Untitled
Abstract: No abstract text available
Text: TGA2216 0.1 – 3.0GHz 12W GaN Power Amplifier Applications • Commercial and military radar Communications Electronic Warfare Product Features Functional Block Diagram Frequency Range: 0.1 – 3.0GHz PSAT: 41dBm at PIN = 27dBm
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TGA2216
41dBm
27dBm
34dBm
120mA
33dBm/tone:
-30dBc
-35dBc
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3570 1301 054
Abstract: 3570 1301 "15 GHz" power amplifier 41dBm 3570 1301 053 Eudyna Devices power amplifiers ED-4701 FMM5822X 3570 1301 051 40938 power amplifier mmic
Text: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three
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FMM5822X
41dBm
FMM5822X
3570 1301 054
3570 1301
"15 GHz" power amplifier 41dBm
3570 1301 053
Eudyna Devices power amplifiers
ED-4701
3570 1301 051
40938
power amplifier mmic
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power amplifier mmic
Abstract: No abstract text available
Text: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three
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FMM5822X
41dBm
FMM5822X
power amplifier mmic
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ED-4701
Abstract: FMM5822X "15 GHz" power amplifier 41dBm power amplifier mmic
Text: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three
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FMM5822X
41dBm
FMM5822X
ED-4701
"15 GHz" power amplifier 41dBm
power amplifier mmic
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3570 1301
Abstract: 3570 1301 053 3570 1301 051
Text: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION
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FMM5822X
41dBm
FMM5822X
3570 1301
3570 1301 053
3570 1301 051
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3570 1301 054
Abstract: FMM5822X 3570 1301 ED-4701 MTTF class E power amplifier 13.56 40938 power amplifier mmic
Text: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three
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FMM5822X
41dBm
FMM5822X
3570 1301 054
3570 1301
ED-4701
MTTF
class E power amplifier 13.56
40938
power amplifier mmic
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Untitled
Abstract: No abstract text available
Text: RFDA2046 RFDA2046Digital Controlled Variable Gain Amplifier 2000 MHz to 2800 MHz DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 2000MHz TO 2800MHz High OIP3/P1dB=+41dBm/ 28dBm Single +5V Supply Small 28-Pin, 6.0mmx6.0mm, MCM Power-up Programming GND
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RFDA2046
RFDA2046Digital
2000MHz
2800MHz
28-Pin,
41dBm/
28dBm
GRM155R71C104KA88D
GRM155R61A105KE15D
RMC1/16SJPTH
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MMIC X-band amplifier
Abstract: No abstract text available
Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF
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RFHA5966A
RFHA5966AX
41dBm
RFHA5966A
Radar023
1N4148,
DS111023
MMIC X-band amplifier
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RF Power Amplifier 125KHz
Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF
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RFHA5966AX
RFHA5966A
4500m
4000m
41dBm
RFHA5966A
1N4148,
RF Power Amplifier 125KHz
1n4148 die
GAAS FET AMPLIFIER x-band 10w
x-Band Hemt Amplifier
95GHZ
10Ghz RF Power 10w amplifier
"15 GHz" power amplifier 41dBm
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RF3315
Abstract: IPC-SM-782
Text: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features 1 2 3 RF OUT 4 GND 200MHz to 3GHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at 900MHz
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RF3315
RF3315Broadband
200MHz
41dBm
900MHz
25dBm
RF3315
DS091103
IPC-SM-782
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C1005C0G1H101JT000F
Abstract: Murata Moca 0402CS-5N6XJL
Text: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features 1 2 3 RF OUT GND 4 200MHz to 2200MHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at
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RF3315Broadband
RF3315
200MHz
2200MHz
41dBm
900MHz
25dBm
900MHz
RF3315
C1005C0G1H101JT000F
Murata Moca
0402CS-5N6XJL
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Untitled
Abstract: No abstract text available
Text: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features 1 2 3 RF OUT GND 4 200MHz to 2200MHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at
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RF3315
RF3315Broadband
200MHz
2200MHz
41dBm
900MHz
25dBm
RF3315
DS120530
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52E5
Abstract: TriQuint RO4003 TGA4530 "15 GHz" power amplifier 41dBm
Text: TGA4530-SM 17 - 21 GHz High Output TOI Packaged Amplifier Key Features • • • • • • • • Frequency Range: 17 - 21 GHz 41dBm Nominal Output TOI 21 dB Nominal Gain 29 dBm Nominal P1dB 12 dB Nominal Return Loss Bias 6 V @ 825 mA 4 x 4 QFN with 20 leads
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TGA4530-SM
41dBm
825mA
TGA4530
21GHz
52E5
TriQuint
RO4003
"15 GHz" power amplifier 41dBm
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Fujitsu GaAs FET application note
Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Text: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was
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fcs64
magS22
angS22
Fujitsu GaAs FET application note
atc100a
FLL810
Hp 2564
FLL810IQ-3C
IMT-2000
S03A2750N1
RFP 1026 resistor
fujitsu x band amplifiers
"15 GHz" power amplifier 41dBm
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Untitled
Abstract: No abstract text available
Text: MECX10W-2 X-Band GaAs pHEMT High Power Amplifier Main Features VG VD 0.25µm GaAs pHEMT Technology 8.5 – 10.8 GHz full performances Frequency Range Saturated Output Power > 11W PAE = 32% - 43% Small Signal Gain > 21 dB VG VD Bias: Vd = 8.5V, Id = 2.6A, Vg = -0.43V Typ.
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MECX10W-2
MECX10W-2
22dBm
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Untitled
Abstract: No abstract text available
Text: SPA-120-41-01-SMA DATA SHEET 41 dB Gain Medium Power High Gain Amplifier at 1 Watt Operating From 8 GHz to 12 GHz with SMA SPA-120-41-01-SMA is a 1 W X-band high gain coaxial power amplifier in the 8 to 12 GHz frequency range. The amplifier offers 30 dBm of P1db min and
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SPA-120-41-01-SMA
SPA-120-41-01-SMA
-gain-amplifier-1watt-spa-120-41-01-sma-p
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Untitled
Abstract: No abstract text available
Text: TGA2527-SM Ku-Band Power Amplifier Applications • Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 12.5 – 15.5 GHz TOI: 41 dBm Power: 31.5 dBm Psat, 30 dBm P1dB
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TGA2527-SM
TGA2527-SM
41dBm
20dBm
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"15 GHz" power amplifier 41dBm
Abstract: No abstract text available
Text: TGA2527-SM Ku-Band Power Amplifier Applications Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 12.5 – 15.5 GHz TOI: 41 dBm Power: 31.5 dBm Psat, 30 dBm P1dB Gain: 25 dB Return Loss: 10 dB NF: 7.5 dB
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TGA2527-SM
TGA2527-SM
41dBm
20dBm
"15 GHz" power amplifier 41dBm
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Untitled
Abstract: No abstract text available
Text: TGA2527-SM Ku-Band Power Amplifier Applications Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 12.5 – 15.5 GHz TOI: 41 dBm Power: 31.5 dBm Psat, 30 dBm P1dB Gain: 25 dB Return Loss: 10 dB NF: 7.5 dB
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TGA2527-SM
TGA2527-SM
41dBm
20dBm
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"15 GHz" power amplifier 41dBm
Abstract: AN0017 MO-220
Text: Advance Information: AI1013 QFN Packaged 13-15.5GHz High Power Amplifier D1 GND D2 NC D3 NC D4 GND GaAs Monolithic Microwave IC 32 31 30 29 28 27 26 25 NC 3 22 NC GND 4 21 GND RFIN 5 20 RFOUT GND 6 19 GND NC 7 18 NC NC 8 17 NC 9 10 11 12 13 14 15 16 GND NC
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AI1013
AI10131270
ES-CHA6252-QFG
"15 GHz" power amplifier 41dBm
AN0017
MO-220
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Untitled
Abstract: No abstract text available
Text: CHA6252-QFG 13-15.5GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6252-QFG is a four stages monolithic GaAs high power circuit that produces more than 2 Watt output power. It is designed for commercial communication
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CHA6252-QFG
CHA6252-QFG
41dBm
32L-QFN5x5
DSCHA6252-QFG2355
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Untitled
Abstract: No abstract text available
Text: TGA2583 2.7 – 3.7GHz 10W GaN Power Amplifier Applications • Commercial and military radar Product Features Functional Block Diagram Frequency Range: 2.7 – 3.7GHz PSAT: 40dBm at 25V PAE: 54% Small Signal Gain: 33dB Bias: VD = 25-32V CW or Pulsed , IDQ = 175mA, VG
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TGA2583
40dBm
5-32V
175mA,
TGA2583
TQGaN25)
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Untitled
Abstract: No abstract text available
Text: MAGX-011087 GaN Wideband Power Amplifier, 28 V, 15 W 20 - 1000 MHz Features • Preliminary - Rev. V1P Functional Schematic 28 V Operation >55% High Drain Efficiency 50 Ω Input / Output Matched Lead-Free 5 x 6 mm 8-lead PDFN Package Halogen-Free “Green” Mold Compound
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MAGX-011087
MAGX-011087
MAAP-011068
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AM003040SF-2H
Abstract: No abstract text available
Text: High Power Amplifier Module 10 – 3000MHz, 22dB, 10 Watts AM003040SF-2H January 2011 REV 4 DESCRIPTION AM003040SF-2H is an ultra-broadband High Power Amplifier designed for instrumentation, communication and Jamming applications. It operates from 10MHz to 3000MHz and typically delivers more than 10 watts 40dBm CW
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3000MHz,
AM003040SF-2H
AM003040SF-2H
10MHz
3000MHz
40dBm)
3000MHz
41dBm,
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