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DSA0064778.pdf
Manufacturer
Cree
Partial File Text
CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree's CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high
Type
Original
ECAD Model
Part Details
Part pricing, stock, data attributes from Findchips.com
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