Transistor A111
Abstract: No abstract text available
Text: ^zmi-L.onau.cto'i , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN RF Transistor BFR520 DESCRIPTION • High Power Gain ^^ • High Current Gain Bandwidth Product SOT- 2 3 package
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BFR520
900MHz
150T150
Transistor A111
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Untitled
Abstract: No abstract text available
Text: i£ii£Li ^zmi-L-onaiLctoi iJ-^io ducts., One. Lx t/ TELEPHONE: (973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUZ 41 A 1 N channel 1 Enhancement mode Avalanche-rated Pin1 Pin 2 Pin 3 D Type VDS ID ffDS(on) Package BUZ 41 A 500V 4.5 A 1.5Q
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O-220
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imo 2.1 un 1950 safety data sheet
Abstract: T2333 vogt transformer imo 2.1 un 1950 T2333-XV12-P3-7600 RT5880 RT5880 SMA amplifier mixer circuit diagram imo 2.2 un 1950 stocko mks
Text: ICs for Communications Mixer/Amplifier PMB 2333 Version 1.2 Preliminary Data Sheet 09.97 T2333-XV12-P3-7600 Edition 09.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1995. All Rights Reserved.
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T2333-XV12-P3-7600
SMD/0603
SMD/0805
B4672
LL1608-FH
imo 2.1 un 1950 safety data sheet
T2333
vogt transformer
imo 2.1 un 1950
T2333-XV12-P3-7600
RT5880
RT5880 SMA
amplifier mixer circuit diagram
imo 2.2 un 1950
stocko mks
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Untitled
Abstract: No abstract text available
Text: Lattica ;Semiconductor I Corporation Features ispLSI 2128V 3.3V High Density Programmable Logic Functional Block Diagram11 HIGH DENSITY PROGRAMMABLE LOGIC — — — — — 6000 PLD Gates 128 and 64 I/O Pin Versions, Eight Dedicated Inputs 128 Registers
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128V-80LT176
176-Pin
128V-80LQ160
160-Pin
128V-80LT100
100-Pin
128V-80LJ84
84-Pin
128V-60LT176
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Untitled
Abstract: No abstract text available
Text: Lattice ; ; ; ; Semiconductor •• ■■ Corporation is p L S I * 2 1 2 8 V L VANTI S 2.5V In-System Programmable SuperFAST High Density PLD Functional Block Diagram11 Features SuperFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC — — — — — 6000 PLD Gates
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2128VE
2128VL-135LT100
100-Pin
2128VL-135LB100
100-Ball
2128VL-100LT176
176-Pin
2128VL-100LQ160
160-Pin
2128VL-100LB208
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount
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BUK583-60A
OT223
BUK583-60A
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aah8
Abstract: 1R94558 94559 ir94558 IR-94558 X15V IR94558N 1r9455 IR94559 RCA2K
Text: IR94558/IR94558N/IR94559/IR94559N Low Noise Dual Operational Am plifier T -77-<%• t o IR94558/IR94558N/IR94559/IR94559N Low Noise Dual Operational Amplifier • Description The IR94558/1R94558N and IR94559/IR94559N are .tow noise dual operational amplifiers. High input
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IR94558/IR94558N/IR94559/IR94559N
T-79-06-Z0
1R94558/1R9455
IR945S9/IR
45S9N
IR94558/IR945S9)
IR945S8WIR94559N)
x-15V.
94559/1R94559N
aah8
1R94558
94559
ir94558
IR-94558
X15V
IR94558N
1r9455
IR94559
RCA2K
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BUK637-400A
Abstract: BUK637-400B
Text: Philips Components BUK637-400A BUK637-400B PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control
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BUK637-400A
BUK637-400B
BUK637
-400A
-400B
M89-1166/RC
BUK637-400A
BUK637-400B
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isplsi2064
Abstract: No abstract text available
Text: Lattice* “ ; S e m ico nd u cto r • ■ ■ C orporation Features ispLSI 2064V High-Density Programmable Logic Functional Block Diagram • HIGH-DENSITY PROGRAMMABLE LOGIC — — — — — • • • • • 2000 PLD Gates 64 and 32 I/O Pin Versions, Four Dedicated Inputs
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100MHz
064V-80LJ84
84-Pin
064V-80LT100
100-Pin
064V-80LJ44
44-Pin
ispLSI2064V-80LT44
064V-60LJ84
isplsi2064
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a2222
Abstract: 2SK1510-01 2sk mosfet 2SK1510-01L A2223
Text: 21SK1510-01L.S FUJI PO W ER M O S-F ET F - II S E R IE S N-CHANNEL SILICON POWER MOS-FET • Features Outline Drawings • High speed switching • l.ow on-resistance • No secondary breakdown • Low driving power • High voltage • 7 G5S = ±30V Guarantee
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2SK1510-01
a2222
2sk mosfet
2SK1510-01L
A2223
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Untitled
Abstract: No abstract text available
Text: H RF2137 F MICRO-DEVICES LINEAR POWER AMPLIFIER Typ ical A p plications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery Powered Equipment Product D escription The R F2137 is a high power, high e fficiency linear a m p li
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RF2137
F2137
RF2137410
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Untitled
Abstract: No abstract text available
Text: RFH RF2403 MICRO DEVICES TRANSCEIVER FRONT-END Typ ical A p plications • 9 1 5 MHz ISM Band Products • W ireless Security Systems • Transceiver Front-Ends • W ireless LANs • 900M Hz Cordless Telephones • POS Terminals Product D escription .157
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RF2403
RF2403
915MHz
RF2403PCBA
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1S2074
Abstract: 74LSOO HD74LS669 74ls* Ripple Carry Binary Counter Hitachi Scans-001
Text: •Syn ch rono u s Up/Dow n 4-bit Binary Counters This synchronous presettable 4-bit binary counter features an must be low to count. The direction of the count is deter internal carry look-ahead for cascading in high-speed co un t ing applications. Syn c h ron ou s operation is provided by having
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QQ14CI14
DG-14
06max
20-IU8
OG-16
DG-24
81mlx
1S2074
74LSOO
HD74LS669
74ls* Ripple Carry Binary Counter
Hitachi Scans-001
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RC30 resistor
Abstract: No abstract text available
Text: R F RF2312 H MICRO DEVICES LINEAR GENERAL PURPOSE AM PLIFIER T y p ic a l A p p lic a tio n s • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations P r o d u c t D e s c r ip tio n
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RF2312
RF2312
1000MHz,
RC30 resistor
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LM837
Abstract: LM837M LM837N M14A N14A car Amplifier schematic diagrams 12v SI 9509
Text: February 1995 Semiconductor LM837 Low Noise Quad Operational Amplifier General Description Features The LM837 is a quad operational amplifier designed for low noise, high speed and wide bandwidth performance. It has a new type of output stage which can drive a 6 0 0 fl load, mak
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LM837
600fl
13tti
20-3A
bS0112M
010225b
LM837M
LM837N
M14A
N14A
car Amplifier schematic diagrams 12v
SI 9509
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Untitled
Abstract: No abstract text available
Text: R FH RF9904 MICRO DEVICES INTEG RATED TRANSCEIVER Typ ical A p plications • Digital Communication Systems • 915 MHz ISM Band Systems • Spread Spectrum Communication Systems • POS Terminals • 915 MHz Cordless Phones • Commercial Handheld Systems
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RF9904
RF9904
1100MHz
1008C
-100X
T-080X
T-040X
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RF9904
Abstract: No abstract text available
Text: RFH RF9904 MICRO DEVICES INTEG RATED TRANSCEIVER Typ ical A p plications • Digital Communication Systems • 915 MHz ISM Band Systems • Spread Spectrum Communication Systems • POS Terminals • 915 MHz Cordless Phones • Commercial Handheld Systems
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RF9904
RF9904
1100MHz
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inductor HR 5002
Abstract: AS92 ITE 8517
Text: RING VARISTORS ¿6 • * * > » ;* h P > 5 i 0 A 4 i^ - t r 7 < .]w * ^ rtr vifr > ». ¿¿-S' *x l v ± £ l'£ & J Ê ^ 'J I | } Î £ ï f c $ Ë | S I < 7 . / < X * ''B 0 J R n ItË ’ ■5P ï B ® a p / / ' ll J ® ® ® S Ä . o m m STR *
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Untitled
Abstract: No abstract text available
Text: RFH RF9901 MICRO DEVICES FSK TRANSMITTER Typ ical A p plications • Handheld POS Terminals • Digital Communication Systems • General Purpose 868 and 9 1 5 MHz • Commercial and Consumer Products ISM Band Applications Product D escription .157 .150 The RF9901 is a monolithic integrated circuit intended for
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RF9901
RF9901
16-lead
RF9902
RF9901PCBA
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Untitled
Abstract: No abstract text available
Text: SIEMENS ICs for Communications LNA/MIXER P M B 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 053SbO S 0 C H flb 4 3 7bfc> E d itio n 06 .96 A u s g a b e 06 .9 6 P u b lis h e d b y S ie m e n s A G , B e re ic h H a lb le ite r, M a rk e tin g K o m m u n ik a tio n , B ala n s tra B e 73,
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T2332-XV12-P2-7600
053SbO
fl235b05
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RF2401
Abstract: No abstract text available
Text: R F E ii RF2401 M ICRO-DEVICES LOW NOISE AMPLIFIER/MIXER T y p ic a l A p p lic a tio n s • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment • Spread Spectrum Communication Systems • General Purpose Frequency Conversion
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RF2401
RF2401
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ttr01
Abstract: MG50D2DM1 H125 250V MG50G2DM1 MG30D1ZM1 MG30D2DM1 MG30D2YM1 MG30G2DM1 MG30G2YM1 MG50D2YM1
Text: V-ÿy-^xf •t ÿ i — it- ->'J3 MOS MOS FET F E T £ m s / 2 * !® o Hg/2flWB « M B » y 1- • ¡S M 7 ' zm-i 1 S ¿ ^ r - x é f t ( i « S á t i T l - '5 o 7 1; — * - f 7L- ■f ' - n — w DM 1 Dl , . ^ _ K2 o- w -K (C I) Oo -o \ \
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H-101
ttr01
MG50D2DM1
H125 250V
MG50G2DM1
MG30D1ZM1
MG30D2DM1
MG30D2YM1
MG30G2DM1
MG30G2YM1
MG50D2YM1
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JRC 4003 G
Abstract: jrc 4003 MIL-STD-883A Burr-Brown 3510
Text: B U R R -B R O W N 3510/883B SERIES EMMI M O D EL NUM BER: 3510VM/883B R E V IS IO N C MAY, 1986 Very Low Drift Military O P E R A T IO N A L A M P L IF IE R FEATURES DESCRIPTION • VERY LOW DRIFT, ±2^V/°C max High overall accuracy is offered by B urr-B row n\
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3510/883B
3510VM/883B
120dB
JRC 4003 G
jrc 4003
MIL-STD-883A
Burr-Brown 3510
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isplsi2
Abstract: No abstract text available
Text: Lattice' ispLSI 2096V ; ; ; Semiconductor •■■Corporation 3.3V High Density Programmable Logic Features Functional Block Diagram • HIGH DENSITY PROGRAMMABLE LOGIC — 4000 PLD Gates — 96 I/O Pins, Six Dedicated Inputs — 96 Registers — High Speed Global Interconnect
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128-Pin
21272096V
ispLSI2096V-80LT128
096V-80LQ128
096V-60LT128
096V-60LQ128
isplsi2
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