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Rochester Electronics LLC GT28F800B3T90 IC FLASH 8MBIT CUI 48UBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT28F800B3T90	Bulk	178,740		417	1 - 10 - 100 - 1000 $0.72 10000 $0.72	Buy Now
Rochester Electronics LLC TE28F800B3TA120 ADVANCED BOOT BLOCK FLASH MEMORY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TE28F800B3TA120	Bulk	31,102		67	1 - 10 - 100 $4.5 1000 $4.5 10000 $4.5	Buy Now
Rochester Electronics LLC GT28F800B3T110 IC FLASH 8MBIT CUI 48UBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT28F800B3T110	Bulk	12,000		417	1 - 10 - 100 - 1000 $0.72 10000 $0.72	Buy Now
Rochester Electronics LLC GT28F800B3T120 IC FLASH 8MBIT CUI 48UBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT28F800B3T120	Bulk	4,680		417	1 - 10 - 100 - 1000 $0.72 10000 $0.72	Buy Now
Microchip Technology Inc DSC6122CI2A-00B3T MEMS OSC XO 1.71V-3.63V 4SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DSC6122CI2A-00B3T	Reel	2,000		1,000	1 - 10 - 100 - 1000 $0.67 10000 $0.67	Buy Now
NAC	DSC6122CI2A-00B3T				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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00B3T Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
7406PC Abstract: 7406 ic pin diagram Text: { NATIONAL SEflICOND -CLOGIO 02E D I ^501122 00b3t,M3 3 I _T* YJ-/S' - 06 CO NNECTIO N DIAGRAM PINOUT A 54/7406 HEX INVERTER BUFFER/DRIVER With O pen-Collector High-Voltage Output E E E E E E >E ORDERING CODE: See Section 9 PIN PKGS	OCR Scan	PDF	00b3t 7406PC 7406DC 7406FC 5406DM -l-L-Jl11- 7406 ic pin diagram
TSH321 Abstract: No abstract text available Text: SGS-THOMSON TSH321 WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 300MHz GAIN OF 2 STABILITY SLEW RATE : 400V/\|as VERY FAST SETTLING TIME : 60ns 0.1% VERY HIGH INPUT IMPEDANCE DESCRIPTION: The TSH321 is a wideband monolithic operational	OCR Scan	PDF	TSH321 300MHz TSH321
c17f Abstract: IE-02 BUK436-100A BUK436-100B Text: PHILIPS INTERNATIONAL bSE D B 711DS2b DObHfl^b c17fl • P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended tor use in	OCR Scan	PDF	7110fl2b c17fl BUK436-100A/B BUK436 -100A -100B /C-\15 c17f IE-02 BUK436-100A BUK436-100B
27CP128 Abstract: 27CP128Q250 27C256 General Semiconductor 27cp128q 27CP128Q250/883 Text: NATL S E M I C O N D 31E D MEMORY March 1989 "7= Ì & - / Ì - 2 9 27CP128 131,072-Bit (16,384 x 8) UV Erasable CMOS PROM Military Qualified General Description Features The 27CP128 is a high-speed 128K UV erasable and electri cally reprogrammable CMOS EPROM, ideally suited for ap	OCR Scan	PDF	bSG112b 27CP128 072-Bit 28-pin 32-pin 27CP128Q250 27C256 General Semiconductor 27cp128q 27CP128Q250/883
27S12 Abstract: 27128 memory nsc600 Text: 3IE DApril 1989 V 6 - / 3 - Z .J 27C64 65,536-Bit 8,192 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C64 Is a high-speed 64K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applica tions where fast turnaround, pattern experimentation and	OCR Scan	PDF	0112b 27C64 536-Bit 28-pin 32-pin 2-26A 39M131931 27S12 27128 memory nsc600
LSD112E Abstract: No abstract text available Text: "NATIONAL SEfllCOND {L OG IC} D5E D \| b S D l l E S □□bBc142 2 \| 199 'F H L -o f-òS ' CO NNECTIO N DIAGRAM PINO UT A 54/74199 8-B IT PARALLEL I/O SH IFT REGISTER D E S C R IP T IO N — The ’199 is a parallel in, parallel out register featuring synchronous parallel load, shift right and hold modes. State changes are	OCR Scan	PDF
0112E Abstract: 3055 data de Text: 221A S e m i c o.n d u c t o r National 74VHC221A Dual Non-Retriggerable Monostable Multivibrator General Description The ’VHC221A is an advanced high speed CMOS Monosta ble Multivibrator fabricated with silicon gate CMOS technol ogy. It achieves the high speed operation similar to equiva	OCR Scan	PDF	74VHC221A VHC221A 74VHC bSG1122 D003bfiS 0112E 3055 data de
BUK444-400B Abstract: No abstract text available Text: PHILIPS INTERNATIONAL bSE D • 711D6Sti D0fci3^bti Dll M P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	PDF	711D6Sti BUK444-400B -SOT186 BUK444-400B
PHILIPS MOSFET MARKING Abstract: BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351 Text: • ^53^31 aG23b34 Mbl ■ APX N AMER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification date of issue April 1991 FEATURES • Short channel transistor with high ratio \|YfS I/C* • Low noise gain controlled amplifier to 1 GHz.	OCR Scan	PDF	BF998 OT143 PHILIPS MOSFET MARKING BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351
philips lps 100 Abstract: BUK441 BUK441-100A BUK441-100B P101 Text: PHILIPS INTERN ATI ONAL fc.SE D H 7110fl5t> 0Qfa3*m 741 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In	OCR Scan	PDF	711002b BUK441-100A/B -SOT186 BUK441 -100A -100B 711DASfc. philips lps 100 BUK441-100A BUK441-100B P101
BUK436-1000B Abstract: buk436-1000 Text: PHILIPS INTERNATIONAL bSE ]> m 711062b ODba'Ill TD4 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	711002b BUK436-1000B 7110fl2fci buk436-1000
BUK444 Abstract: BUK444-800A BUK444-800B YA11 Text: PHILIPS INTERNATIONAL fc.SE D • 7110fl2b DDt,3^fll 356 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	PDF	7110fl2b BUK444-800A/B OT186 BUK444 -800A -800B BUK444-800A BUK444-800B YA11
BUK436-1000B Abstract: No abstract text available Text: PHILIPS INTERNATIONAL bSE ]> m 711062b ODba'Ill TD4 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	711062b BUK436-1000B BUK436-1000B
SVR 681 Abstract: LM393 TS3V3702 TS3V393 TS3V393I Text: / = 7 SG S-TH O M SO N TS3V393 3V MICROPOWER DUAL VOLTAGE COMPARATORS • DEDICATED TO 3.3V OR BATTERY SUPPLY specified at 3V and 5V ■ EXTREMELY LOW SUPPLY CURRENT : 9\|xA typ/comparator ■ WIDE SINGLE SUPPLY RANGE 2.7V to 16V ■ EXTREMELY LOW INPUT CURRENTS :	OCR Scan	PDF	TS3V393 LM393 TS3V393 LM393) TS3V3702 10kHz, 7CI2C1237 SVR 681 LM393 TS3V393I

transistor BC 568 Abstract: dgb3t 100-P BUK442 BUK442-100A BUK442-100B smps tig welding transistor BC 209 Text: PHILIPS INTERNATIONAL b5E D • 711DflEb a D b 3 T 4 b Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	BUK442-100A/B PINNING-SOT186 -ID/100 transistor BC 568 dgb3t 100-P BUK442 BUK442-100A BUK442-100B smps tig welding transistor BC 209