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    A12A22 Search Results

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    A12A22 Price and Stock

    OTTO Engineering Inc HTW-1A12A22

    Industrial Hall Effect / Magnetic Sensors Thumbwheel +/- 40o 2.5 +/- 2.0VDC Pddl
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    Mouser Electronics HTW-1A12A22 18
    • 1 $89.79
    • 10 $75.61
    • 100 $67.85
    • 1000 $67.85
    • 10000 $67.85
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    Sager HTW-1A12A22 3
    • 1 -
    • 10 $76.49
    • 100 $65
    • 1000 $56.99
    • 10000 $56.99
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    OTTO Engineering Inc HTWS-2A12A22

    Industrial Hall Effect / Magnetic Sensors PROPOTIONAL THUMBWHEEL PADDLE LF SPRING
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    Mouser Electronics HTWS-2A12A22 10
    • 1 $100.58
    • 10 $93.57
    • 100 $74.85
    • 1000 $74.85
    • 10000 $74.85
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    Sager HTWS-2A12A22 3
    • 1 -
    • 10 $71.26
    • 100 $60.56
    • 1000 $53.09
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    OTTO Engineering Inc HTW-2A12A22A

    Industrial Hall Effect / Magnetic Sensors Thumbwheel +/- 30o 2.5 +/- 2.0VDC Pddl
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HTW-2A12A22A 4
    • 1 $111.65
    • 10 $103.87
    • 100 $90.37
    • 1000 $90.37
    • 10000 $90.37
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    Sager HTW-2A12A22A 3
    • 1 -
    • 10 $79.11
    • 100 $67.22
    • 1000 $58.94
    • 10000 $58.94
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    OTTO Engineering Inc HTWM-1A12A22

    Industrial Hall Effect / Magnetic Sensors Thumbwheel +/- 40o 2.5 +/- 2.0VDC Pddl
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HTWM-1A12A22 15
    • 1 $107.96
    • 10 $100.44
    • 100 $87.38
    • 1000 $87.38
    • 10000 $87.38
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    Sager HTWM-1A12A22 3
    • 1 -
    • 10 $76.49
    • 100 $65
    • 1000 $56.99
    • 10000 $56.99
    		Buy Now

    OTTO Engineering Inc HTWF-1A12A22

    Industrial Hall Effect / Magnetic Sensors Thumbwheel +/- 30o 0.5-4.5VDC Pddl
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HTWF-1A12A22
    • 1 $115.34
    • 10 $107.31
    • 100 $93.35
    • 1000 $93.35
    • 10000 $93.35
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    Sager HTWF-1A12A22 3
    • 1 -
    • 10 $81.72
    • 100 $69.44
    • 1000 $60.88
    • 10000 $60.88
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    Find more A12A22 price and stock on Findchips.com

    A12A22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A-7720-ANA228A HOUSING 7720-AN TERM. NO 7691-A228 PLATING: 228 COLOR BROWN MATL NO ENG NO: A-7720-A02A228A A-7720-A03A228A A-7720-A04A228A A-7720-A05A228A A-7720-A06A228A A-7720-A07A228A A-7720-A08A228A A-7720-A09A228A A-7720-A10A228A A-7720-A11A228A A-7720-A12A228A


    Original     		PDF -7720-ANA228A 7720-AN 7691-A228 -7720-A02A228A -7720-A03A228A -7720-A04A228A -7720-A05A228A -7720-A06A228A -7720-A07A228A -7720-A08A228A

    JESD97

    Abstract: M29DW128F TSOP56 6C80
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29DW128F TSOP56 32-Word 16Mbit 48Mbit 16Mbit TBGA64 JESD97 M29DW128F TSOP56 6C80

    M29W128FL

    Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) M29W128FL Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56

    JESD97

    Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW128F TSOP56 32-Word TBGA64 16Mbit 48Mbit 16Mbit JESD97 M29DW128F TSOP56 esn 234 D2578 5PWA

    DQ141

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW128F 32-Word 16Mbit 48Mbit 16Mbit DQ141

    CR10

    Abstract: J-STD-020B M58WR128FB VFBGA56
    Text: M58WR128FT M58WR128FB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR128FT M58WR128FB 66MHz CR10 J-STD-020B M58WR128FB VFBGA56

    15SP 016

    Abstract: tb 1229 bn tda 2022 2N1150 P96-P97 PMC8316 W134 nec d299 PCS17 dtc114
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF V850E/MS2TM PD703130 U14985JJ2V0UM00 U14985JJ2V0UM 12A0-A15Address0-15. 13D0-D7Data0-7. 10AVDD 11AVSS 15SP 016 tb 1229 bn tda 2022 2N1150 P96-P97 PMC8316 W134 nec d299 PCS17 dtc114

    M29W128FL

    Abstract: JESD97 M29W128F M29W128FH TSOP56 a12a22
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) TBGA64 M29W128FL JESD97 M29W128F M29W128FH TSOP56 a12a22

    Untitled

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary „ Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ Asynchronous Random/Page Read – Page width: 8 Words


    Original     		PDF M29DW128F 32-Word 16Mbit 48Mbit 16Mbit

    Untitled

    Abstract: No abstract text available
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Features summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) TBGA64

    V810

    Abstract: V821 PD70732 uPD70741 UPD70732 C0000080 C0000082 C0000056 C00000D0
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    SmD TRANSISTOR t1w

    Abstract: transistor smd t1W MTH 50 -1020 24 port terminal block dwa 108 a smd p08 V810 dwa 105 dwa 108 SMD t2f TRANSISTOR BC 187
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF d88-6130 SmD TRANSISTOR t1w transistor smd t1W MTH 50 -1020 24 port terminal block dwa 108 a smd p08 V810 dwa 105 dwa 108 SMD t2f TRANSISTOR BC 187

    N6796

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW128F 32-Word 16Mbit 48Mbit 16Mbit N6796

    M29W128

    Abstract: No abstract text available
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29W128FH M29W128FL Words/16 32-Word 64-Bytes) M29W128

    CR10

    Abstract: J-STD-020B M30L0R7000B0 M30L0R7000T0
    Text: M30L0R7000T0 M30L0R7000B0 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R7000T0 M30L0R7000B0 54MHz CR10 J-STD-020B M30L0R7000B0 M30L0R7000T0

    ws-011

    Abstract: K2564 t2F sot 23 CM119 SMD t2f UART AY 5 1012 ws011 U10082J V810 V821
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF V821TM PD70741 U10077JJ5V0UMJ1 FAX044435-9608 ws-011 K2564 t2F sot 23 CM119 SMD t2f UART AY 5 1012 ws011 U10082J V810 V821

    smd p08

    Abstract: C0000056 PD70732 uPD70741 V810 V821
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD70741 V821TM 32-/16-BIT MICROPROCESSOR The µPD70741 V821 is a 32/16-bit RISC microprocessor that uses, as its processor core, the highperformance 32-bit microprocessor µPD70732 (V810TM) designed for built-in control applications. It incorporates


    Original     		PDF PD70741 V821TM 32-/16-BIT 32/16-bit 32-bit PD70732 V810TM) smd p08 C0000056 PD70732 uPD70741 V810 V821

    M29W128FH

    Abstract: M29W128F a8a5 B60000 M29W128FL
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29W128FH M29W128FL Words/16 32-Word 64-Bytes) M29W128F a8a5 B60000 M29W128FL

    U850

    Abstract: V821 V810 PD70732 uPD70741 uPD70741GC 10fxx V810 NEC
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PD70741 V821TM PD70741V82132PD70732 V810TMDRAM/ROMDMA V821U10077J V810TMU10082J 32V810CPU IEI-601 U850 V821 V810 PD70732 uPD70741 uPD70741GC 10fxx V810 NEC

    3x3 matrix

    Abstract: 3F84 ADMC331 6F26 0x3242
    Text: a Basic Matrix Functions for ADMC331 AN331-15 a Basic Matrix Functions for ADMC331 AN331-15 Analog Devices Inc., November 2000 Page 1 of 20 a Basic Matrix Functions for ADMC331 AN331-15 Table of Contents SUMMARY. 3


    Original     		PDF ADMC331 AN331-15 3x3 matrix 3F84 ADMC331 6F26 0x3242

    703100AGJ-33

    Abstract: K2564 703102agj-33 15SP 016 703101agj-33 2N1150 70F3102 uPD703101 70F3102A uPD703102A
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF V850E/MS1TM PD703100 PD703100A PD703101 PD703101A PD703102 PD703102A PD70F3102 PD70F3102A U12688JJ6V0UM00 703100AGJ-33 K2564 703102agj-33 15SP 016 703101agj-33 2N1150 70F3102 uPD703101 70F3102A uPD703102A

    aso16

    Abstract: ct 408 ac50 8a uPD703103A uPD703105A uPD703106A uPD703107A uPD70F3107A V850E1 RIN31 SCR613
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF V850E/MA1 PD703103A PD703105A PD703106A PD703107A PD70F3107A PD70F3107A U14359JJ6V0UD006 U14359JJ6V0UD aso16 ct 408 ac50 8a uPD703103A uPD703105A uPD703106A uPD703107A uPD70F3107A V850E1 RIN31 SCR613

    Untitled

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29DW128F 32-Word 16Mbit 48Mbit 16Mbit

    CR10

    Abstract: M58LR128FB M58LR128FT VFBGA56
    Text: M58LR128FT M58LR128FB 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M58LR128FT M58LR128FB 54MHz CR10 M58LR128FB M58LR128FT VFBGA56