BUV48 SE
Abstract: SGSD00036 kkz 10
Text: rZ 7 SGS-THOMSON [fflD g œ iIlL IÊ ÏÏM M ! TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future POWER MOS will, in many applications, gradually replace power bipolar devices due to the numerous
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SGS30MA050D1
250fi
SGS30M
SGS40TA045D:
SGS400T045D
O-24Q
BUV48 SE
SGSD00036
kkz 10
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S-40T
Abstract: SGS40TA045 SGS40
Text: 3DE D • 7^2^537 DG3GbS2 S ■ ' T ‘3>3' 5 fZ 7 SGS-THOMSON ^ 7# s SG S40T A 045D IL I « ! S G S-THQMSON NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS) . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING
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SC04520
O-240)
PC-029«
S-40T
SGS40TA045
SGS40
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kkz 10
Abstract: BUV48
Text: Æ T SCS-THOMSON *7 # . l«lD lSÌ [l[LS!g'irM BeS TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future PO WER MOS will, in many applications, gradually re place power bipolar devices due to the numerous
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OCR Scan
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SGS30MA050D1
SGS40TA045D:
S400T045D
kkz 10
BUV48
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SGS40TA045
Abstract: No abstract text available
Text: 3QE » m 7 eJ2cî 5 3 7 0030b4fi Q • rZZ SCS-THOMSON “ 7# ^DOæULllOïïiOOaflûS t-w s i S G S 4 0 T A 045 S G S- TH O M SO N NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS . LOW Rth JUNCTION TO CASE . ADAPTED FOR HIGH POWER SWITCHING
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0030b4fi
T0-240)
T-91-20
O-240)
PC-029«
SGS40TA045
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