Untitled
Abstract: No abstract text available
Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S 21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD
|
Original
|
PDF
|
BGA420
25-Technologie
EHA07385
|
INFINEON marking BGA
Abstract: BGA420 t501
Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz V D = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.3 dB at 1.8 GHz VD
|
Original
|
PDF
|
BGA420
25-Technologie
EHA07385
OT343
INFINEON marking BGA
BGA420
t501
|
Untitled
Abstract: No abstract text available
Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable 2 4 • Gain |S 21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD
|
Original
|
PDF
|
BGA420
25-Technologie
EHA07385
OT343
|
BGA 420
Abstract: 37265
Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA Noise figure NF = 2.3 dB at 1.8 GHz 1 Reverse isolation > 28 dB and
|
Original
|
PDF
|
BGA420
25-Technologie
VPS05605
EHA07385
OT343
BGA 420
37265
|
BGA420
Abstract: EHA07385
Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA Noise figure NF = 2.3 dB at 1.8 GHz 1 Reverse isolation > 28 dB and
|
Original
|
PDF
|
BGA420
25-Technologie
VPS05605
EHA07385
OT343
Jan-29-2002
BGA420
EHA07385
|
Q62702-G0057
Abstract: BGA 64 PACKAGE thermal resistance
Text: BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data 3 • Cascadable 50 Ω-gain block 4 • Unconditionally stable • Gain |S21 |2 = 13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.4 mA • Noise figure NF = 2.2 dB at 1.8 GHz
|
Original
|
PDF
|
25-Technologie
VPS05605
EHA07385
Q62702-G0057
OT-343
Jul-13-1998
Q62702-G0057
BGA 64 PACKAGE thermal resistance
|
INFINEON marking BGA
Abstract: 420 transistor
Text: BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21 |2 = 13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.4 mA Noise figure NF = 2.2 dB at 1.8 GHz 1 Reverse isolation > 28 dB and
|
Original
|
PDF
|
25-Technologie
VPS05605
EHA07385
OT-343
Oct-12-1999
INFINEON marking BGA
420 transistor
|
BGA420
Abstract: E6327
Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA Noise figure NF = 2.3 dB at 1.8 GHz 1 Reverse isolation > 28 dB and
|
Original
|
PDF
|
BGA420
25-Technologie
VPS05605
EHA07385
OT343
BGA420
E6327
|
BGA420
Abstract: No abstract text available
Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21 |2 = 13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.4 mA Noise figure NF = 2.2 dB at 1.8 GHz 1 Reverse isolation > 28 dB and
|
Original
|
PDF
|
BGA420
25-Technologie
VPS05605
EHA07385
OT343
Aug-02-2001
BGA420
|