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    DSASW00145647.pdf

    • Cree
    • AWR® Success Story Cree Speeds Development of High-Performance GaN Doherty Amplifiers by 70% Microwave Office Capabilities Provide First-Pass Design Success of Complex 2.1-GHz Circuits Appl
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    DSASW00145647.pdf preview Download Datasheet

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    CDPA21480 CGH21240F digital Pre-distortion Gan on silicon transistor LDMOS NONLINEAR MESFET Microwave Devices NONLINEAR MODEL LDMOS silicon carbide

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