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    00151 Search Results

    00151 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    50015-1236JLF Amphenol Communications Solutions High Pin Count, Backplane Connectors, Header, Vertical, 4 Row, 0 Guide Pin, Through Hole, 236 Positions, 2.54mm (0.100in) Pitch Visit Amphenol Communications Solutions
    50015-1160ALF Amphenol Communications Solutions High Pin Count, Backplane Connectors, Header, Vertical, Through Hole, 4 Row, 160 Positions, 0 Guide Pin, 2.54mm (0.100in) Pitch Visit Amphenol Communications Solutions
    861400151YO6LF Amphenol Communications Solutions Board to Board connector, Unshrouded Header, Through Hole, Single Row, 15 Position, Vertical. Visit Amphenol Communications Solutions
    50015-1160JLF Amphenol Communications Solutions High Pin Count, Backplane Connectors, Header, Vertical, 4 Row, 0 Guide Pin, Through Hole, 160 Positions, 2.54mm (0.100in) Pitch Visit Amphenol Communications Solutions
    50015-1100JLF Amphenol Communications Solutions High Pin Count, Backplane Connectors, Header, Vertical, 4 Row, 0 Guide Pin, Through Hole, 100 Positions, 2.54mm (0.100in) Pitch Visit Amphenol Communications Solutions
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    00151 Price and Stock

    Mill-Max Mfg Corp 8210-0-15-15-04-27-04-0

    CONN PIN RCPT .008-.013 PRESSFIT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 8210-0-15-15-04-27-04-0 Bulk 22,990 1
    • 1 $0.55
    • 10 $0.477
    • 100 $0.3928
    • 1000 $0.28181
    • 10000 $0.25619
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    Bisco Industries 8210-0-15-15-04-27-04-0 2,400
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    Interstate Connecting Components 8210-0-15-15-04-27-04-0 4,345
    • 1 -
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    • 1000 $0.662
    • 10000 $0.4473
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    Sager 8210-0-15-15-04-27-04-0 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.07
    • 10000 $0.3327
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    Cal-Chip Electronics CHV0805N500151FCT

    HVCAP0805 COG 150PF 1% 500V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CHV0805N500151FCT Reel 16,000 4,000
    • 1 -
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    • 10000 $0.108
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    VENKEL LTD C1206C0G500-151JNE

    CAP CER 150PF 50V C0G/NP0 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C1206C0G500-151JNE Reel 11,950 4,000
    • 1 -
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    • 10000 $0.01944
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    Venkel Ltd. C1206C0G500-151JNE Reel 8,000 7 Weeks, 6 Days 4,000
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    Mill-Max Mfg Corp 0680-0-15-15-32-27-10-0

    CONN PIN RCPT .015-.025 SOLDER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0680-0-15-15-32-27-10-0 Bulk 9,457 1
    • 1 $0.39
    • 10 $0.329
    • 100 $0.2561
    • 1000 $0.18294
    • 10000 $0.16726
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    Bisco Industries 0680-0-15-15-32-27-10-0 1,593
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    Advanced Thermal Solutions Inc ATS-CPX030030015-170-C3-R0

    HEATSINK 30X30X15MM R-TAB CP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ATS-CPX030030015-170-C3-R0 Tray 90 1
    • 1 $3.44
    • 10 $3.058
    • 100 $2.74463
    • 1000 $2.5125
    • 10000 $2.5125
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    Find more 00151 price and stock on Findchips.com

    00151 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RX1214B150W

    Abstract: No abstract text available
    Text: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C


    OCR Scan     		PDF bb53131 RX1214B150W RX1214B150W

    Untitled

    Abstract: No abstract text available
    Text: International e ?r R ectifier HEXFET P o w e r M O S F E T • • • • • 4655452 0015175 b^O H I N R PD-9.646A IRFI830G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRM S Sink to Lead Creepage Dist.= 4.8mm Dynam ic dv/dt Rating


    OCR Scan     		PDF IRFI830G O-220 4S55452 1RFI830G

    Untitled

    Abstract: No abstract text available
    Text: International Tor ; Rectifier 4 fiS 5 4 5 B HEXFET Pow er M O S F E T IN T E R N A T IO N A L R E C T I F I E R • • • • • 0015154 b?5 PD-9.650A IN R IRFI730G Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm


    OCR Scan     		PDF IRFI730G O-220

    Untitled

    Abstract: No abstract text available
    Text: 11_ N AMER PHILIPS/DISCRETE LbSBTBl 0015133 OLE D RX1214B150W r J - 3 2 ^ I 'o ' M IC R O W A V E POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 1.2 to 1.4 GHz frequency range.


    OCR Scan     		PDF RX1214B150W bb53T31 T-33-15

    7Z24132

    Abstract: No abstract text available
    Text: I N AflER P H I L I P S / D I S C R E T E developm ent ObE D bb53T31 0015147 b • data PZ2327B15U T his data sheet contains advance Inform ation and specifications are subject to change w ithout notice. T -c 3 % - o * f M ICRO W AVE P O W E R T R A N SIST O R


    OCR Scan     		PDF bb53T31 pz2327b15u 7Z24131 Z24129 r-33-Q? 7Z24130 7Z24132

    marking 3t1

    Abstract: marking S3 amplifier RV2833B5X
    Text: [ I N AMER P H I L I P S / D I S C R E T E DbE D • btS3131 00151b? 1 I RV2833B5X r-3 3 -n MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.


    OCR Scan     		PDF RV2833B5X T-33-N bS3131 RV2833B5X Q01S17D marking 3t1 marking S3 amplifier

    IEC134

    Abstract: PTB42001X PTB42002X RTC4202X
    Text: N AMER PHILIPS/DISCRETE ObE D bL53T31 0015111 7 • PTB4200ÌX PTB42002X T ­ r - 3 3 -< ? 7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base c!ass-B power amplifiers up to 4 ,2 GHz. . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


    OCR Scan     		PDF bL53T31 PTB4200Ã PTB42002X 33-or PTB42001X PTB42002X IEC134 RTC4202X

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEtllCOND SECTOR ÜJ H A R R IS ItE D • 430SS71 0015113 5 ■ H D -15530/883 CMOS Manchester Encoder-Decoder June 1989 Pinouts Features • T h is C irc u it is P ro c e s s e d in A c c o rd a n c e to M il- S t d - 8 8 3 a n d is Fully HD1-1 5 5 3 0 /8 8 3 CERAMIC DIP


    OCR Scan     		PDF 430SS71 EC00ERCUC

    2N7016

    Abstract: 2N701 25X1 la 4548
    Text: SILICONIX INC lflE D -fiTfffigSCSS { • 8554735 0015125 2 2N7016 - ~ ~T-JP\-n _ P-Channel Enhancement Mode Transistor 4-P IN DIP Similar to T O -250 TOP VIEW PRODUCT SUMMARY V(BR|DSS -6 0 •d ,o?Ar (A) 1 .0 -0 .7 0 D 1 GATE 2 SOURCE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25' C Unless Otherwise Noted)1


    OCR Scan     		PDF 001512s O-250) 2N7016 aasM73s 2N7016 2N701 25X1 la 4548

    SIEMENS BST

    Abstract: SIEMENS BST P BSTP45110 BSt N 45 B 90 bst 6126 y N46C166 BSTP6113Y SIEMENS BSTP46166 Siemens 6126 BSt p 45 B 90
    Text: SIEMENS AKTIENGESELLSCHAF SAD D • £5351,05 0015155 fi ■ SIEG Phase-control thyristors TVpe V drm ¿TAV V rrm V BStN45B 60 I -tsm f i 2d t 25 °C , 10ms 25°C , 10ms A 2s A dv/df c (d;/df)c fq V/ns A/^S [IS 1 200 BSt N 45 B 90 1 350 BSt N 45 B 110 1 650


    OCR Scan     		PDF G015155 BStN45B BStN46C146 BStP45 BStP46166 BStP6113y SIEMENS BST SIEMENS BST P BSTP45110 BSt N 45 B 90 bst 6126 y N46C166 SIEMENS BSTP46166 Siemens 6126 BSt p 45 B 90

    Untitled

    Abstract: No abstract text available
    Text: G • M 'C R Ä ” t.24=iaaa 0015135 t ■ M IT S U B IS H I lsu M33220GS-20 " •\ iT ^ -n -v z - C M O S 3 2 -B ÍT P A R A L L E L M I C R O P R O C E S S O R M 3 2 /2 0 0 NITSUBISHI-CtllCMPTR/tllPRO DESCRIPTION S^E D PIN CONFIGURATION (BOTTOM VIEW>


    OCR Scan     		PDF M33220GS-20 M32/200) 32-bit

    Untitled

    Abstract: No abstract text available
    Text: S A M S U N G E L E C T R O N I C S INC b7 E D • 7 Tb4142 KMM5361000B/BG 0015150 SGÖ H i S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5361000B is a 1M bits x 36 Dynam­ ic RAM high density memory module. The Samsung


    OCR Scan     		PDF Tb4142 KMM5361000B/BG KMM5361000B 20-pin 72-pin 110ns KMM5361000B-7 130ns

    595-PH

    Abstract: 30V 595PH
    Text: International k ?r Rectifier HEXFET Power MOSFET • • • • PD-9.847 4655452 0015122 312 * I N R _ IR L IZ 24G INTERNATIONAL RECTIFIER b5E » Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive


    OCR Scan     		PDF O-220 M655452 0015R27 IRLIZ24G 595-PH 30V 595PH

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DbE D • bbS3T31 0015115 4 ■ PTB42003X T - 33 - 0 7 MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C amplifier up to a frequency of 4,2 GHz in c.w. conditions in military and professional applications.


    OCR Scan     		PDF bbS3T31 PTB42003X

    Z08420-02CMB

    Abstract: Z0842004CMBSMD Z0842002CMB z80 cio
    Text: ZILOG INC 3QE D • ^ 8 4 0 4 3 0015141 0 ■ I Z 8420 M ilitary T :5 5 33 > 5 3 Z 8O P I O Parallel _Input/Output Controller M ilitary Electrical Specification ¿■U U y December 1989 FEATURES Provides a direct interface between Z80 microcomputer


    OCR Scan     		PDF 001S1S7 40-Pin T-52-33-53 Z0842002CMB Z0842004CME Z0842004CMB 8418601QX 8418602QX Z08420-02CMB Z0842004CMBSMD Z0842002CMB z80 cio

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 30 HARRIS I I HA-2640/45 IDE D 4305271 00151SS b High Voltage Operational Amplifiers Features • • • • • • • Applications Output Voltage Swing. ±35V Supply Voltage. ±10Vto±40V


    OCR Scan     		PDF HA-2640/45 00151SS 10VtoÂ

    HA2655

    Abstract: No abstract text available
    Text: HARRIS SEIIICOND SECTOR 10E D I 4302571 001515=1 3 | HA-2650/55 HARRIS Dual High Performance Operational Amplifier D escrip tio n • S L E W R A TE • BANDW IDTH • B IA S C U R R EN T • A VG . O F F S E T V O L T A G E D R IF T • PO W ER CONSUMPTION


    OCR Scan     		PDF 4302E71 HA-2650/55 HA-2650/2655 43D5S71 T-90-20 HA2655

    PWR804

    Abstract: PWR805 PWR809 BurrBrown 4128
    Text: B U R R - B R O W N CO RP 11E „ | 1 7 3 1 3 t S 00151,13 » I pwR8xxSeriM "T-5 ~7~\\ I S B r PWR8XX Series 5 Watts— Triple-Output UNREGULATED D C /D C C O N VERTER SE R IE S FEATURES diverse applications as process control, telecommuni­ cations, portable equipment, medical systems, air­


    OCR Scan     		PDF UL544, VDE750, CSAC22 240VAC PWR804 PWR805 PWR809 BurrBrown 4128

    40174B

    Abstract: 40174 40174BE SGS semiconductor 40174BD
    Text: S G S-THOMSON 07C D I 7 ^ 2 3 7 G O S/M O S INTEGRATED CIRCUIT h c c /h c f . 41C 7929225 S G S 0015132 0 I 09153 Oy 40i74B T-4 6 -0 7 -1 0 S E M IC O N D U C T O R C Q R P HEX " D " - TYPE FLIP-FLOP • • • • • • S T A N D A R D IZ E D S Y M M E T R IC A L O U T P U T C H A R A C T E R IS T IC S


    OCR Scan     		PDF aD1513a T-46-07-10 40174B 16-lead fl-06 40174B 40174 40174BE SGS semiconductor 40174BD

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE D E V E L O P M E N T DATA □bE D • bbS3T31 0015147 b ■ PZ2327B15U This data sheet contains advance information and specifications are subject to change without notice. T-c 3 % - Q I MICROWAVE POW ER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended for use in a common-base, class-C broad­


    OCR Scan     		PDF bbS3T31 PZ2327B15U bb53131 bfci53T31 7Z2412$ D01S1S5

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D • bbSBTBl 0015121 T I _ J V PVB42004X T ~ Z 1 - 01 MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-B power amplifier up to 4,2 GHz. Features:


    OCR Scan     		PDF PVB42004X

    Untitled

    Abstract: No abstract text available
    Text: b3E • b2M^ae? MITSUBISHI 0015105 DGTL 527 ■ H IT 3 M ITSU B ISH I BIPOLAR DIGITAL ICs M 54574P L06IC 4 -U N IT 700m A TR A N S IS T O R ARRAY W IT H C L A M P DIODE DESCRIPTION The M 54574P is a semiconductor integrated circuit, con­ sisting of four transistor


    OCR Scan     		PDF 54574P L06IC) 54574P 700mA) -75TC

    Untitled

    Abstract: No abstract text available
    Text: • b3 E 1 ,2 4 1 6 2 7 001517b MITSUBISHI f i ß? « H IT B M IT S U B IS H I BIPO LAR D IG IT A L IC , M 54604P DÉTL LOGIC DUAL PERIPHERAL PO SITIVE NOR DRIVER DESCRIPTION M54604P is a semiconductor integrated circuit containing 2 PIN CONFIGURATION (TOP VIEW)


    OCR Scan     		PDF 001517b 54604P M54604P 500ns, 300mA 100mA

    LM058

    Abstract: No abstract text available
    Text: HITACHI / OPTOELECTRONICS blE K • m i b S O S 0015155 035 ■ HIT1! *6 HITACHI LM 058 -r*f{ - 3 1 ■ 40 character x 1 line ■ Controller LSI H D 44780 is built-in (See page 115). IN T E R N A L PIN CONNECTION ■ +5V single power supply M E C H A N IC A L D A TA (Nominal dimensions)


    OCR Scan     		PDF G01242b DaiE427 LM058