Untitled
Abstract: No abstract text available
Text: NON-ISOLATED DC/DC CONVERTERS 4.5 Vdc - 32 Vdc Input 1.2 Vdc - 5.0 Vdc/3 A Output xRAH-03Hxx0 Series • • • • • RoHS Compliant Non-Isolated High Efficiency High Power Density Excellent Thermal Performance UL60950-1 Recognized UL/cUL • • •
|
Original
|
PDF
|
xRAH-03Hxx0
UL60950-1
|
SRAH-03H500
Abstract: 03H3 vrah03h500 vrah-03h500
Text: NON-ISOLATED DC/DC CONVERTERS 4.5 Vdc - 32 Vdc Input 1.2 Vdc - 5.0 Vdc/3 A Output xRAH-03Hxx0 Series • • • • • RoHS Compliant Non-Isolated High Efficiency High Power Density Excellent Thermal Performance UL60950-1 Recognized UL/cUL • • •
|
Original
|
PDF
|
xRAH-03Hxx0
UL60950-1
SRAH-03H500
03H3
vrah03h500
vrah-03h500
|
Untitled
Abstract: No abstract text available
Text: WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 125, 140, 150, 200, 250, 300ns Page Write Cycle Time 10ms Max. JEDEC Approved Packages Data Polling for End of Write Detection Hardware and Software Data Protection
|
Original
|
PDF
|
WME128K8-XXX
128Kx8
300ns
MIL-STD-883
|
Untitled
Abstract: No abstract text available
Text: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES Access Times of 125 and 150ns Automatic Page Write Operation MIL-STD-883 Compliant Devices Available Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection
|
Original
|
PDF
|
WE32K32-XXX
32Kx32
150ns
MIL-STD-883
66-pin,
120ns
125ns
|
Untitled
Abstract: No abstract text available
Text: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES Access Times of 125 and 150ns Automatic Page Write Operation MIL-STD-883 Compliant Devices Available Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection
|
Original
|
PDF
|
WE32K32-XXX
32Kx32
150ns
MIL-STD-883
66-pin,
120ns
125ns
MIL-PRF-38534
|
WME128K8-XXX
Abstract: No abstract text available
Text: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 120, 140, 150, 200, 250, 300ns Automatic Page Write Operation JEDEC Approved Packages • Internal Control Timer • 32 pin, Hermetic Ceramic, 0.600" DIP
|
Original
|
PDF
|
WME128K8-XXX
128Kx8
300ns
MIL-STD-883
120ns
06HYX
01HXX
250ns
02HXX
WME128K8-XXX
|
Untitled
Abstract: No abstract text available
Text: WMS128K8-XXX HI-RELIABILITY PRODUCT 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 pending FEATURES • Access Times 70, 85, 100, 120ns ■ Commercial, Industrial and Military Temperature Range ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved • 32 lead Ceramic SOJ (Package 101)
|
Original
|
PDF
|
WMS128K8-XXX
128Kx8
120ns
MIL-STD-883
01HUX*
02HUX*
03HUX*
04HUX*
01HTX*
02HTX*
|
Untitled
Abstract: No abstract text available
Text: a WMF512K8-XXX5 WHITE /MICROELECTRONICS 512Kx8 MONOLITHIC FLASH, SM D 5962-96692 FEATURES • A ccess Tim es of 70, 90, 120, 150ns ■ Organized as 512Kx8 ■ Packaging • 32 pin, Herm etic Ceramic, 0.600" DIP Package 300 • 3 2 lead, Herm etic Ceram ic, 0.400" S O J (Package 101)
|
OCR Scan
|
PDF
|
WMF512K8-XXX5
512Kx8
150ns
512Kx8
64KByte
|
Untitled
Abstract: No abstract text available
Text: WE32K32-XXX M/HITE /M ICROELECTRONICS 32Kx32 EEPROM MODULE, S M D 5962-94614 FEATURES • A c c e s s T im e s o f 9 0 ,1 2 0 ,1 50ns ■ C o m m ercial, Ind ustrial and M ilita ry Tem perature Ranges ■ M IL-STD -883 Com pliant D e vice s A va ila b le ■ A u to m atic Page W rite Operation
|
OCR Scan
|
PDF
|
WE32K32-XXX
32Kx32
66-pin,
28Kx8
64Kx16
128Kx8
150ns
120ns
01HXX
02HXX
|
Untitled
Abstract: No abstract text available
Text: WMF512K8-XXX5 WHITE /M IC R O E L E C T R O N IC S 512 Kx 8 MONOLITHIC FLASH PRELIM IN ARY* FEATURES • Organized as 512Kx8 ■ Access Times of 70, 9 0 ,1 2 0 and 150nS ■ Com m ercial, Industrial and M ilitary Tem perature Ranges ■ Packaging • 32 pin, Hermetic Ceram ic, 0.600" DIP Package 300
|
OCR Scan
|
PDF
|
WMF512K8-XXX5
150nS
512Kx8
01HXX
03HXX
04HXX
01HYX
03HYX
|
Untitled
Abstract: No abstract text available
Text: WMF512K8-XXX5 WHITE /MICROELECTRONICS 512Kx8 MONOLITHIC FLASH, SMD 5962-96692 PRELIMINARY* FEATURES • A c c e s s T i m e s o f 7 0, 90, 1 20 a n d 150n S ■ C o m m e r c ia l , In d u s tr ia l a n d M i l i t a r y T e m p e r a t u r e R a ng e s ■
|
OCR Scan
|
PDF
|
WMF512K8-XXX5
512Kx8
64KByte
120nS
03HXX
04HXX
150nS
|
Untitled
Abstract: No abstract text available
Text: WHITE /M IC R O E L E C T R O N IC S W M S 2 5 6 K 1 6 -X X X 256Kx16 MONOLITHIC SRAM FEATURES • A ccess Times 17, 20, 25, 35ns Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Compliant Devices Available 2V Minim um Data Retention for battery back up operation
|
OCR Scan
|
PDF
|
256Kx16
MIL-STD-883
256Kx16
WMS256K16-XXX
AO-17
256Kx
01HXX*
02HXX*
03HXX*
|
Untitled
Abstract: No abstract text available
Text: HHITE /M ICRO ELECTRONICS W MF128K8-XXX5 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • Access Tim es of 60, 70, 9 0 ,1 2 0 ,150ns ■ Organized as 128Kx8 ■ Packaging ■ Commercial, Industrial and M ilita ry Tem perature Ranges • 32 lead, Hermetic Ceramic, 0.400" S O J Package 101
|
OCR Scan
|
PDF
|
MF128K8-XXX5
128Kx8
150ns
128Kx8
16KByte
04HXX
05HXX
|
Untitled
Abstract: No abstract text available
Text: t t W MS256K16-XDLX WHITE / M I C R O E L E C T R O N I C S 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 pending PRELIMINARY * FEATURES • Access Times 17, 20, 25, 35nS Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Com pliant Devices A vaila b le 2V M inim um Data Retention for battery back up operation
|
OCR Scan
|
PDF
|
MS256K16-XDLX
256Kx16
MIL-STD-883
256Kx16
256K16
01HXX'
03HXX'
256KX
|
|
|
Untitled
Abstract: No abstract text available
Text: TT WHITE /M IC R O E LE C TR O N IC S 512Kx8 17151881 W MS512K8-XXX SRAM FEATURES • A c c e s s T im e s 70, 85, 100 and 120nS C o m m e r c ia l, In d u s tr ia l a nd M i l i t a r y T e m p e r a t u r e Range ■ M IL - S T D - 8 8 3 C o m p l ia n t D e v ic e s A v a i l a b l e ,
|
OCR Scan
|
PDF
|
MS512K8-XXX
512Kx8
120nS
03HXX*
04HXX*
120nS
10OnS
01HYX*
03HYX*
|
Untitled
Abstract: No abstract text available
Text: VZÀ WF128K32-XXX l/MHITE / M I C R O E L E C T R O N I C S 128Kx3212V FLASH MODULE, SMD 5962-94610 FEATURES • Access Tim es of 1ZD, 150 and 200nS ■ Organized as 128Kx32 ■ Packaging ■ Commercial, Industrial and M ilita ry T e m p e ra tu re Ranges
|
OCR Scan
|
PDF
|
WF128K32-XXX
128Kx3212V
200nS
128Kx32
200nS
150nS
120nS
5962-9461002H
03HXX
|
Untitled
Abstract: No abstract text available
Text: T7 512Kx32 SRAM MODULE P R E L IM IN A R Y * FEATURES • ■ WS512K32-XXX M/HITE /M IC R O E LE C TR O N IC S ■ O r g a n i z e d a s 5 1 2 K x 3 2 , U s e r C o n f i g u r a b l e as 1 0 2 4 K x 1 6 o r 2M x8 ■ C o m m e rc ia l, In d u s tria l an d M ilit a r y T e m p e ra tu re R anges
|
OCR Scan
|
PDF
|
WS512K32-XXX
512Kx32
120nS
100nS
01HXX*
02HXX*
03HXX*
|
Untitled
Abstract: No abstract text available
Text: T T WS512K8-XCX WHITE /M IC R O E L E C T R O N IC S 512Kx8 SRAM MODULE FEATURES FIG. 1 • Access Tim es 55 to 120nS ■ S tandard M ic ro c irc u it D raw ing, 5962-92078 PIN CONFIGURATION TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 ^ ■ MIL-STD-883 C o m p liant Devices A v a ila b le
|
OCR Scan
|
PDF
|
WS512K8-XCX
512Kx8
120nS
MIL-STD-883
-550C
120nS
100nS
01HXX
02HXX
03HXX
|
7A4L
Abstract: WS256K8
Text: T T WS256K8-XCX I/WHITE /MICROELECTRONICS 256Kx8 SRAM MODULE FEATURES FIG. 1 • Access T im e s 55 to 120nS PIN CONFIGURATION TOP VIEW ^ 32 n vcc 31 J A 15 30 j A 17 29 J W E 28 1 A 13 27 ;] as 26 J A9 25 H A11 24 □ OE S ta n d a rd M ic ro c irc u it D ra w in g , 5962-93157
|
OCR Scan
|
PDF
|
WS256K8-XCX
256Kx8
120nS
IL-STD-883
120nS
100nS
01HXX
02HXX
03HXX
04HXX
7A4L
WS256K8
|
Untitled
Abstract: No abstract text available
Text: I/M-IITE /M IC R O ELEC T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 P IN C O N F IG U R A T IO N T O P V IE W L 1 A16 r 2 A15 [7 3 32 A12 4 29 A7C 5 A6 [T 6 A5 E 7
|
OCR Scan
|
PDF
|
WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
150nS,
200nS,
250nS,
300nS
|
Untitled
Abstract: No abstract text available
Text: TT W S512K8-XCX 1/1/HITE / M I C R O E L E C T R O N I C S 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW A18 C 1 A 1 6C 2 ^ 32 31 30 □ A17 A I2 C 4 A7C 5 29 □ WË A6 C 6 27 □ A8 A5 C 7 26 □ A9 3 A ccess Tim es 55, 70, 8 5 , 1 0 0 , 120ns
|
OCR Scan
|
PDF
|
S512K8-XCX
512Kx8
120ns
MIL-STD-883
01HXX
02HXX
03HXX
04HXX
05HXX
|
Untitled
Abstract: No abstract text available
Text: ça WHITE /MICROELECTRONICS WF4M32-XXX5 4MX32 5V FLASH MODULE, SMD 5962-97531 pending PRELIMINARY* FEATURES • Access Times of 1 0 0 ,1 2 0 ,150ns ■ User configurable as 8Mx16 or 16Mx8 in HIP and G4T packages. ■ Packaging: • 66-pin, PGA Type, 1.385 inch square, Hermetic Ceramic
|
OCR Scan
|
PDF
|
WF4M32-XXX5
4MX32
150ns
8Mx16
16Mx8
66-pin,
01HXX*
64KByte
120ns
02HXX*
|
Untitled
Abstract: No abstract text available
Text: ça W S512K32-XXX WHITE /MICROELECTRONICS 512Kx32 SRAM MODULE, SMD 5962-94611 P R E L IM IN A R Y * FEATURES • A cce ss Times of 70, 8 5 ,1 0 0 ,120ns ■ Commercial, Industrial and Military Temperature Ranges ■ Packaging ■ TTL Compatible Inputs and Outputs
|
OCR Scan
|
PDF
|
S512K32-XXX
512Kx32
120ns
66-pin,
01HZX
100ns
02HZX
03HZX
04HZX
|
Untitled
Abstract: No abstract text available
Text: WF2M16-XXX5 •lì HI-REÜA8IUTY PBÛÔUCï 2M x 16 FLASH MODULE, S M D 5962-97610 pending P R ELIM IN A R Y * FEA TU R ES D ata P o llin g and T o g g le B it fe a tu re fo r d e te c tio n of prog ram ■ A c c ess T im e s of 90, 120, 150ns ■ or era se cycle com p letio n .
|
OCR Scan
|
PDF
|
WF2M16-XXX5
150ns
64KByte
120ns
02HXX*
03HXX*
|