Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    APT28M120L Search Results

    APT28M120L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT28M120L Microsemi N-Channel MOSFET Original PDF

    APT28M120L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT28M120B2 APT28M120L 1200V, 29A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT28M120B2 APT28M120L O-264 O-247

    APT28M120B2

    Abstract: APT28M120L MIC4452
    Text: APT28M120B2 APT28M120L 1200V, 29A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT28M120B2 APT28M120L O-264 O-247 APT28M120B2 APT28M120L MIC4452

    APT28M120B2

    Abstract: APT28M120L MIC4452 microsemi mosfet APT28M120B2
    Text: APT28M120B2 APT28M120L 1200V, 28A, 0.56Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT28M120B2 APT28M120L O-264 O-247 APT28M120B2 APT28M120L MIC4452 microsemi mosfet APT28M120B2

    Untitled

    Abstract: No abstract text available
    Text: APT28M120B2 APT28M120L 1200V, 29A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT28M120B2 APT28M120L O-264 O-247

    fast diode SOT-227

    Abstract: N-channel MOSFET to-247 FREDFETs TO-264 TO247 APT17F120J TO-247 APT44F80L to264
    Text: TM Power MOS 8 is a new family of high speed, high voltage N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These new MOSFETs /FREDFETs have been optimized for both hard and soft switching in high frequency, high voltage applications rated above


    Original
    PDF APT84M50L APT58M50J APT100M50J APT34F60B O-247 O-264 OT-227 fast diode SOT-227 N-channel MOSFET to-247 FREDFETs TO-264 TO247 APT17F120J TO-247 APT44F80L to264