Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-2 GHz Product Features • Wideband, DC to 2 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-2+ CASE STYLE: AF190
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AF190
2002/95/EC)
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-2 GHz Product Features • Wideband, DC to 2 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629
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AF190
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MMIC era
Abstract: MMIC MAR-6 gali-84 TB-432-8A TCCH-80A TB-409-39 Mini-Circuits TB-409-39 MAV-11SM TB-409-74 MCL MAR-6
Text: MMIC Test Boards: Instructions for Use AN-60-036 1.0 Introduction Mini Circuits manufacture a wide range of 4-pin MMIC surface-mount and drop-in amplifiers. Family of test boards, for evaluating these devices, has been designed as to make them easy to use by customer.
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AN-60-036)
Gener412-11+
TB-412-11A+
TB-412-11B+
LEE-19+
LEE-29+
LEE-39+
LEE-49+
LEE-59+
TB-413-19+
MMIC era
MMIC MAR-6
gali-84
TB-432-8A
TCCH-80A
TB-409-39
Mini-Circuits TB-409-39
MAV-11SM
TB-409-74
MCL MAR-6
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A02 monolithic amplifier
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-2 GHz Product Features • Wideband, DC to 2 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629
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AF190
2002/95/EC)
A02 monolithic amplifier
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A02 monolithic amplifier
Abstract: TB-414-2 AF190 marking A02
Text: Surface Mount Monolithic Amplifier DC-2 GHz Product Features • Wideband, DC to 2 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-2+ CASE STYLE: AF190
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Original
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PDF
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AF190
2002/95/EC)
A02 monolithic amplifier
TB-414-2
AF190
marking A02
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-2 GHz Product Features • Wideband, DC to 2 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629
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Original
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PDF
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AF190
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-2 GHz Product Features • Wideband, DC to 2 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629
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PDF
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AF190
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Untitled
Abstract: No abstract text available
Text: SAM SUN G E L E C T R O N I C S INC LM393 ì> 42E m ?Tb4142 ODG^Bfi? 7 LINEAR INTEGRATED CIRCUIT DUAL DIFFERENTIAL COMPARATOR The LM393 consists of two independent voltage comparator is design ed to operate from a single power supply over a wide voltage range.
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LM393
Tb4142
LM393
LM393N
LM393D
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Untitled
Abstract: No abstract text available
Text: S A M S U N G E L E C T R O N I C S INC b7 E D • 7 Tb4142 KMM5361000B/BG 0015150 SGÖ H i S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5361000B is a 1M bits x 36 Dynam ic RAM high density memory module. The Samsung
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Tb4142
KMM5361000B/BG
KMM5361000B
20-pin
72-pin
110ns
KMM5361000B-7
130ns
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IRFS150
Abstract: 250M IRFS151 diode deg avalanche zo 150 60
Text: N-CHANNEL POWER MOSFETS IRFS150/151 FEATURES • Low er Rds<on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRFS150/151
IRFS150
IRFS151
7Tbm42
250M
diode deg avalanche zo 150 60
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E 3 • 7 ^ 4 1 4 2 DDIBTTB TSG PRELIMINARY KM424C257 SMGK CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K x 4 b its RAM port 512 x 4 b its SAM port • Performance The Samsung KM 424C 257 is a CMOS 2 5 6 K X 4 bit Dual
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KM424C257
125ns
28-PIN
0D13625
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KM418C256/L/SL-7
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D KM418C256/L/SL • 7 T b 4 m 2 GGlBMTb 12=5 « S U G K CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM418C256/L/SL is a C MOS high speed 262,144 b it x 18 D ynam ic Random A ccess M em ory. Its
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KM418C256/L/SL
KM418C256/L/SL
KM418C256/L/SL-7
KM418C256/L/SL-8
KM418C256/L/SL-10
130ns
150ns
100ns
180ns
KM418C256/L/SL-7
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Untitled
Abstract: No abstract text available
Text: KM 4 1 6 C 1 2 0 0 B T CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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DQ0-DQ15
00303bS
KM416C1200BT
Tb4142
KM416C1200BT)
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IC 74142
Abstract: No abstract text available
Text: -5J SAMSUNG K M 6 8 B 1001 \0 ELECTRONICS 131,072 WORD X 8 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES The KM68B1001 is a 1,048,576-bit high speed static random access memory organized as 131,072 words by 8 bit. The device is fabricated using Samsung's advanced BiCMOS process and designed or
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KM68B1001
576-bit
400mil
32-pin
KM68B1001P/J-12
180mA
KM68B1001P/J-15
160mA
KM68B1001
IC 74142
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A30Z
Abstract: 3224B V256D ttl 74112
Text: KM416V256DJ CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mods CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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16V256DJ
256Kx16
KM416V256DJ
Q0322bt.
A30Z
3224B
V256D
ttl 74112
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samsung p28
Abstract: No abstract text available
Text: K S O l 19 Multimedia ELECTRONICS VIDEO ENCODER The KS0119/KS0119Q2 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either NTSC or PC monitors. There are two data input channels
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KS0119/KS0119Q2
KS0119Q2
KS0119.
S0119)
GD33521
D033522
samsung p28
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96-Seg
Abstract: No abstract text available
Text: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features
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KS57C2408
KS57C2408
up-to-12-digit
16-bit
80-pin
002b535
71b4142
D0SbS37
96-Seg
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Untitled
Abstract: No abstract text available
Text: KM416V1000BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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KM416V1000BT
1Mx16
1000BT)
7Tb4142
GG30b2b
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Untitled
Abstract: No abstract text available
Text: KM44C1003C/CL/CSL CMOS DRAM 1M x4B it CMOS Quad CAS RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM44C1003C/CIVCSL-5 50ns 13ns 90ns KM44Ú1003C/CL/CSL-6 60ns 15ns 110ns KM44C1003C/CL/CSL-7 70ns 20ns 130ns KM44C1003C/CL/CSL-8
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KM44C1003C/CL/CSL
KM44C1003C/CIVCSL-5
1003C/CL/CSL-6
110ns
KM44C1003C/CL/CSL-7
130ns
KM44C1003C/CL/CSL-8
150ns
cycle/16m
7TL4142
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Untitled
Abstract: No abstract text available
Text: KM6161002 CMOS SRAM ELECTR O NICS 6 4 K x 1 6 B H High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002-15 : 230 mA(Max.)
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KM6161002
KM6161002-15
KM6161002-17
KM6161002-20
KM6161002
576-bit
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • TlbHlMS 00132^3 44b »SflGK KM44C1010A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fasi Page Mode Write Per Bit Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tcAC I rc 70ns 20ns 130ns KM44C1010A-8 80ns 20ns
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KM44C1010A
130ns
KM44C1010A-8
150ns
KM44C1010A-10
100ns
180ns
KM44C1010A-7
KM44C1010A
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Untitled
Abstract: No abstract text available
Text: S M P - 1 2 1 3 4 Bit Digital Attenuator 1, 2, 4, & 8 dB Bits S s m îü s s H ! : r o ‘. v fiv s Sem iconductor A pril 1 9 9 6 DC • 3.0G H z Description rj« hiv.- • : ■. s r.'j" pcriormance Gallium Arsenide GaAs Monolithic Microwave Integrated Circuit (MMIC)
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SMP-12103
BOO/664-2748
Tb4142
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC m 42E D 7^4142 KMM581000B GGlüMlö ñ «SPICK DRAM MODULES i'T 'Q U ^ n 1MX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B Is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung
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KMM581000B
581000B
KMM581
KM41C1OOOBJ
20-pln
30-pin
581000B-
130ns
150ns
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Untitled
Abstract: No abstract text available
Text: 2N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCeo =40V • Collector Dissipation: Pc max =625mW T O -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage
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2N3903/3904
625mW
2N3903
2N3904
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