Untitled
Abstract: No abstract text available
Text: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words
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M29DW640F
TSOP48
24Mbit
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JESD97
Abstract: M29DW128F TSOP56 6C80
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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M29DW128F
TSOP56
32-Word
16Mbit
48Mbit
16Mbit
TBGA64
JESD97
M29DW128F
TSOP56
6C80
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M29W128FL
Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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M29W128FH
M29W128FL
Words/16
TSOP56
32-Word
64-Bytes)
M29W128FL
Memory Protection Devices
M29W128FH
JESD97
M29W128F
TSOP56
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JESD97
Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)
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M29DW128F
TSOP56
32-Word
TBGA64
16Mbit
48Mbit
16Mbit
JESD97
M29DW128F
TSOP56
esn 234
D2578
5PWA
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Untitled
Abstract: No abstract text available
Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words
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M29W640FT
M29W640FB
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Untitled
Abstract: No abstract text available
Text: M29W640FT M29W640FT 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words
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M29W640FT
M29W640FT
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Untitled
Abstract: No abstract text available
Text: M29DW641F 64 Mbit 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP/WP=12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words
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M29DW641F
24Mbit
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M29W128FL
Abstract: JESD97 M29W128F M29W128FH TSOP56 a12a22
Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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M29W128FH
M29W128FL
Words/16
TSOP56
32-Word
64-Bytes)
TBGA64
M29W128FL
JESD97
M29W128F
M29W128FH
TSOP56
a12a22
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A0-A21
Abstract: JESD97 M29DW641F TFBGA48
Text: M29DW641F 64 Mbit 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP/WP=12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words
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M29DW641F
24Mbit
A0-A21
JESD97
M29DW641F
TFBGA48
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apdu
Abstract: ISO7816 AN2271 ISO7816-12 NAND flash interface ISO7816-1 ST72651 ISO-7816
Text: AN2271 APPLICATION NOTE Ekey-Udisk solution Introduction This document describes a firmware implementation for an Ekey-Udisk device based on ST72651. The software is divided into 3 parts: ● USB management: the main USB operations are managed by a USB library with USB
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AN2271
ST72651.
ISO7816-1,
apdu
ISO7816
AN2271
ISO7816-12
NAND flash interface
ISO7816-1
ST72651
ISO-7816
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STB55NF06
Abstract: p55nf06 Mosfet P55NF06 P55nf B55NF06 P55nf*06 for p55nf06 "p55nf06" b55nf p55nf06fp
Text: STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STB55NF06 60V <0.018Ω 50A STB55NF06-1 60V <0.018Ω 50A STP55NF06 60V <0.018Ω
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STB55NF06
STB55NF06-1
STP55NF06
STP55NF06FP
D2PAK/I2PAK/TO-220/TO-220FP
STB55NF06
STP55NF06
O-220
p55nf06
Mosfet P55NF06
P55nf
B55NF06
P55nf*06
for p55nf06
"p55nf06"
b55nf
p55nf06fp
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Untitled
Abstract: No abstract text available
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Asynchronous Random/Page Read – Page width: 8 Words
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M29DW128F
32-Word
16Mbit
48Mbit
16Mbit
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D70N02L
Abstract: STD70N02L STD70N02L-1 JESD97
Text: STD70N02L STD70N02L-1 N-channel 24V - 0.0068Ω - 60A - DPAK - IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD70N02L 24V <0.008Ω 60A STD70N02L-1 24V <0.008Ω 60A • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced
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STD70N02L
STD70N02L-1
D70N02L
STD70N02L
STD70N02L-1
JESD97
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A0-A21
Abstract: JESD97 M29W640F M29W640FB M29W640FT TFBGA48
Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words
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M29W640FT
M29W640FB
TFBGA48
A0-A21
JESD97
M29W640F
M29W640FB
M29W640FT
TFBGA48
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P55nf
Abstract: p55nf06 OF P55NF06 b55nf Mosfet P55NF06 for p55nf06 P55nf*06 P55NF0 B55NF06 P55NF06FP
Text: STB55NF06, STP55NF06, STP55NF06FP N-channel 60 V, 0.015 Ω, 50 A STripFET II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet — production data Features TAB TAB Order code VDSS RDS on max. 60 V < 0.018 Ω STB55NF06 STP55NF06 ID 50 A 3 1
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STB55NF06,
STP55NF06,
STP55NF06FP
O-220
O-220FP
STB55NF06
STP55NF06
O-220
O-220FP
P55nf
p55nf06
OF P55NF06
b55nf
Mosfet P55NF06
for p55nf06
P55nf*06
P55NF0
B55NF06
P55NF06FP
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N6796
Abstract: No abstract text available
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)
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M29DW128F
32-Word
16Mbit
48Mbit
16Mbit
N6796
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M29W128
Abstract: No abstract text available
Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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M29W128FH
M29W128FL
Words/16
32-Word
64-Bytes)
M29W128
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Numonyx
Abstract: JESD97 M29W640F M29W640FB M29W640FT TFBGA48 A0-A21
Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words
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M29W640FT
M29W640FB
TFBGA48
Numonyx
JESD97
M29W640F
M29W640FB
M29W640FT
TFBGA48
A0-A21
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M29DW640F
Abstract: A0-A21 JESD97 TFBGA48
Text: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words
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M29DW640F
TSOP48
24Mbit
M29DW640F
A0-A21
JESD97
TFBGA48
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A0-A21
Abstract: JESD97 M29DW641F TFBGA48
Text: M29DW641F 64 Mbit 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP/WP=12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words
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M29DW641F
TSOP48
24Mbit
A0-A21
JESD97
M29DW641F
TFBGA48
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marking EG
Abstract: AN1751 Date Code Marking STMicroelectronics Part Marking STMicroelectronics AN1235 ESDA14V2-2BF3 JESD97 M033
Text: ESDA14V2-2BF3 ASD Application Specific Devices Dual bidirectional TRANSIL array for ESD protection Application Where transient overvoltage protection in ESD sensitive equipment is required, such as : • Computers ■ Printers ■ Communication systems and cellular phones
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ESDA14V2-2BF3
ESDA14V2-2BF3
IEC61000-4-2without
marking EG
AN1751
Date Code Marking STMicroelectronics
Part Marking STMicroelectronics
AN1235
JESD97
M033
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ESDA14V2-2BF3
Abstract: AN1751 AN2348 JESD97
Text: ESDA14V2-2BF3 Quad bidirectional Transil array for ESD protection Features • 2 bidirectional Transil functions ■ ESD protection: IEC 61000-4-2 level 4 ■ Stand off voltage: 12 V Min. ■ Low leakage current ■ Very small PCB area < 1.5 mm2 ■ 400 microns pitch
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ESDA14V2-2BF3
ESDA14V2-2BF3
AN1751
AN2348
JESD97
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Untitled
Abstract: No abstract text available
Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words
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M29W640FT
M29W640FB
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Untitled
Abstract: No abstract text available
Text: 4 TH 1S DRAW 1NG IS UNPUBL1SHED . C COPYR1GHT 20 3 RELEASED FOR PUBLICATION 2 20 LOC D I ST BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS P LTR A MATER CONNECTOR AS S E MBL Y : REAR BODY: GL AS S R I L L E D P O L Y E S T E R , PBT PLUNGER : ALUMINUM AL LOY
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OCR Scan
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PDF
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02DEC
02DEC2005
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