J027
Abstract: TGA49
Text: TGA4906-SM 4 Watt Ka-Band Power HPA Applications Ka-Band Sat-Com VSAT QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 28 – 31 GHz Power: 36 dBm Psat Gain: 23 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.7 V Typical Package Dimensions: 5.0 x 5.0 x 1.2 mm
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TGA4906-SM
TGA4906-SM
J027
TGA49
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ieee802.11b
Abstract: No abstract text available
Text: CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth
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CGB240B
22dBm,
-33dB
IEEE802
ieee802.11b
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC CGB240B Preliminary Data Sheet • 2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications • ACPR / IP3 tested to be compliant with IEEE802.11b standard • Fully compliant with Bluetooth requirements dual-mode use • Single voltage supply
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CGB240B
IEEE802
CGB240B
BluetooCGB240B
P-TSSOP-10-2
TSSOP10
Version01
J-STD-033
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Untitled
Abstract: No abstract text available
Text: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its
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CGB240
IEEE802
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Untitled
Abstract: No abstract text available
Text: OPA2541 Dual High Power OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● OUTPUT CURRENTS TO 5A ● POWER SUPPLIES TO ±40V ● FET INPUT The OPA2541 is a dual power operational amplifier capable of operation from power supplies up to ±40V and output currents of 5A continuous. With two monolithic power amplifiers in a single package it provides
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OPA2541
OPA2541
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12065G105AT2A
Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with
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MRF7S18125BH
MRF7S18125BHR3
MRF7S18125BHSR3
MRF7S18125BHR3
12065G105AT2A
j292
MRF7S18125
F 365 R
A114
A115
AN1955
C101
JESD22
RF35
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Untitled
Abstract: No abstract text available
Text: CM1415 3 Channel Headset EMI Filter with ESD Protection Features Product Description • The CM1415 is a low-pass filter array integrating three pi-style filters C-R-C that reduce EMI/RFI emissions while at the same time providing ESD protection. This device is custom-designed to interface with the headset port on a cellular telephone, and contains two different filter values. Each high quality filter provides
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CM1415
CM1415
178mm
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CM1426 LCD and Camera EMI Filter Array with ESD Protection Features Product Description • The CM1426 is a family of pi-style EMI filter arrays with ESD protection, which integrates four, six and eight filters C-R-C in a Chip Scale Package with 0.50mm
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CM1426
CM1426
5pF-100â
230MHz
92Mbps.
CM1426-08
178mm
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Untitled
Abstract: No abstract text available
Text: CM1401-03 4-Channel ESD/EMI Filter Array plus 4-Channel ESD Array for USB Features Product Description • The CM1401-03 is a multichannel array with four lowpass filter + ESD channels and four ESD-only channels. They reduce EMI/RFI emissions on a data port
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CM1401-03
CM1401-03
CSPEMI307A
178mm
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Untitled
Abstract: No abstract text available
Text: CM1424 MultiMedia Card EMI Filter Array with ESD Protection Features Product Description • The CM1424 is an EMI filter array integrating 3 pi-filters C-R-C and 2 channels of ESD protection. The CM1424 has component values of 12pF - 100Ω - 12pF. The parts include avalanche-type ESD diodes on every
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CM1424
CM1424
IEC61000-4-2
MILSTD-883
CM1424-01
178mm
CM1424-03
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Untitled
Abstract: No abstract text available
Text: RF2492 Preliminary 8 DUAL-BAND LOW NOISE AMPLIFIER/MIXER Typical Applications • TDMA-GSM Cellular/PCS Handsets • CDMA Cellular/PCS Handsets • TDMA Cellular/PCS Handsets • GSM DCS/PCS Handsets • GAIT Handsets Product Description 1.00 0.85 Optimum Technology Matching Applied
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RF2492
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Untitled
Abstract: No abstract text available
Text: CM1443-06CP 6-Channel EMI Filter Array with ESD Protection Features Applications • • • • • • • • Six channels of EMI filtering for data ports Pi-style EMI filters in a capacitor-resistor-capacitor C-R-C network +15kV ESD protection on each channel
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CM1443-06CP
15-bump;
053mm
178mm
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N31E
Abstract: WDFN 14 pin mobile phone camera pinout
Text: CM1431 LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1431 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six and eight filters C−R−C in small form factor WDFN 0.40 mm pitch packages. The CM1431 has
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CM1431
IEC61000-4-2
CM1431/D
N31E
WDFN
14 pin mobile phone camera pinout
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Untitled
Abstract: No abstract text available
Text: DS80EP100 DS80EP100 5 to 12.5 Gbps, Power-Saver Equalizer for Backplanes and Cables Literature Number: SNLS279B DS80EP100 5 to 12.5 Gbps, Power-Saver Equalizer for Backplanes and Cables General Description Features National’s Power-saver equalizer compensates for transmission medium losses and minimizes medium-induced deterministic jitter. Performance is guaranteed over the full range
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DS80EP100
DS80EP100
SNLS279B
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Untitled
Abstract: No abstract text available
Text: RF2917 11 433/868/915MHZ FM/FSK RECEIVER Typical Applications • Wireless Meter Reading • Remote Data Transfers • Keyless Entry Systems • Wireless Security Systems • 433/868/915MHz ISM Band Systems Product Description -A7.00 + 0.20 sq. 0.15 0.05 0.50
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RF2917
433/868/915MHZ
433/868/915MHz
LQFP-32
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MRF6S21140HR3
Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF6S21140H
MRF6S21140HR3
MRF6S21140HSR3
MRF6S21140HSR3
AN1955
MRF6S21140H
D2080
Nippon capacitors
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DAC80-CBI-I
Abstract: OPERATIONAL AMPLIFIERS PMI
Text: OPA2541 Dual High Power OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● OUTPUT CURRENTS TO 5A ● POWER SUPPLIES TO ±40V ● FET INPUT The OPA2541 is a dual power operational amplifier capable of operation from power supplies up to ±40V and output currents of 5A continuous. With two monolithic power amplifiers in a single package it provides
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OPA2541
OPA2541
APPLI1000
OPA2541SM
OPA2541SMQ
SBOM058,
OPA541
SBOM085,
DAC80-CBI-I
OPERATIONAL AMPLIFIERS PMI
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NEM0995F01-30
Abstract: LARGE SIGNAL IMPEDANCES
Text: High Power N-Channel Silicon MOSFET For Cellular Base Stations FEATURES NEM0995F01-30 3rd Order INTERMODULATION DISTORTION AND DRAIN CURRENT vs. OUTPUT POWER • HIGH LINEAR GAIN: 12 dB • HIGH DYNAMIC RANGE • LOW INTERMODULATION DISTORTION • INTERNALLY MATCHED FOR THE 820-960 MHz
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NEM0995F01-30
NEM0995F01-30
16AWG
18AWG
24-Hour
LARGE SIGNAL IMPEDANCES
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U2741BM
Abstract: class D power amplifier 6.78 MHz j330 U2741BN KW 13.56MHz 433.92 Antenna design u2741 U3741 6.78 MHz antenna transmitter 433.92 MHz 5v ask
Text: U2741B UHF ASK/FSK Transmitter Description The U2741B is a PLL transmitter IC which has been specially developed for the demands of RF low-cost data transmission systems at data rates up to 20 kBaud. The transmitting frequency range is 300 MHz to 450 MHz. It can be used in both FSK and ASK systems.
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U2741B
U2741B
SSO16
D-74025
22-Dec-00
U2741BM
class D power amplifier 6.78 MHz
j330
U2741BN
KW 13.56MHz
433.92 Antenna design
u2741
U3741
6.78 MHz antenna
transmitter 433.92 MHz 5v ask
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C 5478 transistor
Abstract: transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 NEL2004F02-24 173278 LARGE SIGNAL IMPEDANCES
Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) BASE 3±0.2 2±0.2 2±0.2 2 X φ3.2±0.3
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NEL2004F02-24
NEL2004F02-24
24-Hour
C 5478 transistor
transistor 5478
7807 transistor
resistor 39 ohm
NEL2004
1N4454
1N5254
173278
LARGE SIGNAL IMPEDANCES
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R4383
Abstract: T400 clock TSWC03622 TSYN01622 TSYN03622 TSWC01622 TSWC02622
Text: Advisory October 28, 2003 TSWC01622/TSWC02622/TSWC03622/TSYN01622/TSYN03622 Device Version 1.1 Advisory The following data sheets are to be referenced: • TSWC01622 SONET/SDH/PDH/ATM Clock Synthesizer and Protection Switch data sheet DS03-117HSPL-1 . ■
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2/TSWC02622/TSWC03622/TSYN01622/TSYN03622
TSWC01622
DS03-117HSPL-1)
TSWC02622
DS03-118HSPL-1)
TSWC03622
DS03-120HSPL)
TSYN01622
DS03-119HSPL)
TSYN03622
R4383
T400 clock
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mrfe6vp5600hs
Abstract: MRFE6VP5600H
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace
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MRFE6VP5600H
MRFE6VP5600HR6
MRFE6VP5600HSR6
mrfe6vp5600hs
MRFE6VP5600H
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Untitled
Abstract: No abstract text available
Text: •I ÖEBSbQS OQülb^l 1ÖT Hi SIEM ENS PROFET BTS620L1 Smart Two Channel Highside Power Switch Features Product Summary • Load dump and reverse battery protection1 • Short-circuit protection \ZLoad dump • Current limitation ^bb operation) • Thermal shutdown
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BTS620L1
23ShD5
Q67060-S6301-A2
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73M376
Abstract: 73M376-CH type off opamp
Text: ¿won¿usions SSI 73M376 Integrated Line Interface A TDK Group/Company Preliminary Data January 1993 DESCRIPTION FEATURES The SSI 73M376 K-Series Integrated Line Interface Unit LIU enables the modem to make direct connec tions to the Public SwitchedTelephone Network. This
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73M376
73M376
73M376-CH
type off opamp
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