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    transistor NEC D 587

    Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage


    Original     		PDF 2SC4885 transistor NEC D 587 transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586

    sky65116

    Abstract: NMT450 uhf linear amplifier module TW14-D621 TAJA106M GSM450 GSM480 TAJA106M006R NMT-450 t 430 nf 65 nf 06
    Text: data sheet SKY65116: 390–500 MHz Linear Power Amplifier Features W  ideband frequency operation: 390–500 MHz High linearity: OIP3 43 dBm l High efficiency: 40% PAE l High gain: 35 dB l P 1 dB = 32.5 dBm l Single DC supply: 3.6 V l Internal RF match and bias circuits


    Original     		PDF SKY65116: GSM450 GSM480 NMT450 12-pin J-STD-020 SKY65116 NMT450 uhf linear amplifier module TW14-D621 TAJA106M GSM480 TAJA106M006R NMT-450 t 430 nf 65 nf 06

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY65116: 390–500 MHz Linear Power Amplifier Features ฀฀Wideband฀frequency฀operation:฀390–500฀MHz ฀High฀linearity:฀OIP3฀43฀dBm l฀High฀efficiency:฀40%฀PAE l฀High฀gain:฀35฀dB l฀P 1฀dB฀=฀32.5฀dBm


    Original     		PDF SKY65116: 12-pinà J-STD-020

    BGA420

    Abstract: EHA07385
    Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3  Cascadable 50 -gain block 4  Unconditionally stable  Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA  Noise figure NF = 2.3 dB at 1.8 GHz 1  Reverse isolation > 28 dB and


    Original     		PDF BGA420 25-Technologie VPS05605 EHA07385 OT343 Jan-29-2002 BGA420 EHA07385

    63 1826 0306

    Abstract: zo 103 ma 2SC5702 DSA003640
    Text: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-1414 Z 1st. Edition Mar. 2001 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz


    Original     		PDF 2SC5702 ADE-208-1414 63 1826 0306 zo 103 ma 2SC5702 DSA003640

    R07DS0095EJ0800

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		PDF RQA0011DNS R07DS0095EJ0800 WSON0504-2: PWSN0002ZA-B WSON0504-2> RQA0011â R07DS0095EJ0800

    RQA0011

    Abstract: RQA0011DNS RQA0004 R07DS0095EJ0800 PG890 RQA0011DNSTB-E
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		PDF RQA0011DNS WSON0504-2: R07DS0095EJ0800 PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011 RQA0011DNS RQA0004 PG890 RQA0011DNSTB-E

    BGA 420

    Abstract: 37265
    Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3  Cascadable 50 -gain block 4  Unconditionally stable  Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA  Noise figure NF = 2.3 dB at 1.8 GHz 1  Reverse isolation > 28 dB and


    Original     		PDF BGA420 25-Technologie VPS05605 EHA07385 OT343 BGA 420 37265

    63 1826 0306

    Abstract: Ka 2535 data sheet zo 103 ma 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89
    Text: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0752-0200 Previous ADE-208-1414 Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz


    Original     		PDF 2SC5702 REJ03G0752-0200 ADE-208-1414) PUSF0003ZA-A 63 1826 0306 Ka 2535 data sheet zo 103 ma 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89

    1128 marking

    Abstract: 63 1826 0306 zo 103 ma 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89
    Text: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0752-0200 Previous ADE-208-1414 Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz


    Original     		PDF 2SC5702 REJ03G0752-0200 ADE-208-1414) PUSF0003ZA-A 1128 marking 63 1826 0306 zo 103 ma 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89

    BGA420

    Abstract: E6327
    Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3  Cascadable 50 -gain block 4  Unconditionally stable  Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA  Noise figure NF = 2.3 dB at 1.8 GHz 1  Reverse isolation > 28 dB and


    Original     		PDF BGA420 25-Technologie VPS05605 EHA07385 OT343 BGA420 E6327

    Untitled

    Abstract: No abstract text available
    Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S 21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD


    Original     		PDF BGA420 25-Technologie EHA07385

    INFINEON marking BGA

    Abstract: BGA420 t501
    Text: BGA420 Si-MMIC-Amplifier in SIEGET  25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz V D = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.3 dB at 1.8 GHz VD


    Original     		PDF BGA420 25-Technologie EHA07385 OT343 INFINEON marking BGA BGA420 t501

    Untitled

    Abstract: No abstract text available
    Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable 2 4 • Gain |S 21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD


    Original     		PDF BGA420 25-Technologie EHA07385 OT343

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 0, 1/2004 Gallium Arsenide CATV Amplifier Module MHW8207A Features • Specified for 79 - and 112 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection


    Original     		PDF MHW8207A CSO112 CSO79 XMD112 XMD79 CTB112

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 0, 12/2003 Gallium Arsenide CATV Amplifier Module MHW8227A Features • Specified for 79 - and 112 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection


    Original     		PDF CSO112 CSO79 XMD112 XMD79 CTB112 CTB79

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 0, 1/2004 Gallium Arsenide CATV Amplifier Module MHW8267A Features • Specified for 79 - and 112 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection


    Original     		PDF MHW8267A MHW8267A

    20-PIN

    Abstract: ICS853013 MC100EL13 MC100LVEL13 MS-013
    Text: ICS853013 Integrated Circuit Systems, Inc. LOW SKEW, DUAL, 1-TO-3, DIFFERENTIAL-TO2.5V/3.3V/5V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853013 is a low skew, high performance dual 1-to-3 Differential-to-2.5V/3.3V/5V LVPECL/ HiPerClockS


    Original     		PDF ICS853013 ICS853013 853013AM 20-PIN MC100EL13 MC100LVEL13 MS-013

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF MMRF1021N MMRF1021NT1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Amplifier Module MHW9187 Features • • • • • Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability GaAs FET Transistor Technology


    Original     		PDF 132-Channel MHW9187 CSO132 CSO112 CSO79

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Amplifier Module MHW9267 Features • • • • • • Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability Built-in Input Diode Protection


    Original     		PDF 132-Channel MHW9267 CSO132 CSO112 CSO79

    ICS853013

    Abstract: MC100EL13 MC100LVEL13 MS-013 20-PIN
    Text: ICS853013 Integrated Circuit Systems, Inc. LOW SKEW, DUAL, 1-TO-3, DIFFERENTIAL-TO2.5V/3.3V/5V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853013 is a low skew, high performance dual 1-to-3 Differential-to-2.5V/3.3V/5V HiPerClockS LVPECL/ECL Fanout Buffer and a member of


    Original     		PDF ICS853013 ICS853013 853013AM MC100EL13 MC100LVEL13 MS-013 20-PIN

    TC236

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.


    OCR Scan     		PDF 2SC4885 SC-70 CO193 TC236

    TRANSISTOR J 5804 NPN

    Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.


    OCR Scan     		PDF 2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF