DSA00207510.pdf by IXYS

Partial File Text IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A 66 m RDS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ =
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52n30p IXTQ52N30P IXTT52N30P mosfet IXTQ52N30P