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    0.05 OHM Price and Stock

    Riedon S-1 0.005 OHM 5%

    RES 0.005 OHM 5% 1/2W 1913
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    DigiKey S-1 0.005 OHM 5% Reel 300
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    Riedon MS-3 0.005 OHM 3%

    RES 0.005 OHM 3% 3W AXIAL
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    DigiKey MS-3 0.005 OHM 3% Bag
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    Riedon MS-5 0.005 OHM 3%

    RES 0.005 OHM 3% 5W AXIAL
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    DigiKey MS-5 0.005 OHM 3% Bag
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    Vishay Intertechnologies CW-10 0.5OHM 5% B12

    Resistor, Ceramic, 0.5 Ohm, 10W, 5%; Resistance:0.5Ohm; Product Range:Cw Series; Power Rating:10W; Resistance Tolerance:± 5%; Resistor Case/Package:Axial Leaded; Voltage Rating:-; Resistor Technology:Wirewound; Product Width:- Rohs Compliant: No |Vishay CW-10 0.5OHM 5% B12
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    Newark CW-10 0.5OHM 5% B12 Bulk 100
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    SEI Stackpole Electronics Inc MR-10-0.05-1%-R

    Res Metal Film 0.05 Ohm 1% 10W ±50ppm/°C to ±400ppm/°C Molded AXL T/R
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    Onlinecomponents.com MR-10-0.05-1%-R 250
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    Find more 0.05 OHM price and stock on Findchips.com

    0.05 OHM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rd07mvs1b101

    Abstract: 3M Touch Systems D07MVS1
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05


    Original     		PDF RD07MVS1B 175MHz 520MHz RD07MVS1B RD07MVS1 175MHz) 520MHz) rd07mvs1b101 3M Touch Systems D07MVS1

    RD07MVS1

    Abstract: RD07MVS1B T112 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05


    Original     		PDF RD07MVS1B 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS1B RD07MVS1 T112 3M Touch Systems

    3M Touch Systems

    Abstract: transistor c 828
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 2.0+/-0.05 2 3.5+/-0.05


    Original     		PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 175MHz, 175MHz) 520MHz) 3M Touch Systems transistor c 828

    RD02MUS1B

    Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 2.0+/-0.05 2 3.5+/-0.05


    Original     		PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 T112 mosfet 4501 3M Touch Systems

    RD02MUS2

    Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
    Text: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


    Original     		PDF RD02MUS2 175MHz 520MHz RD02MUS2 rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882

    RD02MUS1B

    Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


    Original     		PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 T112 mosfet 4501 3M Touch Systems

    RD02MVS1

    Abstract: RD02MUS1B RD02MUS1 T112 mosfet 1412 6D20 mosfet 4501
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


    Original     		PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 RD02MVS1 T112 mosfet 1412 6D20 mosfet 4501

    Untitled

    Abstract: No abstract text available
    Text: 400V 220 F 85 400V 220 F 85 LSR Series °C °C °C °C °C °C 87 LSR Series STANDARD RATINGS Snap-in PCB T ype V 400 250 uF 45 30x40 0.05 1.50 55 35x40 0.05 1.70 75 35x40 0.05 1.98 82 35x50 0.05 2.00 100 35x40 0.05 1.90 110 35x40 0.05 2.00 165 35x45 0.05


    Original     		PDF 30x40 35x40 35x50 35x45

    RD07MVS2

    Abstract: RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05


    Original     		PDF RD07MVS2 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS2 RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434

    3M Touch Systems

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05


    Original     		PDF RD07MVS2 175MHz 520MHz RD07MVS2 175MHz) 520MHz) 3M Touch Systems

    MAR 527 transistor

    Abstract: RD07MVS1B-101 transistor MAR 439 RD07MVS1B RD07MVS1 T112 mar 640 MOSFET TRANSISTOR mar 649 MOSFET TRANSISTOR T06 transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in


    Original     		PDF RD07MVS1B 175MHz 520MHz RD07MVS1B-101, MAR 527 transistor RD07MVS1B-101 transistor MAR 439 RD07MVS1B RD07MVS1 T112 mar 640 MOSFET TRANSISTOR mar 649 MOSFET TRANSISTOR T06 transistor

    RD07MVS1B

    Abstract: transistor t06 19 RD07MVS1B-101 RD07MVS1 T112
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in


    Original     		PDF RD07MVS1B 175MHz 520MHz RD07MVS1B-101, RD07MVS1B transistor t06 19 RD07MVS1B-101 RD07MVS1 T112

    RD04HMS2

    Abstract: JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
    Text: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING


    Original     		PDF RD04HMS2 175MHz, 950MHz, 14dBtyp. 950MHz UHF/890-950MHz RD04HMS2 JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445

    RD04HMS2

    Abstract: Handling Precautions for MOSFET 043mm 14dBtyp
    Text: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING


    Original     		PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz Handling Precautions for MOSFET 043mm 14dBtyp

    RD07MVS2

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)


    Original     		PDF RD07MVS2 175MHz 520MHz RD07MVS2 175MHz) 520MHz) Oct2011

    RD07MVS1

    Abstract: RD07MVS1-101 T112 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


    Original     		PDF RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) RD07MVS1-101 T112 3M Touch Systems

    a 1757 transistor

    Abstract: 78s12 GRM40 RD12MVS1 T112
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor 78s12 GRM40 T112

    mosfet marking 12W

    Abstract: 12w marking GRM40 RD12MVS1 T112
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) mosfet marking 12W 12w marking GRM40 T112

    a 1757 transistor

    Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 T112 MOSFET 12W mosfet 4816 mosfet 1208

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)


    Original     		PDF RD07MVS2 175MHz 520MHz RD07MVS2 520MHz 175MHz) 520MHz)

    78s12

    Abstract: RD12MVS1-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) 78s12 RD12MVS1-101

    RD07MVS1-101

    Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


    Original     		PDF RD07MVS1 175MHz 520MHz RD07MVS1 RD07MVS1-101, RD07MVS1-101 T112 ID-750 RD07M D07MVS1 3M Touch Systems

    RD07MVS1

    Abstract: ic 453 8p
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor


    Original     		PDF RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) ic 453 8p

    RGI74A

    Abstract: No abstract text available
    Text: ENG. NO SOA-73100-0248 22.00 REF. 0 .8 6 6 9.0 (0.354) 0' 2.56*0.05 (0 . 101) JL NO. A 3.86*0.05 (0.152) A® 3.12*0.05 (0.123) < F È f I WL L- > 6.50 (0.256) SI000257.DGN EDP f A FERRULE 1.70*0.05 A (0.067) SIMILAR ITEM 50 OHM SMB ASSEMBLY NO. S1000248.DGN


    OCR Scan     		PDF SOA-73100-0248 SI000257 S1000248 SDA-73 RGI74A, RGI74A