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APT17F80B
Abstract: APT17F80S MIC4452
Text: APT17F80B APT17F80S 800V, 18A, 0.58Ω Max, trr ≤250ns N-Channel FREDFET TO -2 POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT17F80B
APT17F80S
250ns
APT17F80B
APT17F80S
MIC4452
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APT23F60B
Abstract: APT23F60S MIC4452
Text: APT23F60B APT23F60S 600V, 24A, 0.29Ω Max, trr ≤220ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT23F60B
APT23F60S
220ns
APT23F60B
APT23F60S
MIC4452
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APT58M80J
Abstract: MIC4452
Text: APT58M80J 800V, 60A, 0.10Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT58M80J
E145592
APT58M80J
MIC4452
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APT4M120K
Abstract: MIC4452
Text: APT4M120K 1200V, 5A, 3.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT4M120K
O-220
APT4M120K
MIC4452
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LAN9514
Abstract: usb eeprom programmer schematic "embedded systems" ethernet protocol LAN9514-JZX ethernet hub "4 port" passive hub 100Mbs ethernet lan9514 ethernet usb hub low cost eeprom programmer circuit diagram
Text: LAN9514/LAN9514i USB 2.0 Hub and 10/100 Ethernet Controller PRODUCT FEATURES Datasheet Highlights — — — — — — — — — — Fully compliant with IEEE802.3/802.3u Integrated Ethernet MAC and PHY 10BASE-T and 100BASE-TX support Full- and half-duplex support with flow control
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LAN9514/LAN9514i
LAN9514
usb eeprom programmer schematic
"embedded systems" ethernet protocol
LAN9514-JZX
ethernet hub
"4 port" passive hub
100Mbs
ethernet lan9514
ethernet usb hub
low cost eeprom programmer circuit diagram
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Untitled
Abstract: No abstract text available
Text: APT8M80K 800V, 8A, 1.35Ω MAX, N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT8M80K
O-220
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APT14M120B
Abstract: APT14M120S MIC4452
Text: APT14M120B APT14M120S 1200V, 14A, 1.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT14M120B
APT14M120S
APT14M120B
APT14M120S
MIC4452
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MOSFET 600v 60a
Abstract: 100V 60A Mosfet APT80M60J MIC4452
Text: APT80M60J 600V, 84A, 0.055Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT80M60J
E145592
MOSFET 600v 60a
100V 60A Mosfet
APT80M60J
MIC4452
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APT66M60B2
Abstract: APT66M60L MIC4452
Text: APT66M60B2 APT66M60L 600V, 70A, 0.09Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT66M60B2
APT66M60L
O-264
O-247
APT66M60B2
APT66M60L
MIC4452
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APT22F120B2
Abstract: APT22F120L MIC4452
Text: APT22F120B2 APT22F120L 1200V, 23A, 0.70Ω Max, trr ≤270ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT22F120B2
APT22F120L
270ns
O-264
APT25
O-247
APT22F120B2
APT22F120L
MIC4452
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APT19M120J
Abstract: MIC4452
Text: APT19M120J 1200V, 19A, 0.53Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT19M120J
E145592
APT19M120J
MIC4452
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APT30F60J
Abstract: MIC4452
Text: APT30F60J 600V, 31A, 0.15Ω Max, trr ≤270ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT30F60J
270ns
APT30F60J
MIC4452
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APT7F120B
Abstract: APT7F120S MIC4452 DIODE 240v 3a
Text: APT7F120B APT7F120S 1200V, 7A, 2.4Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT7F120B
APT7F120S
190ns
APT7F120B
APT7F120S
MIC4452
DIODE 240v 3a
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APT21M100J
Abstract: MIC4452 NS 301
Text: APT21M100J 1000V, 21A, 0.38Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT21M100J
E145592
APT21M100J
MIC4452
NS 301
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APT28M120B2
Abstract: APT28M120L MIC4452
Text: APT28M120B2 APT28M120L 1200V, 29A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT28M120B2
APT28M120L
O-264
O-247
APT28M120B2
APT28M120L
MIC4452
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APT43F60B2
Abstract: APT43F60L MIC4452
Text: APT43F60B2 APT43F60L 600V, 45A, 0.15Ω Max, trr ≤270ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT43F60B2
APT43F60L
270ns
O-264
APT43F609
O-247
APT43F60B2
APT43F60L
MIC4452
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APT56M60B2
Abstract: APT56M60L MIC4452
Text: APT56M60B2 APT56M60L 600V, 60A, 0.11Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT56M60B2
APT56M60L
O-264
O-247
APT56M60B2
APT56M60L
MIC4452
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psdv-0505elf
Abstract: fuse smd H psdv-0512elf smd voltage regulator 8pin dc psdv-0512 PSDV-1205ELF
Text: PSDV-xxxxELF Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070 www.peak-electronics.de peak@peak-electronics.de PSD-SERIES Rev.04-2009 0.25 Watt Unregulated Single Output SMD Case 1 kV DC I/O Isolation Low Ripple and Noise
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D-55299
1000VDC
psdv-0505elf
fuse smd H
psdv-0512elf
smd voltage regulator 8pin dc
psdv-0512
PSDV-1205ELF
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LAN9512
Abstract: LAN9512I LAN9512-JZX 93C46 programmer usb VDD18ETHPLL
Text: LAN9512/LAN9512i USB 2.0 Hub and 10/100 Ethernet Controller PRODUCT FEATURES Datasheet Highlights — — — — — — — — — — Fully compliant with IEEE802.3/802.3u Integrated Ethernet MAC and PHY 10BASE-T and 100BASE-TX support Full- and half-duplex support with flow control
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LAN9512/LAN9512i
IEEE802
10BASE-T
100BASE-TX
32-bit
48-bit
LAN9512
LAN9512I
LAN9512-JZX
93C46 programmer usb
VDD18ETHPLL
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Untitled
Abstract: No abstract text available
Text: APT56F60B2 APT56F60L 600V, 60A, 0.11Ω Max, trr ≤290ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT56F60B2
APT56F60L
290ns
O-264
O-247
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Untitled
Abstract: No abstract text available
Text: LAN9512/LAN9512i USB 2.0 Hub and 10/100 Ethernet Controller PRODUCT FEATURES Datasheet Highlights ̈ ̈ — — — — — — — — — — Fully compliant with IEEE802.3/802.3u Integrated Ethernet MAC and PHY 10BASE-T and 100BASE-TX support Full- and half-duplex support with flow control
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LAN9512/LAN9512i
IEEE802
10BASE-T
100BASE-TX
32-bit
48-bit
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