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    APT14M120S Datasheets (1)

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    APT14M120S Microsemi N-Channel MOSFET Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: APT14M120B APT14M120S 1200V, 14A, 1.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT14M120B APT14M120S

    APT14M120B

    Abstract: APT14M120S MIC4452 Microsemi MOSFET 1200V
    Text: APT14M120B APT14M120S 1200V, 14A, 1.20Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT14M120B APT14M120S APT14M120B APT14M120S MIC4452 Microsemi MOSFET 1200V

    APT14M120B

    Abstract: APT14M120S MIC4452
    Text: APT14M120B APT14M120S 1200V, 14A, 1.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT14M120B APT14M120S APT14M120B APT14M120S MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT14M120B APT14M120S 1200V, 14A, 1.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT14M120B APT14M120S