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    philips tv smps

    Abstract: BUK454-500B T0220AB
    Text: N AMER PHIL IPS /DISCRETE fc»TE D • fcifc.Sa'm 0030b25 b6S H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    0030b25 BUK454-500B T0220AB BUK454-500B philips tv smps PDF

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    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE bTE D • bbS3^31 P ro d uc t S p ecificatio n P hilips S em ico nd uc tors B U K 4 5 4 -5 0 0 B P o w e rM O S tra n s is to r GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    O220AB 0030b25 PDF

    ztb 421

    Abstract: SMD M2B transistor qml-38535 40257B CDFP4-F16 S262 smd transistor 2t1 CD40257BD
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET t REV 15 SHEET REV STATUS OF SHEETS P M I C N/ A STANDARD MICROCIRCUIT DRAWING THIS D R A W I N G IS AVAI LA BL E F O R U S E B Y ALL DEPARTMENTS A N D AGENCIES OF THE D E P A R T M E N T OF DEFENSE


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    MIL-BUL-103 QML-38535. 5962R9667701VEC CD40257BDMSR 5962R9667701 CD40257BKMSR 5962R9667702VEC CD40257BDNSR 5962R9667702VXC CD40257BKNSR ztb 421 SMD M2B transistor qml-38535 40257B CDFP4-F16 S262 smd transistor 2t1 CD40257BD PDF