Untitled
Abstract: No abstract text available
Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT SERIES 2-Phase Half-Wave Pre Driver for Fan Motor TYPE ＢＤ６７１２ＡＦ FEATURES Built - in zenner diode for Vcc clamp 〇ABSOLUTE MAXIMUM RATINGS Symbol Limit Unit Pd 780＊ mW Operating temperature
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24mW/.
R1120A
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bd395
Abstract: No abstract text available
Text: Power Management IC Series for Automotive Body Control Regulator with Voltage Detector IC No.09039EAT05 BD3951F ●Description BD3951F is a 5V LDO system regulator particularly developed for automotive applications. The output current of the regulator can be drawn up to 150mA, and it has built-in power-on reset and input voltage sense. This device can withstand
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09039EAT05
BD3951F
BD3951F
150mA,
150mA.
bd395
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Transistor A1H
Abstract: BD6709FS A1H Transistor BD6718 bd6709 BD6722 BD6718FV BD6721FS BD6722FS SSOP-A16
Text: TECHNICAL NOTE DC Brushless Motor Drivers for Cooling Fans Speed Controllable Single-phase Full-wave DC Brushless Fan Motor Drivers BD6709FS, BD6718FV, BD6721FS, BD6722FS ●Description This is the summary of models that suit for 12V speed controllable fan for desktop PC and general consumer equipment.
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BD6709FS,
BD6718FV,
BD6721FS,
BD6722FS
BD6709FSBD6721FS)
BD6718FV)
BD6722FS)
BD6721FSBD6722FS)
Transistor A1H
BD6709FS
A1H Transistor
BD6718
bd6709
BD6722
BD6718FV
BD6721FS
BD6722FS
SSOP-A16
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Untitled
Abstract: No abstract text available
Text: ZMM55C Series Surface Mount Zener Diodes * “G” Lead Pb -Free SMALL SIGNAL ZENER DIODES 0.5 WATTS Features: *500mw Power Dissipation *Genelral Purpose , Medium Current *Ideal for Surface Mountted Application Mechanical Data: *Case : MINI-MELF Glass Case (SOD-80)
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ZMM55C
500mw
OD-80)
200mA
ZMM55C"
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is2076a
Abstract: HA16150P HA16150T TSSOP-16 G9BP High-Speed Current Mode Push-Pull PWM Control IC
Text: HA16150T/P High-Speed Current Mode Push-Pull PWM Control IC REJ03F0146-0200 Previous: ADE-204-071A Rev.2.00 Jun 15, 2005 Description The HA16150 is a high-speed current mode PWM control IC with push-pull dual outputs, suitable for high-reliability, high-efficiency, high-mounting-density isolated DC-DC converter and high-output AC-DC converter control.
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HA16150T/P
REJ03F0146-0200
ADE-204-071A)
HA16150
180-degree
ultra-5-900
Unit2607
is2076a
HA16150P
HA16150T
TSSOP-16
G9BP
High-Speed Current Mode Push-Pull PWM Control IC
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TD62001
Abstract: IC TD62002P AP series TD62003F TD62001AF TD62001AP 35VTA TD62004 TD62003P TD62001F
Text: TD62001~004P/AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62001P,TD62001AP,TD62001F,TD62001AF,TD62002P TD62003AF,TD62004P,TD62004AP,TD62004F,TD62004AF 7CH DARLINGTON SINK DRIVER
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TD62001
004P/AP/F/AF
TD62001P
TD62001AP
TD62001F
TD62001AF
TD62002P
TD62002AP
TD62002F
TD62002AF
IC TD62002P
AP series
TD62003F
35VTA
TD62004
TD62003P
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ZMM55C
Abstract: ZMM55-C10 ZMM55C-5V1 ZMM55C3V3 ZMM55C2V4 ZMM55C2V7 ZMM55C3V0 ZMM55C3V6 ZMM55C3V9 ZMM55C4V3
Text: ZMM55C Series Surface Mount Zener Diodes P b Lead Pb -Free SMALL SIGNAL ZENER DIODES 0.5 WATTS Features: *5 0 0 m w Power Dis s ipation *Genelral P urpos e , Medium Current *Ideal for S urface Mountted Application Mechanical Data: *Cas e : MIN I-ME L F Glas s Cas e (S OD-8 0 )
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ZMM55C
200m0
ZMM55C"
ZMM55-C10
ZMM55C-5V1
ZMM55C3V3
ZMM55C2V4
ZMM55C2V7
ZMM55C3V0
ZMM55C3V6
ZMM55C3V9
ZMM55C4V3
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NA11-300-18
Abstract: No abstract text available
Text: DP Series N Series 15 & 40 Watts Single Outputs 1234567890123456789012345678901212345678 1234567890123456789012345678901212345678 1234567890123456789012345678901212345678 1234567890123456789012345678901212345678 1234567890123456789012345678901212345678 1234567890123456789012345678901212345678
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36Vdc
12Vdc
3000mA
8000mA
3300mA
NA11-300-18
NC11-800-18
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LTTG
Abstract: EM 257
Text: 4 4 ^ 2 0 5 0 G13 D35 245 • H I T 4 2SK318— HI TA CHI/ OP TO ELE CTR ON ICS blE » SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.
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2SK318--
44Tb2G5
0D13D3L.
LTTG
EM 257
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2SK318
Abstract: No abstract text available
Text: 44^205 2SK318- 0013D35 245 • HIT4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.
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0013D35
l75MH
l75MHi;
2SK318
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2SK318
Abstract: "beryllium oxide" 20DRAM
Text: 44^205 2SK318- 0013D35 245 • HIT 4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.
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0013D35
l75MH
69inv
l75MHi;
2SK318
"beryllium oxide"
20DRAM
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2SK317
Abstract: HF VHF power amplifier 2sk317 hitachi k317
Text: • 2SK317 4 4 ^ 2 0 5 0013033 472 ■ H I T 4 HITACHI/ OPTOELECTRONICS blE lT SILICON N-CHANNEL MOS FET HF/VHF POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. Gate is Protected by Zenner Diodes. No Secondary-Breakdown.
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2SK317
100MHz;
I75MH>
2SK317
HF VHF power amplifier
2sk317 hitachi
k317
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FA 23 zenner
Abstract: A2466 DO810 2SK2259-01MR K2259 bojk
Text: 2SK2259-01MR FUJI PO W ER M O S-F ET N-OHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES Outline Drawings I Features »High current »Low on-resistance »Mo secondary breakdown »Low driving power 1h igh forward Transconductance 'Avalanche-proof 'Including G-S Zenner diode
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2SK2259-01
FA 23 zenner
A2466
DO810
2SK2259-01MR
K2259
bojk
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2SK317
Abstract: 2sk317 hitachi J-D4A rfpak zenner 10v D013Q3M
Text: • 2SK317 44‘ìbBDS 0013033 47S « H I T H blE J> HIT AGHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes. •
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2SK317
D013Q3M
2SK317
2sk317 hitachi
J-D4A
rfpak
zenner 10v
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2SK317
Abstract: zenner 10v 2sk317 hitachi
Text: • 2SK317 HM'ìtSQS 0013033 47S ■ H I T 4 HI TA G H I / OPTOELECTRONICS LIE lT SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • • High Breakdown Voltage. You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.
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2SK317
D013Q3M
zenner 10v
2sk317 hitachi
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H150
Abstract: No abstract text available
Text: 2SK1822-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IHA SERIES • Features Outline Drawings • High current • Low on-resistance • No secondary breakdown • Lovv driving power • High forward Transconductance • Avc lanche-proof • Including G-S Zenner diode
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2SK1822-01
SC-67
H150
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1823-01R
Abstract: 2SK1823-01R T151 FA-MT A2260
Text: 2SK1823-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES I Features Outline Drawings ►High current ►-ow on-resistance ►slo secondary breakdown ►.ow driving power ►High forward Transconductance ►\valanche-proof ►ncluding G-S Zenner diode
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2SK1823-01R
1823-01R
2SK1823-01R
T151
FA-MT
A2260
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sj 2258
Abstract: No abstract text available
Text: 2SK1822-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance • A ve lanche-proof • Including G-S Zenner diode
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2SK1822-01
sj 2258
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Untitled
Abstract: No abstract text available
Text: 2SK1822-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features I Outline Drawings • High current • Low on-resistance b 5*02 • No secondary breakdown 2 7±0 2 • Low driving power • High forward Transconductance
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2SK1822-01M
SC-67
1822-01M
DDD3112
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Untitled
Abstract: No abstract text available
Text: Technical Data Silicon Monolithic Bipolar Digital Integrated Circuit TD62081AP/AF TD62082AP/AF TD62083AP/AF TD62084AP/AF 8-channel Darlington Sink Driver The TD62081 AP/AF Series features high-voltage, high current Darlington drivers composed of eight NPN
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TD62081AP/AF
TD62082AP/AF
TD62083AP/AF
TD62084AP/AF
TD62081
TD62081AP
TD62082AP
TD62083AP
DIP18-P-300D
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1600 v mosfet
Abstract: No abstract text available
Text: 2SK2166-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ _ _ _ - FAP-IIIA SERIES Outline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power
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2SK2166-01
1600 v mosfet
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1N21B
Abstract: 1n23b 1N21B diode 1N23 1N25 diode CS34B 1N23CR 1N25 1N23A CS36A
Text: 46 Electronic Valves Z& I Aero Services Ltd London England 1972-73 'Tm ìiX G E R M A N IU M J U N C T IO N S T U D M O U N T E D H A L F W A V E R E C T IF IE R S GJ3M, 200 p.i.v. GJ5M, 300 p.i.v. GJ6M, 150 p.i.v. GJ7M, 80 p.i.v. Note 400/800 m A D C . 400/800 m A DC
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SZT19
1N23C
CV111
1N23CR*
CV112
1N23E
CV291
1N23WEE
CV2226
CV2258
1N21B
1n23b
1N21B diode
1N23
1N25 diode
CS34B
1N23CR
1N25
1N23A
CS36A
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Untitled
Abstract: No abstract text available
Text: 2SK2166-01R FUJI POWER M OS-FET N-OHANIMEL SILICON POWER MOS-FET - F A P - I I I A S E R I E S • reatures Outline Drawings • I- igh cu rre n t • L dw on-resistance • f\o secondary breakdown • L jw d riving p o w e r
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2SK2166-01R
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a2305
Abstract: A2307 2sk1969 N CH MOSFET
Text: 2SK1969-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ -FAP-IIIA SERIES • Features IOutline Drawings • Hig i current • Low on-resistance • No secondary breakdown • L o v driving power • H ig i forward Transconductance
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2SK1969-01
a2305
A2307
2sk1969
N CH MOSFET
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