Untitled
Abstract: No abstract text available
Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT SERIES 2-Phase Half-Wave Pre Driver for Fan Motor TYPE ＢＤ６７１２ＡＦ FEATURES Built - in zenner diode for Vcc clamp 〇ABSOLUTE MAXIMUM RATINGS Symbol Limit Unit Pd 780＊ mW Operating temperature
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24mW/.
R1120A
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16 zenner diode
Abstract: zenner ZENNER DIODE W 20 CRY62 CRY68 CRY75 CRY82 CRY91 CRZ10 CRZ11
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Use in Communication, Automation and Measurement Equipment Constant Voltage Regulation Transient Suppressors Unit: mm l Average power dissipation: P = 0.7 W l Zener voltage: VZ = 6.2~47 V l Suitable for compact assembly due to small surface-mount package
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CRY62
CRZ47
16 zenner diode
zenner
ZENNER DIODE W 20
CRY68
CRY75
CRY82
CRY91
CRZ10
CRZ11
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zenner
Abstract: No abstract text available
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Use in Communication, Automation and Measurement Equipment Constant Voltage Regulation Transient Suppressors Unit: mm Average power dissipation: P = 0.7 W Zener voltage: VZ = 6.2~47 V Suitable for compact assembly due to small surface-mount package
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PDF
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CRY62
CRZ47
CRY91
zenner
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CRY62
Abstract: CRY68 CRY75 CRY82 CRY91 CRZ10 CRZ11 CRZ12 CRZ13 CRZ47
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications: Communication, Control and Unit: mm Measurement Equipment Constant Voltage Regulation Transient Suppressors z Average power dissipation: P = 0.7 W z Zener voltage: VZ = 6.2~47 V
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PDF
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CRY62
CRZ47
CRY68
CRY75
CRY82
CRY91
CRZ10
CRZ11
CRZ12
CRZ13
CRZ47
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16 zenner diode
Abstract: zenner ZENNER DIODE W 20 CRY62 CRY68 CRY75 CRY82 CRY91 CRZ30 zener diode CRZ11
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications: Communication, Control and Unit: mm Measurement Equipment Constant Voltage Regulation Transient Suppressors Average power dissipation: P = 0.7 W Zener voltage: VZ = 6.2~47 V Suitable for compact assembly due to small surface-mount package
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Original
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PDF
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CRY62
CRZ47
CRZ47
16 zenner diode
zenner
ZENNER DIODE W 20
CRY68
CRY75
CRY82
CRY91
CRZ30 zener diode
CRZ11
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CRY62
Abstract: CRY68 CRY75 CRY82 CRY91 CRZ10 CRZ11 CRZ12 CRZ13 CRZ47
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications: Communication, Control and Unit: mm 削除: Automation Measurement Equipment Constant Voltage Regulation Transient Suppressors z Average power dissipation: P = 0.7 W z Zener voltage: VZ = 6.2~47 V
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PDF
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CRY62
CRZ47
CRY68
CRY75
CRY82
CRY91
CRZ10
CRZ11
CRZ12
CRZ13
CRZ47
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CRY62
Abstract: CRY68 CRY75 CRY82 CRY91 CRZ10 CRZ11 CRZ12 CRZ13 CRZ47
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Use in Communication, Automation and Measurement Equipment Constant Voltage Regulation Transient Suppressors Unit: mm Average power dissipation: P = 0.7 W Zener voltage: VZ = 6.2~47 V Suitable for compact assembly due to small surface-mount
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PDF
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CRY62
CRZ47
CRY68
CRY75
CRY82
CRY91
CRZ10
CRZ11
CRZ12
CRZ13
CRZ47
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a39 zener diode
Abstract: No abstract text available
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications: Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors Unit: mm z Average power dissipation: P = 0.7 W z Zener voltage: VZ = 6.2~47 V
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Original
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PDF
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CRY62
CRZ47
a39 zener diode
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Untitled
Abstract: No abstract text available
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications: Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors Unit: mm Average power dissipation: P = 0.7 W Zener voltage: VZ = 6.2~47 V Suitable for compact assembly due to small surface-mount package
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Original
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PDF
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CRY62
CRZ47
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zenner
Abstract: CRY62 CRY68 CRY75 CRY82 CRY91 CRZ10 CRZ11 CRZ12 CRZ13
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications: Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors Unit: mm z Average power dissipation: P = 0.7 W z Zener voltage: VZ = 6.2~47 V
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Original
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PDF
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CRY62
CRZ47
zenner
CRY68
CRY75
CRY82
CRY91
CRZ10
CRZ11
CRZ12
CRZ13
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CRY62
Abstract: CRY68 CRY75 CRY82 CRY91 CRZ10 CRZ11 CRZ12 CRZ13 CRZ47
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications: Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors Unit: mm z Average power dissipation: P = 0.7 W z Zener voltage: VZ = 6.2~47 V
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CRY62
CRZ47
CRY68
CRY75
CRY82
CRY91
CRZ10
CRZ11
CRZ12
CRZ13
CRZ47
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S18209TC421
Abstract: C18209N21 S18211TC421 E152N20011 C12209N21 S02209TC421 S05207TC422 C19207N62 DIN 43650 form a S02207TC421
Text: Micro-Change M12 Moulded Connectors 34 1 3 4 Cable Length (m) Male Connector Brown Blue Black Brown White 5 Pole/3 Wire 3 4 Blue Black 5 Pole/4 Wire 1 2 3 Brown White Blue 4 5 Black Grey 1 2 3 4 White Brown Green Yellow 5 Pole/5 Wire WIRING CONFIGURATION
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803006E03M020
803006E03M050
803006E03M100
804006E03M020
804006E03M050
804006E03M100
805006E03M020
805006E03M050
805006E03M100
803006P03M020
S18209TC421
C18209N21
S18211TC421
E152N20011
C12209N21
S02209TC421
S05207TC422
C19207N62
DIN 43650 form a
S02207TC421
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zenner
Abstract: 015AZ12-X 015AZ2 015AZ24 015AZ16 702z diode 639 015AZ15
Text: 015AZ2.0~015AZ24 TOSHIBA Diode Silicon Epitaxial Planar Type 015AZ2.0~015AZ24 Constant-Voltage Regulation Applications Unit: mm Small package Nominal voltage tolerance of about ±2.5% 2.0 V~24 V Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit
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015AZ2
015AZ24
zenner
015AZ12-X
015AZ24
015AZ16
702z
diode 639
015AZ15
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sj 2258
Abstract: No abstract text available
Text: 2SK1822-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance • A ve lanche-proof • Including G-S Zenner diode
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OCR Scan
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2SK1822-01
sj 2258
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FA 23 zenner
Abstract: A2466 DO810 2SK2259-01MR K2259 bojk
Text: 2SK2259-01MR FUJI PO W ER M O S-F ET N-OHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES Outline Drawings I Features »High current »Low on-resistance »Mo secondary breakdown »Low driving power 1h igh forward Transconductance 'Avalanche-proof 'Including G-S Zenner diode
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2SK2259-01
FA 23 zenner
A2466
DO810
2SK2259-01MR
K2259
bojk
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LTTG
Abstract: EM 257
Text: 4 4 ^ 2 0 5 0 G13 D35 245 • H I T 4 2SK318— HI TA CHI/ OP TO ELE CTR ON ICS blE » SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.
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2SK318--
44Tb2G5
0D13D3L.
LTTG
EM 257
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2SK317
Abstract: 2sk317 hitachi J-D4A rfpak zenner 10v D013Q3M
Text: • 2SK317 44‘ìbBDS 0013033 47S « H I T H blE J> HIT AGHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes. •
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2SK317
D013Q3M
2SK317
2sk317 hitachi
J-D4A
rfpak
zenner 10v
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K2259
Abstract: 2SK2259-01M 2SK2259-01MR T151 FA 23 zenner A2466
Text: 2SK2259-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES Outline Drawings • Features • High current • Low on-resistance • Mo secondary breakdown • Low driving power • h igh forward Transconductance • Avalanche-proof • Including G-S Zenner diode
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OCR Scan
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PDF
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2SK2259-01MR
SC-67
ilif1115
891-gMSB
K2259
2SK2259-01M
2SK2259-01MR
T151
FA 23 zenner
A2466
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H150
Abstract: No abstract text available
Text: 2SK1822-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IHA SERIES • Features Outline Drawings • High current • Low on-resistance • No secondary breakdown • Lovv driving power • High forward Transconductance • Avc lanche-proof • Including G-S Zenner diode
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OCR Scan
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PDF
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2SK1822-01
SC-67
H150
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2SK318
Abstract: No abstract text available
Text: 44^205 2SK318- 0013D35 245 • HIT4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.
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OCR Scan
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PDF
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0013D35
l75MH
l75MHi;
2SK318
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2SK318
Abstract: "beryllium oxide" 20DRAM
Text: 44^205 2SK318- 0013D35 245 • HIT 4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.
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PDF
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0013D35
l75MH
69inv
l75MHi;
2SK318
"beryllium oxide"
20DRAM
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2SK317
Abstract: zenner 10v 2sk317 hitachi
Text: • 2SK317 HM'ìtSQS 0013033 47S ■ H I T 4 HI TA G H I / OPTOELECTRONICS LIE lT SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • • High Breakdown Voltage. You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.
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2SK317
D013Q3M
zenner 10v
2sk317 hitachi
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2SK317
Abstract: HF VHF power amplifier 2sk317 hitachi k317
Text: • 2SK317 4 4 ^ 2 0 5 0013033 472 ■ H I T 4 HITACHI/ OPTOELECTRONICS blE lT SILICON N-CHANNEL MOS FET HF/VHF POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. Gate is Protected by Zenner Diodes. No Secondary-Breakdown.
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2SK317
100MHz;
I75MH>
2SK317
HF VHF power amplifier
2sk317 hitachi
k317
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Untitled
Abstract: No abstract text available
Text: # 4 '^ " — Is/D io d e s RLZ5000 Series R L Z 500 0 S e rie s Voltage Regulation Diodes • ^ r^ X iiH / D im e n s io n s Unit : mm 1) r ^ j T " ' • S c 2) 3) • Features t : - Z 4 AS 4, 1) High reliability. 2) Ultra compact 3) Flat mounting feasible
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RLZ5000
LL-34
m5243B
5228B
5244B
5229B
5245B
5230B
5246B
5231B
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