1N5224B
Abstract: No abstract text available
Text: DATA SHEET 1N5221B~1N5267B SILICON ZENER DIODES 2.4 to 75 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives
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1N5221B
1N5267B
500mW
2002/95/EC
DO-35
MIL-STD-750,
DO-35
5263B
1N5264B
1N5265B
1N5224B
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BZX84C12
Abstract: No abstract text available
Text: BZX84C2V7.BZX84C75 Zener-Diodes Surface mount Zener Diodes Zener-Dioden für die Oberflächenmontage Version 2004-08-03 Power dissipation Verlustleistung 1.1 2.9 ±0.1 0.4 Nominal Zener voltage Nominale Zener-Spannung 1.3 ±0.1 2.5 max 3 Type Code 2 1 300 mW
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BZX84C2V7.
BZX84C75
OT-23
O-236
BZX84C2V4
BZX84C2V7
BZX84C3V0
BZX84C3V3
BZX84C3V6
BZX84C3V9
BZX84C12
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bzx55c10
Abstract: BZX55C12 BZX55-C5V1 BZX55C5V1 BZX55-C18 bzx55c18 bzx55c13 bzx55c15 BZX55C24 BZX55C2V7
Text: BZX55C2V4~BZX55C100 AXIAL LEAD ZENER DIODES VOLTAGE 2.4 to 100 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Acqire quality system certificate : TS16949 • Manufactured in accordance with AECQ101
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BZX55C2V4
BZX55C100
500mW
TS16949
AECQ101
2002/95/EC
DO-35
MIL-STD-750,
DO-35
CHAR50
bzx55c10
BZX55C12
BZX55-C5V1
BZX55C5V1
BZX55-C18
bzx55c18
bzx55c13
bzx55c15
BZX55C24
BZX55C2V7
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zener-diode
Abstract: bzx84b5v6 philips zenerdiode BZX84B5V6
Text: ERRATA SHEET Type: STM 100 Step Code: Dx Date: 12/08/2005 Zugehörige Produktdokumentation o User Manual STM 100, V1.3 und V1.4 Fehlerbeschreibung Es wird beobachtet, dass die Empfänger RCM ein Telegramm des STM 100 Moduls nicht erkennen, da das Bit-Timing aus der Spezifikation driftet siehe
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100kOhm
STM100
zener-diode
bzx84b5v6 philips
zenerdiode
BZX84B5V6
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DCA50e
Abstract: DCA50 germanium transistors NPN 6F22 MN1604 SK17 germanium transistoren
Text: DCA50e Komponenten-Analysator erweitert Hergestellt in Großbritannien. Peak Electronic Design Ltd. Atlas House, Kiln Lane, Harpur Ind. Est, Buxton, SK17 9JL, U.K. Einleitung Der DCA50e KomponentenAnalysator ist ein zukunftsweisendes Instrument, das eine Vielzahl von
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DCA50e
DCA50e
DCA50
germanium transistors NPN
6F22
MN1604
SK17
germanium transistoren
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 1N5221B~1N5267B SILICON ZENER DIODES 2.4 to 75 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Pb free product : Sn can meet RoHS environment substance
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1N5221B
1N5267B
500mW
DO-35
MIL-STD-750,
DO-35
5263B
1N5264B
1N5265B
1N5266B
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1N5224B
Abstract: 1N5221B 1N5222B 1N5223B 1N5225B 1N5226B 1N5267B
Text: DATA SHEET 1N5221B~1N5267B SILICON ZENER DIODES 2.4 to 75 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives
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1N5221B
1N5267B
500mW
2002/95/EC
DO-35
MIL-STD-750,
DO-35
1N5225B
1N5225B
1N5224B
1N5222B
1N5223B
1N5226B
1N5267B
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zener diode si 18
Abstract: 6G zener diode MESS DO-213AB ZMY100G ZMY10G ZMY11G ZMY12G ZMY13G ZMY15G
Text: ZMY1G … ZMY100G 1.0 W Planare Si-Zener-Dioden für die Oberflächenmontage Surface mount Silicon-Zener Diodes (planar technology) Version 2005-01-18 1.0 W 0.5 Glass case MELF Glasgehäuse MELF 0.5 Nominal Z-voltage Nominale Z-Spannung Type Typ 5.0 2.5
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ZMY100G
DO-213AB
intern94
zener diode si 18
6G zener diode
MESS
DO-213AB
ZMY100G
ZMY10G
ZMY11G
ZMY12G
ZMY13G
ZMY15G
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"Audio Filters"
Abstract: CA04F2FT5AUD010 CA04F2FT5AUD010G
Text: Direct Link 1185 Applications & Cases Integrierter ESD/ EMI-Schutz Juli 2009 High Fidelity Immer mehr Elektronik in tragbaren und drahtlosen Geräten lässt diese für elektrostatische Entladungen ESD und elektromagnetische Interferenzen (EMI) zunehmend anfälliger werden. Vor allem die EMI müssen gemindert
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CA04F2FT5AUD010G
"Audio Filters"
CA04F2FT5AUD010
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 1N5221B~1N5267B SILICON ZENER DIODES 2.4 to 75 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in comply with EU RoHS 2002/95/EC directives
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1N5221B
1N5267B
500mW
2002/95/EC
DO-35
MIL-STD-750,
DO-35
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Untitled
Abstract: No abstract text available
Text: BZX55C2V4~BZX55C75 AXIAL LEAD ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 500 mWatts FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in comply with EU RoHS 2011/65/EU directives
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BZX55C2V4
BZX55C75
500mW
2011/65/EU
DO-35
MIL-STD-750,
DO-35
2013-REV
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 1N5221B~1N5267B SILICON ZENER DIODES 2.4 to 75 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in comply with EU RoHS 2002/95/EC directives
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1N5221B
1N5267B
500mW
2002/95/EC
DO-35
MIL-STD-750,
DO-35
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BZX55-C13
Abstract: BZX55-C8V2 BZX55C13 BZX55C6V2 BZX55C5V1
Text: BZX55C2V4~BZX55C100 AXIAL LEAD ZENER DIODES VOLTAGE 2.4 to 100 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Acqire quality system certificate : TS16949 • Manufactured in accordance with AECQ101
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BZX55C2V4
BZX55C100
500mW
TS16949
AECQ101
2002/95/EC
DO-35
MIL-STD-750,
DO-35
2012-REV
BZX55-C13
BZX55-C8V2
BZX55C13
BZX55C6V2
BZX55C5V1
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HZ2A1
Abstract: HZ15-1 HZ6C HZ-12B1 HZ4B3 HZ11A3 HZ27-3 hz9a2 HZ20-3 HZ4C
Text: HZ2A1 . HZ36-3 500 mW HZ2A1 . HZ36-3 (500 mW) Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden Version 2012-11-19 Maximum power dissipation Maximale Verlustleistung 3.9 62.5 Nominal Z-voltage Nominale Z-Spannung 1.6.38 V Glass case Glasgehäuse
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HZ36-3
DO-35
OD-27)
HZ16-1
HZ16-2
HZ16-3
HZ18-1
HZ18-2
HZ18-3
HZ2A1
HZ15-1
HZ6C
HZ-12B1
HZ4B3
HZ11A3
HZ27-3
hz9a2
HZ20-3
HZ4C
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Untitled
Abstract: No abstract text available
Text: 1N5221B~1N5266B SILICON ZENER DIODES 2.4 to 68 Volts VOLTAGE POWER 500 mWatts FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA
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1N5221B
1N5266B
500mW
2011/65/EU
DO-35
MIL-STD-750,
DO-35
2013-REV
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zener 3a6
Abstract: No abstract text available
Text: MM3Z2V4 . MM3Z100 Zener-Diodes Surface mount Zener Diodes Zener-Dioden für die Oberflächenmontage Version 2004-06-22 Power dissipation – Verlustleistung 200 mW 1.7 Type Code 1.25 0.3 1 Nominal Zener voltage Nominale Zener-Spannung 2.5±0.2 Dimensions / Maße in mm
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MM3Z100
OD-323
zener 3a6
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zener diode si 18
Abstract: DO-213AB do213ab
Text: ZMY 1 G … ZMY 100 G 1.0 W Planare Si-Zener-Dioden für die Oberflächenmontage Surface mount Silicon-Zener Diodes (planar technology) Version 2004-05-13 1.0 W 0.4 0.4 Nominal Z-voltage – Nominale Z-Spannung Type Typ 5.0 2.5 Maximum power dissipation
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DO-213AB
zener diode si 18
DO-213AB
do213ab
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zener diode si 18
Abstract: DO-213AB
Text: ZMY 1…ZMY 200 1.3 W Surface mount Silicon-Zener Diodes (non-planar technology) Flächendiffundierte Si-Zener-Dioden für die Oberflächenmontage Version 2004-05-13 1.3 W 0.5 0.5 Nominal Z-voltage – Nominale Z-Spannung Type Typ 5.0 2.5 Maximum power dissipation
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DO-213AB
UL94V-0
zener diode si 18
DO-213AB
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TRANSISTOR 132-gd
Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n
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06o3H
TRANSISTOR 132-gd
TRANSISTORS 132 GD
equivalent io transistor 131-G
bbc ds diodes DS 1,8
transistor vergleichsliste
aeg diode Si 61 L
AF124
Transistor Vergleichsliste DDR
OC1044
bbc ds diodes
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KZZ71
Abstract: KZZ74 KZZ72 KZZ76 KZ715 KZ707 KZZ73 KZZ75 KZ755 KZ753
Text: TESLA ELEKTRONICKE 3SE D • flTSDSMM DD0D13b Tflb ■ T ^ lf- ü l TELC SILIC O N ZEN ER DIO D ES 0.28 AND 0.4 W SILIZIUM -ZENERDIODEN 0,28 UND 0.4 W Maximum ratings • Grenzdaten lz Pd R th jc Uz r2 mA W K/W V KZ721 36 0,28 * 0,012 KZ722 30 0,28 1) 0,012
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DD0D13b
KZ721
KZ722
KZ723
KZ724
KZZ71
KZZ72
KZZ73
KZ714
KZ715
KZZ74
KZZ76
KZ707
KZZ75
KZ755
KZ753
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keramische Werke Hermsdorf
Abstract: Mischstufen VEB Keramische Werke OA741 OA645 OA625 hermsdorf OA665 neue halbleiterbauelemente Amateur
Text: HalbleiterBauelemente Dioden Germanium dioden Type Durchlaß spannung U a k IVI Durchlaß strom Sperr spannung lA K l m A l U k a |V| Sperrstrom IKA li'AI max. zuläss. Sperr spannung jEä max. zuass. Durchlaß strom UKAma* IVI ^AKmax !mAl Bau
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transistores
Abstract: te 1317 diodo zener
Text: S e m ic o n d u c t o r * CONTENTS | ENGLISH FRENCH Introduction. 1 Introduction. 1 Product Packages. 2 Gamme des
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varactor 36z
Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r
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Z1000
MZ4614
MZ4627
1N4099
M4L3052
M4L3056
1N5158
varactor 36z
germanium
halbleiter index transistor
Halbleiter Buch
2n5347
2n3054
working of reactance modulator
JE2955
germanium transistor
2N3902
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SIEMENS thyristor
Abstract: OPTOCOUPLER thyristor din 41 siemens OF IC 741 DIN 41 782 mos Turn-off Thyristor diode din
Text: Symbole, Begriffe, Normen Symbole und Begriffe der w ichtigsten Größen Symbole Begriffe C C,o Kapazität Optokoppler-Kapazität Eingang/Ausgang Eingangskapazität Ausgangskapazität Rückwirkkapazität Kapazität (Sensor/Source) Tastverhältnis/Tastgrad (D = i0/r )
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147-OC,
147-2G,
SIEMENS thyristor
OPTOCOUPLER thyristor
din 41
siemens OF IC 741
DIN 41 782
mos Turn-off Thyristor
diode din
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