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DSA0064779.pdf
Manufacturer
Cree
Partial File Text
CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree's CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
Datasheet Type
Original
ECAD Model
Part Details
Part pricing, stock, data attributes from Findchips.com
DSA0064779.pdf preview
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cree driver
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