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    0030B Search Results

    0030B Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    RTKA223011DR0030BU Renesas Electronics Corporation RAA223011 High Voltage Buck Converter Demonstration Board, 85VAC to 265VAC Input and 24V 200mA Output Visit Renesas Electronics Corporation
    10123730-000030BLF Amphenol Communications Solutions HPCE VT Receptacle 30S Visit Amphenol Communications Solutions
    10121505-320030BLF Amphenol Communications Solutions HPCE VT Receptacle with enhanced wall 32P30S Visit Amphenol Communications Solutions
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    0030B Price and Stock

    onsemi NCL30030B1DR2G

    IC LED DRIVER OFFL 500MA 16SOIC
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    DigiKey NCL30030B1DR2G Digi-Reel 2,470 1
    • 1 $3.11
    • 10 $1.976
    • 100 $1.3446
    • 1000 $0.99389
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    NCL30030B1DR2G Cut Tape 2,470 1
    • 1 $3.11
    • 10 $1.976
    • 100 $1.3446
    • 1000 $0.99389
    • 10000 $0.99389
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    Bristol Electronics NCL30030B1DR2G 2,310
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    Rochester Electronics NCL30030B1DR2G 13,893 1
    • 1 $1.07
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    • 100 $1.01
    • 1000 $0.9095
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    Flip Electronics NCL30030B1DR2G 25,000
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    Wuhan P&S NCL30030B1DR2G 2,110 1
    • 1 $2.56
    • 10 $2.56
    • 100 $1.64
    • 1000 $1.24
    • 10000 $1.24
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    onsemi NCL30030B3DR2G

    IC LED DRIVER OFFL 16SOIC
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    DigiKey NCL30030B3DR2G Cut Tape 2,440 1
    • 1 $3.39
    • 10 $2.159
    • 100 $1.4774
    • 1000 $1.09883
    • 10000 $1.09883
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    Mouser Electronics NCL30030B3DR2G 2,321
    • 1 $2.76
    • 10 $1.73
    • 100 $1.43
    • 1000 $1.1
    • 10000 $1.03
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    Bristol Electronics NCL30030B3DR2G 1,017
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    Rochester Electronics NCL30030B3DR2G 29,700 1
    • 1 $1.15
    • 10 $1.15
    • 100 $1.08
    • 1000 $0.9775
    • 10000 $0.9775
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    Avnet Silica NCL30030B3DR2G 25 Weeks 2,500
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    EBV Elektronik NCL30030B3DR2G 25 Weeks 2,500
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    Eaton Bussmann PTR060V0030-BK

    PTC RESET FUSE 60V 300MA RADIAL
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    DigiKey PTR060V0030-BK Bulk 340 1
    • 1 $0.36
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    • 100 $0.2131
    • 1000 $0.16392
    • 10000 $0.13613
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    Newark PTR060V0030-BK Bulk 8,500 1
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    Master Electronics PTR060V0030-BK
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    • 10000 $0.244
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    Sager PTR060V0030-BK 500
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    Davies Molding LLC 0030BG

    KNOB SMOOTH M10 X 1.5 PHENOLIC
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    DigiKey 0030BG Bulk 203 1
    • 1 $3.64
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    • 100 $2.3871
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    • 10000 $2.3871
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    Mouser Electronics 0030BG
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    Maxim Integrated Products MAX20030BATMA-V-

    IC REGULATOR BUCK
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    DigiKey MAX20030BATMA-V- Tube 114 1
    • 1 $8.93
    • 10 $6.165
    • 100 $4.6502
    • 1000 $3.83032
    • 10000 $3.7125
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    0030B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    0030BE Davies Molding Hardware, Fasteners, Accessories - Knobs - KNOB SMOOTH M6 X 1 PHENOLIC Original PDF
    0030BF Davies Molding Hardware, Fasteners, Accessories - Knobs - KNOB SMOOTH M8 X 1.25 PHENOLIC Original PDF
    0030BG Davies Molding Hardware, Fasteners, Accessories - Knobs - KNOB SMOOTH M10 X 1.5 PHENOLIC Original PDF

    0030B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Multilayer Chip Beads BMB-B Series 50 Specification Characteristic Rated DC Resistance Curves Current mA (ohms) See Page maximum maximum. Part Number Impedance (ohms) at 100MHz BMB-1J-0005B-N3 BMB-1J-0017B-N3 BMB-1J-0030B-N3 BMB-1J-0070B-N3 BMB-1J-0100B-N3


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    100MHz BMB-1J-0005B-N3 BMB-1J-0017B-N3 BMB-1J-0030B-N3 BMB-1J-0070B-N3 BMB-1J-0100B-N3 BMB-1J-0120B-N3 BMB-1J-0200B-N3 BMB-1J-0240B-N3 BMB-1J-0300B-N3 PDF

    DSPHEX

    Abstract: TMS32025 TMS32050 addressing modes with examples SPRU011 SPRU014 SPRU018D SPRU052 TMS320 Tektronix asg 100 SPRU013
    Text: TMS320C1x/C2x/C2xx/C5x Assembly Language Tools User’s Guide 1995 Microprocessor Development Systems Printed in U.S.A., March 1995 SDS SPRU018D TMS320C1x/C2x/C2xx/C5x Assembly Language Tools 1995 User’s Guide TMS320C1x/C2x/C2xx/C5x Assembly Language Tools


    Original
    TMS320C1x/C2x/C2xx/C5x SPRU018D DSPHEX TMS32025 TMS32050 addressing modes with examples SPRU011 SPRU014 SPRU018D SPRU052 TMS320 Tektronix asg 100 SPRU013 PDF

    PLSI 1016-60LJ

    Abstract: PAL 007 pioneer pal16r8 programming algorithm PAL 008 pioneer lattice 1016-60LJ ISP Engineering Kit - Model 100 PLSI-2064-80LJ GAL16v8 programmer schematic GAL programming Guide ispLSI 2064-80LT
    Text: Lattice Semiconductor Data Book 1996 Click on one of the following choices: • Table of Contents • Data Book Updates & New Products • Go to Main Menu 1996 Lattice Semiconductor Corporation. All rights reserved. ispLSI and pLSI Product Index Pins Density


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    1016E 1032E 20ters 48-Pin 304-Pin PLSI 1016-60LJ PAL 007 pioneer pal16r8 programming algorithm PAL 008 pioneer lattice 1016-60LJ ISP Engineering Kit - Model 100 PLSI-2064-80LJ GAL16v8 programmer schematic GAL programming Guide ispLSI 2064-80LT PDF

    RDRAM RAMBUS

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE6D Direct RambusTM DRAM RIMMTM Module 256M-BYTE 128M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other


    Original
    MC-4R256FKE6D 256M-BYTE 128M-WORD 16-BIT) MC-4R256FKE6D PD488588) 600MHz, 711MHz 800MHz RDRAM RAMBUS PDF

    lattice 1996

    Abstract: No abstract text available
    Text: ispLSI and pLSI 2128 ® High-Density Programmable Logic Functional Block Diagram Output Routing Pool ORP Output Routing Pool (ORP) D7 D3 D5 fmax = 100 MHz Maximum Operating Frequency tpd = 10 ns Propagation Delay TTL Compatible Inputs and Outputs Electrically Erasable and Reprogrammable


    Original
    PDF

    0E907

    Abstract: 0C062 095B9 0E31A tms320cxx 00071H 0A95 0730Ah 0A85 0646Ah
    Text: Application Report SPRA503 Implementing Speech Data for French LPC Date andTime-Stamping DTS on the TMS320CXX DSP Gerardo Murillo Digital Signal Processing Solutions Abstract This document provides a vocabulary of French speech data coded in LPC (format D6). This


    Original
    SPRA503 TMS320CXX TMS320CXX 0E907 0C062 095B9 0E31A 00071H 0A95 0730Ah 0A85 0646Ah PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8D Direct RambusTM DRAM RIMMTM Module 256M-BYTE 128M-WORD x 18-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other


    Original
    MC-4R256FKE8D 256M-BYTE 128M-WORD 18-BIT) MC-4R256FKE8D PD488588) 600MHz, 711MHz 800MHz PDF

    100-P

    Abstract: BUK456 BUK456-60A BUK456-60B T0220AB dm 369 rv
    Text: N AMER PHILIPS/DISCRETE bTE D bbSBTBl 0030b7D LET • APX Product Specification Philips Semiconductors B U K456-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    K456-60A/B BUK456 T0220AB BUK456-60A/B 100-P BUK456-60A BUK456-60B T0220AB dm 369 rv PDF

    SGS40TA045

    Abstract: No abstract text available
    Text: 3QE » m 7 eJ2cî 5 3 7 0030b4fi Q • rZZ SCS-THOMSON “ 7# ^DOæULllOïïiOOaflûS t-w s i S G S 4 0 T A 045 S G S- TH O M SO N NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE . ADAPTED FOR HIGH POWER SWITCHING


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    0030b4fi T0-240) T-91-20 O-240) PC-029« SGS40TA045 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b 'lE D bbS3T31 0030bS5 312 * A P X Product Specification Philips Semiconductors BUK455-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    bbS3T31 0030bS5 BUK455-400B O220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: N AHER PHILIPS/DISCRETE bTE D ^53=531 0030b7D Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    0030b7D -TO220AB BUK456-60A/B BUK456 PDF

    philips tv smps

    Abstract: BUK454-500B T0220AB
    Text: N AMER PHIL IPS /DISCRETE fc»TE D • fcifc.Sa'm 0030b25 b6S H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    0030b25 BUK454-500B T0220AB BUK454-500B philips tv smps PDF

    VOICE RECORDER circuits

    Abstract: voice recording chip S-5800A CMOS LSI two sound generator opamp manual cpu in construction 256Ki1 S5800A
    Text: _ S-5800A SPEECH RECORDING AND REPRODUCING LSI The S-5800A is a single chip CMOS LSI for recording and reproducing speech. It works by the ADPCM Adaptive Differential Pulse Code Modulation method. A low-power voice recording and reproducing system can be based on


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    S-5800A S-5800A 10-bit a14-0 64K-bit 256K-bit VOICE RECORDER circuits voice recording chip CMOS LSI two sound generator opamp manual cpu in construction 256Ki1 S5800A PDF

    l55b

    Abstract: 2200 microfarad electrolytic capacitor J501M 148X E1600c mil-c-3965 22000 microfarad capacitor 200D607X0040A1
    Text: A COMPANY TYPE 2 0 0 D. 202D W et Tantalum C apacitors OF SPRAGUE W et Sintered Anode T a n t a l e x Components T a n t a p a k ® C apacitor Assem blies FEATURES Wet Sintered Anode capacitor assemblies are widely used in filter, coupling, bypass and time-delay circuits in


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES INC M2E » □ A N ALO G D E V IC E S FEATURES 150MSPS Encode Rate Low Input Capacitance: 17pF Low Power: 750mW -S .2 V Single Supply MIL-STD-883 Compliant Versions Available • OOltfiQO OOBObMM 7 » A H A High Speed 8-Bit Monolithic A/D Converter


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    150MSPS 750mW MIL-STD-883 AD90Q2 AD9002 AD9002 10MHz 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416V1004BJ CMOS DRAM ELECTR ONICS 1M x16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    KM416V1004BJ x16Bit 1Mx16 30bSS 40SOJ 7Rb4142 Q030b5t> PDF

    5962-9752701Q3A

    Abstract: qml-38535
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS PMIC N/A REV SHEET 1 2 3 5 4 6 7 8 9 10 11 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE


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    10-BIT GG470Ã 5962-9752701Q3A qml-38535 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bR E D bb53T31 □□3Db40 RR1 « A P X Product Specification Philips Semiconductors BUK455-60A/B PowerMOS transistor GENERAL DESCRIPTION Q is n D S O N PARAMETER MAX. MAX. BUK455 Drain-source voltage Drain current (DC) Total power dissipation


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    bb53T31 3Db40 BUK455-60A/B BUK455 -TO220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE bTE D • bbS3^31 P ro d uc t S p ecificatio n P hilips S em ico nd uc tors B U K 4 5 4 -5 0 0 B P o w e rM O S tra n s is to r GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    O220AB 0030b25 PDF

    Untitled

    Abstract: No abstract text available
    Text: A D V A N C E D MI CR O D E V I C E S 3ÖE D 0 2 5 7 5 2 5 QQ3fit,bö 3 IAMD1 Preliminary Advanced Micro Devices 80C186 CMOS High Integration 16-Bit Microprocessor DISTINCTIVE CHARACTERISTICS • Direct addressing capability to 1 MByte of memory and 64-KByte I/O


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    80C186 16-Bit 64-KByte 0257S2S QFP080 4635A PDF

    BUK453-100B

    Abstract: 100-P BUK453-100A T0220AB DIODE BJE
    Text: b=JE T> N AMER PHILIPS/DISCRETE • bbS3T31 DOBQbDS AT? M A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is Intended for use in


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    bbS3131 BUK453-100A/B T0220AB BUK453 -100B BUK453-100B 100-P BUK453-100A DIODE BJE PDF

    1NA114

    Abstract: INA114AP INA114AG INA114 INA114BP ZTU2
    Text: Or, Call Customer Service at 1-800-548-6132 USA Only mmi BURR - BROW N ; _ INA114 FEATURES DESCRIPTION • LOW OFFSET VOLTAGE: 50|iV max The IN A 114 is a low cost, general purpose instrumen­ tation amplifier offering excellent accuracy. Its versa­ tile 3-op amp design and small size make it ideal for a


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    INA114 25nV/Â 115dB SOL-16 INA114 17313LS OPA177 OPA602 OPA128 17313b5 1NA114 INA114AP INA114AG INA114BP ZTU2 PDF

    MIL-C-55302

    Abstract: MILC55302 27305 531134-4
    Text: AMP Catalog 82015 Box Contact Connectors R e vis e d 5 -9 5 3 -R o w Receptacle Assemblies .100 [2.54] Centerline Series Connectors Com m ercial Receptacle Assem blies H o using M a te ria l— In accordance w ith M IL-C -55302 Contact M a te rial and Fin ish —


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    MIL-C-55302 MIL-C-55302 MIL-750 07T731H 0Q30L03 MILC55302 27305 531134-4 PDF

    AM28F256

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current


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    GD30bSS Am28F256 32-pin -32-pin Am28F256-95C4JC Am28F256-95C3JC PDF