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    DSA00261547.pdf by Infineon Technologies

    • IPB35CN10N G IPI35CN10N G OptiMOS®2 Power-Transistor IPD33CN10N G IPP35CN10N G IPU33CN10N G Product Summary Features V DS 34 m ID · Excellent gate charge x R DS(on) p
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    33cn10n 35CN10N IPD33CN10N IPP35CN10N
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