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    WDFN Search Results

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    WDFN Price and Stock

    onsemi STR-NCP164A-WDFN6-GEVB

    STRATA ENABLED NCP164A WDFN6 ADJ
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    DigiKey STR-NCP164A-WDFN6-GEVB Box 1
    • 1 $204.1
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    Avnet Americas STR-NCP164A-WDFN6-GEVB Bulk 4
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    Newark STR-NCP164A-WDFN6-GEVB Bulk 1
    • 1 $233.5
    • 10 $226.97
    • 100 $213.9
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    Avnet Silica STR-NCP164A-WDFN6-GEVB 53 Weeks 1
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    OMRON Corporation CCSHLDL2300X45SWDFN

    HIGH PWR FLOOD WHITE 300MM OD - Bulk (Alt: CCSHLDL2300X45SWDF)
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    Avnet Americas CCSHLDL2300X45SWDFN Bulk 1
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    Nexperia NPS3102AGBJ

    Power Switch ICs - Power Distribution SOT8037 POWER SWITCH IC
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    TTI NPS3102AGBJ Reel 3,000
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    Nexperia NPS3102BGBJ

    Power Switch ICs - Power Distribution SOT8037 POWER SWITCH IC
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    TTI NPS3102BGBJ Reel 3,000
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    OMRON Industrial Automation CCSHLDL2300X45SWDFN

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    Master Electronics CCSHLDL2300X45SWDFN
    • 1 $2401.86
    • 10 $2249.86
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    WDFN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N31E

    Abstract: WDFN 14 pin mobile phone camera pinout
    Text: CM1431 LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1431 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six and eight filters C−R−C in small form factor WDFN 0.40 mm pitch packages. The CM1431 has


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    PDF CM1431 IEC61000-4-2 CM1431/D N31E WDFN 14 pin mobile phone camera pinout

    NTLJD3119CTAG

    Abstract: NTLJD3119C NTLJD3119CTBG
    Text: NTLJD3119C Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, mCoolt Complementary, 2x2 mm, WDFN Package Features • Complementary N−Channel and P−Channel MOSFET • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • Conduction Footprint Same as SC−88 Package


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    PDF NTLJD3119C SC-88 NTLJD3119C/D NTLJD3119CTAG NTLJD3119C NTLJD3119CTBG

    Untitled

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN16, 3.3x1.35, 0.4P CASE 511AW−01 ISSUE O 16 DATE 06 JUL 2010 1 SCALE 4:1 D PIN ONE REFERENCE 2X 2X 0.10 C DETAIL A E ALTERNATE TERMINAL CONSTRUCTIONS ÏÏ ÏÏÏ ÎÎ ÏÏÏ ÏÏ ÎÎÎ EXPOSED Cu TOP VIEW A3


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    PDF WDFN16, 511AW-01 511AW

    511AU

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN16, 4x1.6, 0.5P CASE 511AU−01 ISSUE O 16 DATE 06 JUL 2010 1 SCALE 4:1 PIN ONE REFERENCE 2X L A B D ÏÏ ÏÏ L1 DETAIL A E ALTERNATE TERMINAL CONSTRUCTIONS 0.10 C 2X 0.10 C A3 DETAIL B 0.08 C A1 SIDE VIEW


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    PDF WDFN16, 511AU-01 511AU 511AU

    506AP

    Abstract: NTLJS3113P NTLJS3113PT1G
    Text: NTLJS3113P Power MOSFET −20 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package Lowest RDS on Solution in 2x2 mm Package


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    PDF NTLJS3113P SC-88 NTLJS3113P/D 506AP NTLJS3113P NTLJS3113PT1G

    506AP

    Abstract: tl 72 oz NTLJS1102PTAG NTLJS1102PTBG
    Text: NTLJS1102P Power MOSFET −8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package Features • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • • Conduction Lowest RDS on in 2 x 2 mm Package 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate


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    PDF NTLJS1102P SC-88 NTLJS1102P/D 506AP tl 72 oz NTLJS1102PTAG NTLJS1102PTBG

    Untitled

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6, 2x2 CASE 506AZ−01 ISSUE A DATE 25 APR 2006 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM


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    PDF 506AZ-01 506AZ

    WDFN8

    Abstract: marking G3
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8, 3x3, 0.65P CASE 506BC−01 ISSUE A 8 1 DATE 28 MAY 2008 SCALE 2:1 A D L B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL


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    PDF 506BC-01 506BC WDFN8 marking G3

    Untitled

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8, 1.7x1.35, 0.4P CASE 511BF−01 ISSUE O 8 DATE 21 JUL 2010 1 SCALE 4:1 A B D PIN ONE REFERENCE 2X 0.10 C DETAIL A E ALTERNATE TERMINAL CONSTRUCTIONS ÏÏ ÏÏÏ ÎÎ ÏÏÏ ÏÏ ÎÎÎ EXPOSED Cu TOP VIEW A3


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    PDF 511BF-01 511BF

    esd diode a2

    Abstract: NUF4310MNTAG
    Text: NUF4310MN Low Capacitance 4-Line EMI Filter with ESD Protection in WDFN8 Package This device is a 4 line EMI filter array for wireless applications. Greater than −25 dB attenuation is obtained at frequencies from 800 MHz to 4.0 GHz. The NUF4310MN has a cut−off frequency of


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    PDF NUF4310MN NUF4310MN NUF4310MN/D esd diode a2 NUF4310MNTAG

    Untitled

    Abstract: No abstract text available
    Text: NTLJD3181PZ Power MOSFET −20 V, −4.0 A, mCoolt Dual P−Channel, ESD, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on Solution in 2x2 mm Package Footprint Same as SC−88 Package


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    PDF NTLJD3181PZ NTLJD3181PZ/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJD3183CZ Power MOSFET 20 V/−20 V, 4.7 A/−4.0 A, mCoolt Complementary, 2x2 mm, WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on in 2x2 mm Package Footprint Same as SC−88 Package


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    PDF NTLJD3183CZ NTLJD3183CZ/D

    Untitled

    Abstract: No abstract text available
    Text: NTTFS4985NF Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8 Features • • • • • Integrated Schottky Diode Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant


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    PDF NTTFS4985NF NTTFS4985NF/D

    NTLJF3118N

    Abstract: NTLJF3118NTAG NTLJF3118NTBG
    Text: NTLJF3118N Power MOSFET and Schottky Diode 20 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features •ăWDFN 2x2 mm Package Provides Exposed Drain Pad for V BR DSS Excellent Thermal Conduction


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    PDF NTLJF3118N SC-88 NTLJF3118N/D NTLJF3118N NTLJF3118NTAG NTLJF3118NTBG

    g3je

    Abstract: marking JE 6 pin D15G2 NTLJD3181PZTAG NTLJD3181PZTBG
    Text: NTLJD3181PZ Power MOSFET −20 V, −4.0 A, mCoolt Dual P−Channel, ESD, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on Solution in 2x2 mm Package Footprint Same as SC−88 Package


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    PDF NTLJD3181PZ SC-88 NTLJD3181PZ/D g3je marking JE 6 pin D15G2 NTLJD3181PZTAG NTLJD3181PZTBG

    NTLJD3115P

    Abstract: NTLJD3115PT1G NTLJD3115PTAG
    Text: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package


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    PDF NTLJD3115P SC-88 NTLJD3115P/D NTLJD3115P NTLJD3115PT1G NTLJD3115PTAG

    ci r12

    Abstract: PAM2308
    Text: PAM2308 Dual High-Efficiency PWM Step-Down DC-DC Coverter Pin Configuration TOP VIEW WDFN-10 L 3x3 EN1 1 10 LX 1 FB1 2 9 GND 8 VIN1 GND 4 7 FB2 LX 2 5 6 EN2 VIN2 3 2308v1 v2 XXXYW GND Exposed Pad L1 VOUT1 C OUT1 10 F C Fw1 100pF R11 PAM2308 1 R12 2 EN1


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    PDF PAM2308 2308v1 100pF ci r12 PAM2308

    Untitled

    Abstract: No abstract text available
    Text: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package


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    PDF NTLJD3115P NTLJD3115P/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJD4150P Power MOSFET −30 V, −3.4 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features http://onsemi.com • WDFN 2x2 mm Package Provides Exposed Drain Pad for • • • • Excellent Thermal Conduction Footprint Same as SC−88 Package Low Profile < 0.8 mm for Easy Fit in Thin Environments


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    PDF NTLJD4150P NTLJD4150P/D

    Untitled

    Abstract: No abstract text available
    Text: CM1431 LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1431 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six and eight filters C−R−C in small form factor WDFN 0.40 mm pitch packages. The CM1431 has


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    PDF CM1431 CM1431 CM1431/D

    14 pin mobile phone camera pinout

    Abstract: n618 CM1461 N618E 16 pin mobile phone camera pinout
    Text: CM1461 Praetorian C-L-C LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1461 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six and eight filters C−L−C) in small form factor WDFN 0.50 mm pitch packages. Each EMI filter


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    PDF CM1461 CM1461/D 14 pin mobile phone camera pinout n618 N618E 16 pin mobile phone camera pinout

    Untitled

    Abstract: No abstract text available
    Text: UM475XX 300mA, Micropower, Dual Channel VLDO Linear Regulator UM475XX TSOT23-6 WDFN8 3.0x3.0 General Description The UM475XX series are dual channel VLDO very low dropout linear regulators designed for low power portable applications. The range of output voltage is from 1.2V to 5.0V while operated


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    PDF UM475XX 300mA, TSOT23-6 UM475XX 200mV 100mA 300mA Lane647

    Untitled

    Abstract: No abstract text available
    Text: NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package


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    PDF NTLJS4114N SC-88 NTLJS4114N/D

    WDFN16

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN16, 6x4, 0.75P CASE 511AY−01 ISSUE O 16 DATE 21 JUL 2010 1 SCALE 2:1 A B D PIN ONE REFERENCE 2X 0.10 C DETAIL A E ALTERNATE TERMINAL CONSTRUCTIONS ÏÏÏ ÏÏ ÏÏÏ ÎÎÎ ÏÏ ÎÎ TOP VIEW EXPOSED Cu A3


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    PDF WDFN16, 511AY-01 511AY WDFN16