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    2SK318

    Abstract: No abstract text available
    Text: 44^205 2SK318- 0013D35 245 • HIT4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.


    OCR Scan     		PDF 0013D35 l75MH l75MHi; 2SK318

    2SK318

    Abstract: "beryllium oxide" 20DRAM
    Text: 44^205 2SK318- 0013D35 245 • HIT 4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.


    OCR Scan     		PDF 0013D35 l75MH 69inv l75MHi; 2SK318 "beryllium oxide" 20DRAM