Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19848 D Optoelectronic Specifications_ T - u /j. HARRIS SEMIC0N» SECTOR 37E D 430SS71 G02731Q 1 Photon Coupled Isolator C N Y 4 8 M IL L I M E T E R S SW 80L- Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier
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430SS71
G02731Q
CNY48
S-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: HARRIS SEtllCOND SECTOR ÜJ H A R R IS ItE D • 430SS71 0015113 5 ■ H D -15530/883 CMOS Manchester Encoder-Decoder June 1989 Pinouts Features • T h is C irc u it is P ro c e s s e d in A c c o rd a n c e to M il- S t d - 8 8 3 a n d is Fully HD1-1 5 5 3 0 /8 8 3 CERAMIC DIP
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430SS71
EC00ERCUC
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR TS D e | 430SS71 □ 0 1 Q b 4 Iì 0 H M -6 5 1 8 h a r r is CO in <o 1024 x 1 CMOS RAM Pinout Features TOP VIEW • H M -6 1 0 0 C o m p a tib le 5 0 jiW Max. • L o w S ta n d b y P o w e r. • L o w O p e ra tin g P o w e r
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430SS71
43Q2S71
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PAA 725
Abstract: HA7-5147-2 HA2-5147-2
Text: HARRIS SEHICOND SECTOR blE D 430SS71 004b?0'i T4ñ _ HAS HA-5147 iS 3 H A R R I S W S E M I C O N D U C T O R Ultra-Low Noise Precision High Slew Rate Wideband Operational Amplifier March 1993 Features Description • H
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430SS71
HA-5147
HA-5147
120MHz)
800V/mV)
l26dB)
002uWDiv.
08jiVP^
004b71b
HA-5147,
PAA 725
HA7-5147-2
HA2-5147-2
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TRANSISTOR CD 2897
Abstract: GFH601 k 2897 transistor 340 opto isolator 100J1
Text: HARRIS SEMICOND MÊimmmmtiÈÊmâiiim SECTOR 37E D B 430SS71 DG2732b S E l HAS Optoelectronic Speciticatio n s. Photon Coupled Isolator GFH601 Ga As Solid State Lamp & NPN Silicon Photo-Transistor The G E Solid State GFH601 consists of a gallium arsenide infrared
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430SS71
DG2732b
GFH601
GFH601
92cs-42862
92cs-428m
TRANSISTOR CD 2897
k 2897 transistor
340 opto isolator
100J1
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Untitled
Abstract: No abstract text available
Text: HARRIS SEmCOND SECTOR SbE D H 430SS71 □ □M31bci ESS B H A S HI-7153/883 ¡33 8-Channel, 10-Bit, High Speed July1992 Sampling A/D Converter Features Description • This Circuit Is Processed in Accordance to Uil-Std883 and is Fully Conformant Under the Provisions of
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430SS71
M31bc
HI-7153/883
10-Bit,
July1992
Uil-Std883
20kHz
150mW
MH-M-38510Compiant
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Untitled
Abstract: No abstract text available
Text: HARRIS SENICÔND SECTOR j H A R R IbE D • 43G2271 0014275 4 ■ T-79-07-/0 H A -5 0 0 4 /8 83 I S 100M Hz Current Feedback Amplifier June 1989 Features Description • This Circuit is Processed in Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of
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43G2271
T-79-07-/0
HA-5004/883
100MHz
65MHz
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HARRIS 82C54
Abstract: CS82C54-10 P82C54
Text: HARRIS SEMICOND SECTOR MbE D • M302E71 DD3flb'fll 3 « H A S R O C ' R A H A R R I S S E M I C O N D U C T O R i / i f a T - 3 Z .- 3 3 - 0 5 February CM OS Programmable Interval Timer 1992 Features Description • 10MHz or 8MHz Clock Input Frequency The Harris 82C54 is a high performance C M O S Programma
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M302E71
82C54
16-bit
82C54)
10MHz
82C54-10)
80C86,
80C88,
HARRIS 82C54
CS82C54-10
P82C54
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Untitled
Abstract: No abstract text available
Text: HARRIS H S E M I C O N D U C T O R P 2 1 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver October 1995 Description Features • I Drives N-Channel MOSFET Half Bridge The H IP 2100 is a high frequency, 100V Half Bridge N-Channel M O S F E T driver IC, available in 8 lead plastic
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00V/2A
116VDC
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430SS71
Abstract: No abstract text available
Text: HARRI S SEfllCOND SECTOR 4 0E D • 4302271 0032532 ~ nri HARRIS -/W T-A* r - i 5 ~ w D ■¡HAS - \ " ] ' H C - 5 5 Q 2 Â \ sue Subsciber Line Interface Circuit W "* August 1991 \ Features Description • Monolithic Integrated Device' ” • Dl High Voltage Process
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50/60H
1000ns
430SS71
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR SflE » H a r r is U U SEM ICO N D UCTOR REGISTRATION PENDING Currently Available as FRK150 D, R, H • 43D2271 0045725 2T3 « H A S 2N7291D, 2N7291R 2N7291H Radiation Hardened N-Channel Power MOSFETs December1992 Features Package
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43D2271
FRK150
2N7291D,
2N7291R
2N7291H
T0-204AE
100KRAD
300KRAD
1000KRAD
3000KHAD
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Untitled
Abstract: No abstract text available
Text: HARR IS SEPIICOND SE CT OR m 5ÔE D • M30 2 27 1 0 0 4 3 ^ 3 3 3S7 « H A S HCS10MS HARRIS S E M I C O N D U C T O R Radiation Hardened Triple 3-Input NAND Gate Decem ber 1992 Pinouts Features ~ - P 4 3 - Z 1 14 PIN CERAMIC DUAL-IN-LINE MIL-STD-183S, DESIGNATOR CDIP2-T14, LEAD FINISH C
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HCS10MS
MIL-STD-183S,
CDIP2-T14,
430SS71
05A/cm2
100nmx100
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Untitled
Abstract: No abstract text available
Text: æ ACSOOMS HARRIS S E M I C O N D U C T O R Radiation Hardened Quad 2-Input NAND Gate May 1995 Features Pinouts 14 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR, CDIP2-T14, LEAD FINISH C TOP VIEW 1.25 Micron Radiation Hardened SOS CMOS Total Dose 300K RAD Si
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MIL-STD-1835
CDIP2-T14,
1CT10
1-800-4-HARRIS
00b0b31
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HARRIS CORPORATION HA3-2529-5
Abstract: 2310 signal conditioning amplifier HARRIS 2529 43Q5271 AAW2
Text: il HARRIS blE D HARRIS SEniCON» SECTOR U U Uncompensated, High Slew Rate High Output Current, Operational Amplifier Features Description High Slew R at*. ISOV^is Fast
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430SS71
G04b477
HA-2529
HA-2529
50V/jxs
200ns)
20MHz
004b4fl3
HARRIS CORPORATION HA3-2529-5
2310 signal conditioning amplifier
HARRIS 2529
43Q5271
AAW2
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CD4062
Abstract: CD4062A 430EH
Text: 37E ì> HARRIS SEMICOND SECTOR 4305271 0021470 3875081 G E SOLID STATE O 1E 13664 IHAS D T I I CD4062A Types CMOS 200-Stage Dynamic Shift Register MAXIMUM RATINGS, Absoluta-Maxlmum Values: TEMPERATURE RANGE T ^ g . -«5to+1SO *C
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CD4062A
200-Stage
CD4062
430EH
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IS2076-E
Abstract: No abstract text available
Text: £8 HU977, CXA1977 10-Bit 20 MSPS A/D Converter February 1996 Features Description • Maximum Operating Speed. 20 MSPS Min The H11977, CXA1977 is an 10-bit 20 MSPS 2-step parallel A/D converter tor video signal processing. • R e s o lu tio n . 10-Bit
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HU977,
CXA1977
10-Bit
H11977,
CXA1977
10-Bit
160mW
10MHz
1-800-4-HARRIS
IS2076-E
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ha5025
Abstract: No abstract text available
Text: 430EE71 005231^ TIT «HAS HA5025 Quad 125 MHz Video Current Feedback Amplifier March1994 Features • Description The HA5025 is a wide bandwidth high slew rate quad ampli fier optimized for video applications and gains between 1 and 10. It is a current feedback amplifier and thus yields less
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430EE71
HA5025
rch1994
HA5025
1-800-4-HARRIS
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5018 8p
Abstract: IHS012 5014 ti
Text: IH5009-5012, 5014, 5016-5020, 5022, 5024 HARRIS SEMICOND 43E SECTOR D • 4302271 003b77b *4 B 9 H A S IH5009-5012, 5014, 5016-5020, 5022, 5024 H A R R IS S E M I C O N D U C T O R \ - 5 Virtual Ground Analog Switch l - U GENERAL DESCRIPTION FEATURES The IH5009 series o f analog sw itches w ere designed to
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003b77b
IH5009-5012,
IH5009
5018 8p
IHS012
5014 ti
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Untitled
Abstract: No abstract text available
Text: æ HCTS14MS HARRIS S E M I C O N D U C T O R Radiation Hardened HEX Inverting Schmitt Trigger August 1995 Features Pinouts 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW Total Dose 200K RAD (Si)
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HCTS14MS
MIL-STD-1835
CDIP2-T14
430SS71
05A/cm2
100nm
x100nm
HCTS14
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HI1DAC80V5
Abstract: schema DIGITAL TO ANALOG
Text: HARRIS SENICOND 43E D SECTOR • 4305271 GGBbbSl b " P S e - c ft- \ 7- H I-D Ä C 80V HARRIS 12Bit, Low Cost, M onolithic Digital to Analog Converter HI-DAC80V June 1989 P in o u t Fe a tu re s • D A C 8 0 V A lte rn a te S o u r c e TOP VIEW • M o n o lith ic C o n s tru c tio n
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12Bit,
JUNCT10N
HI-DAC80V
DAC80
DAC80.
HI1-DAC80V-5
HI3-DAC80V-5
HI1DAC80V5
schema DIGITAL TO ANALOG
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