APT25GP120B
Abstract: IC 7411 T0-247
Text: APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,
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APT25GP120B
O-247
APT25GP120B
IC 7411
T0-247
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IC 7411 DATA SHEET
Abstract: IC 7411 APT25GP120B T0-247
Text: APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,
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APT25GP120B
O-247
IC 7411 DATA SHEET
IC 7411
APT25GP120B
T0-247
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Untitled
Abstract: No abstract text available
Text: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT25GP90BDF1
O-247
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APT25GLQ120JCU2
Abstract: No abstract text available
Text: APT25GLQ120JCU2 ISOTOP Boost chopper Trench + Field Stop fast IGBT4 Power module VCES = 1200V IC = 25A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K C G Features • Trench + Field Stop Fast IGBT 4 Technology
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APT25GLQ120JCU2
OT-227)
APT25GLQ120JCU2
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APT25GR120B
Abstract: No abstract text available
Text: APT25GR120B_S APT25GR120B APT25GR120S 1200V, 25A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT (B) TO The Ultra Fast NPT - IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between
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APT25GR120B
APT25GR120S
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APT25GN120SG
Abstract: energy 3000 ups APT25GN120B APT25GN120BG APT25GN120S MIC4452 APT30DQ120
Text: TYPICAL PERFORMANCE CURVES 1200V APT25GN120B_S G APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum
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APT25GN120B
APT25GN120S
APT25GN120BG*
APT25GN120SG*
APT25GN120SG
energy 3000 ups
APT25GN120B
APT25GN120BG
APT25GN120S
MIC4452
APT30DQ120
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Untitled
Abstract: No abstract text available
Text: APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,
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APT25GP120B
O-247
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MOSFET 25A 600V
Abstract: APT25GP120BDF1 T0-247 IC-125A mosfet 1200V 25A
Text: APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power
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APT25GP120BDF1
O-247
MOSFET 25A 600V
APT25GP120BDF1
T0-247
IC-125A
mosfet 1200V 25A
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Untitled
Abstract: No abstract text available
Text: APT25GN120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design
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APT25GN120B2DQ2
APT25GN120B2DQ2
APT25GN120B2DQ2G*
Resis31
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Untitled
Abstract: No abstract text available
Text: APT25GF120JCU2 ISOTOP Boost chopper NPT IGBT SiC chopper diode VCES = 1200V IC = 25A @ Tc = 90°C Application • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Brake switch K C Features Non Punch Through NPT Fast IGBT
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APT25GF120JCU2
OT-227)
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Untitled
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT25GT120BRDL G 1200V APT25GT120BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT TO The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior
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APT25GT120BRDL
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APT25GT120SRG
Abstract: No abstract text available
Text: 1200V APT25GT120BR G APT25GT120BR APT25GT120BRG* APT25GT120SR APT25GT120SRG* TYPICAL PERFORMANCE CURVES *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT TO -2 47 D3PAK The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
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APT25GT120BR
APT25GT120BRG*
APT25GT120SR
APT25GT120SRG*
50KHz
APT25GT120SRG
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D-6020
Abstract: APT25GP90B T0-247
Text: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT25GP90B
O-247
D-6020
APT25GP90B
T0-247
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Untitled
Abstract: No abstract text available
Text: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT25GP90BDF1
O-247
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APT25GT120BRDQ2G
Abstract: No abstract text available
Text: APT25GT120BRDQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GT120BRDQ2 APT25GT120BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
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APT25GT120BRDQ2
APT25GT120BRDQ2G*
50KHz
APT25GT120BRDQ2G
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Untitled
Abstract: No abstract text available
Text: APT25GF120JCU2 ISOTOP Boost chopper NPT IGBT SiC chopper diode VCES = 1200V IC = 25A @ Tc = 90°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K C Features • Non Punch Through NPT Fast IGBT
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APT25GF120JCU2
OT-227)
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Untitled
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT25GT120BR G 1200V APT25GT120BR APT25GT120BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT25GT120BR
APT25GT120BR
APT25GT120BRG*
50KHz
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APT25GP90BDF1
Abstract: T0-247 T0247 package NF 833
Text: APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT25GP90BDF1
O-247
APT25GP90BDF1
T0-247
T0247 package
NF 833
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Untitled
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES 1200V APT25GN120B_S G APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum
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APT25GN120B
APT25GN120S
APT25GN120BG*
APT25GN120SG*
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Untitled
Abstract: No abstract text available
Text: APT25M100J 1000V, 25A, 0.33Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT25M100J
E145592
APT25M100J
OT-227
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25GP120BDF1
Abstract: APT25GP120BDF1 IC 7416 T0-247 25GP120BD 25gp120
Text: APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,
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APT25GP120BDF1
O-247
25GP120BDF1
APT25GP120BDF1
IC 7416
T0-247
25GP120BD
25gp120
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Untitled
Abstract: No abstract text available
Text: APT25GR120B_SDU15 APT25GR120BDU15 APT25GR120SDU15 1200V, 25A, VCE on = 2.5V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode (B) The Ultra Fast 1200V NPT-IGBT family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between
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SDU15
APT25GR120BDU15
APT25GR120SDU15
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APT25GP120BDQ1
Abstract: APT25GP120BDQ1G 600V 25A Ultrafast Diode 600V 25A Ultrafast Diode APT APT10078BLL
Text: APT25GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT25GP120BDQ1 APT25GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT25GP120BDQ1
APT25GP120BDQ1
APT25GP120BDQ1G*
APT25GP120BDQ1G
600V 25A Ultrafast Diode
600V 25A Ultrafast Diode APT
APT10078BLL
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APT25GF100BN
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY blE D • □ 2 5 7 t30ci ÚQDOÓñb 10^ « A V P A D V A N C E D P o w er Te c h n o l o g y APT25GF100BN 1000V 25A POWER MOS IV IGBT N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS
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APT25GF100BN
APT25GF100BN
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